SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the onstate by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings A VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds 30/10/2012 B C D E Unit M S N 100 200 300 400 500 600 700 800 V 8 A 70 A 8 A ±1 A 2.2 W 0.9 W -40 to +110 -40 to +125 °C °C 230 °C COMSET SEMICONDUCTORS 1|4 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S THERMAL CHARACTERISTICS Symbol Ratings Value R∂JC Junction to case thermal resistance ≤ 1.8 R∂JA Junction to free air thermal resistance ≤ 62.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current IGT Gate trigger current VGT Gate trigger voltage Holding current IH Latching current IL VTM dv/dt dv/dt© Peak on-state voltage Critical rate of rise of off-state voltage Critical rise of communication voltage Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, IG = 0 initiating ITM = 100 mA Min Typ Max Unit - - ±2 mA - 2 -12 -9 20 0.7 -0.8 -0.8 0.9 50 -50 -50 2 -2 -2 2 - 5 30 V mA Vsupply = -12 V†, IG = 0 initiating ITM = -100 mA Vsupply = +12 V† (seeNote7) Vsupply = -12 V† (seeNote7) - -9 -30 - - 50 -50 mA ITM = ± 12 A, IG = 50 mA (see Note6) - ±1.6 ±2.1 V VDRM = Rated VDRM, IG = 0 TC = 110°C - ±100 - VDRM = Rated VDRM, ITRM = ± 12A TC = 85°C V/µs ±5 - - † All voltages are whit respect to Main Terminal 1. 30/10/2012 mA COMSET SEMICONDUCTORS 2|4 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. 6. This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz. MECHANICAL DATA CASE TO-220 30/10/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S PINNING Pin 1 : Pin 2 : Pin 3 : kathode Anode Gate Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 30/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4