SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings A VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL B C D E Unit M S N Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Full-cycle RMS on-state current at (or 8 below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave 70 (see Note3) Peak on-state surge current half-sine-wave 8 (see Note4) Peak gate current ±1 Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 2.2 µs) Average gate power dissipation at (or 0.9 below) 85°C case (see Note5) Operating case temperature range -40 to +110 Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 230 seconds Page 1 of 3 V A A A A W W °C °C °C SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. This value applies for a maximum averaging time of 20 ms. THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value Unit ≤ 1.8 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak offstate current IGT Gate trigger current VGT Gate trigger voltage IH Holding current Test Condition(s) VD = Rated VDRM, , IG = 0, TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs - ±2 - 2 -12 -9 20 0.7 -0.8 -0.8 0.9 50 -50 -50 2 -2 -2 2 Vsupply = +12 V†, IG = 0, initiating ITM = 100 mA - 5 30 Vsupply = -12 V†, IG = 0, initiating ITM = -100 mA - -9 -30 - ±1.6 50 -50 ±2.1 - ±100 Latching current VTM Peak on-state voltage Critical rate of rise of off-state voltage Vsupply = +12 V† (seeNote7) Vsupply = -12 V† (seeNote7) ITM = ± 12 A, IG = 50 mA (see Note6) VDRM = Rated VDRM, IG = 0 TC = 110°C Critical rise of communication voltage VDRM = Rated VDRM, ITRM = ± 12A TC = 85°C dv/dt© Mx Unit - IL dv/dt Min Typ † All voltages are whit respect to Main Terminal 1. Page 2 of 3 mA mA V mA mA V V/µs ±5 - - SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Note 6: This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body. Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz. MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Page 3 of 3 Main Terminal 1 Main Terminal 2 Gate