Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・10A rated continuous collector current APPLICATIONS ・For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS TIP160 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP161 Open emitter Emitter-base voltage IC 350 TIP162 380 TIP160 320 TIP161 UNIT 320 Open base TIP162 VEBO VALUE 350 V V 380 Open collector 5 V Collector current-DC 10 A ICM Collector current-Pulse 15 A IB Base current-DC 1 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP160 V(BR)CEO Collector-emitter breakdown voltage TIP161 MIN TYP. MAX UNIT 320 IC=10mA, IB=0 TIP162 V 350 380 VCEsat-1 Collector-emitter saturation voltage IC=6.5A ,IB=0.1A 2.8 V VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=1A 2.9 V Base-emitter saturation voltage IC=6.5A ,IB=0.1A 2.2 V Diode forward voltage IF=10A 3.5 V 1.0 mA 100 mA VBEsat VF ICEO Collector cut-off current TIP160 VCE=320V, IB=0 TIP161 VCE=350V, IB=0 TIP162 VCE=380V, IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=4A ; VCE=2.2V 200 Switching times td Delay time tr Rise time ts Storage time tf Fall time VCC =33 V, IC = 6.5 A, IB1 =-IB2 =100 mA tp=20μs ;Duty Cycle≤2.0% 2 0.3 μs 1.5 μs 2.3 μs 2.8 μs Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3