BUV47, BUV47A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 9 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = -2.5 V) Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous base current SYMBOL BUV47 BUV47A BUV47 BUV47A BUV47 BUV47A VCEX VCER VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V IC 9 A ICM 15 A A IB 3 Peak base current IBM 6 A Continuous device dissipation at (or below) 25°C case temperature Ptot 120 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) V(BR)EBO ICES ICER IEBO VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Base-emitter breakdown voltage TEST CONDITIONS MIN IC = 200 mA L = 25 mH (see Note 2) IE = IC = 0 (see Note 3) 50 mA BUV47 400 BUV47A 450 TYP MAX V 7 30 VCE = 850 V VBE = 0 BUV47 0.15 Collector-emitter VCE = 1000 V VBE = 0 BUV47A 0.15 cut-off current VCE = 850 V VBE = 0 TC = 125°C BUV47 1.5 TC = 125°C VCE = 1000 V VBE = 0 BUV47A 1.5 VCE = 850 V RBE = 10 Ω BUV47 0.4 Collector-emitter VCE = 1000 V RBE = 10 Ω BUV47A 0.4 cut-off current VCE = 850 V RBE = 10 Ω TC = 125°C BUV47 3.0 VCE = 1000 V RBE = 10 Ω TC = 125°C BUV47A 3.0 VEB = 5V IC = 0 Emitter cut-off current 1 Collector-emitter IB = 1A IC = 5A saturation voltage IB = 2.5 A IC = 8A IB = 1A IC = 5A VCE = 10 V IC = 0.5 A VCB = 20 V IC = 0 Base-emitter saturation voltage Current gain bandwidth product Output capacitance 1.5 (see Notes 3 and 4) 3.0 (see Notes 3 and 4) f= 1.6 1 MHz f = 0.1 MHz UNIT V mA mA mA V V 8 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time ts Storage time tf Fall time TEST CONDITIONS † IC = 5 A IB(on) = 1 A VCC = 150 V (see Figures 1 and 2) MIN TYP IB(off) = -1 A 1.0 µs 3.0 µs 0.8 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † tsv Voltage storage time IC = 5 A IB(on) = 1 A tfi Current fall time TC = 100°C (see Figures 3 and 4) MIN VBE(off) = -5 V 2 TYP MAX UNIT 4.0 µs 0.4 µs AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = t off 90% D dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUV47, BUV47A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV47, BUV47A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP762AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 TCP762AB 5·0 TC = 25°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 4·0 3·0 2·0 1·0 0 1·0 10 0 0·5 1·0 IC - Collector Current - A TC = 100°C IC = 8 A IC = 6 A IC = 4 A IC = 2 A 0·4 0·3 0·2 0·1 0 1·5 2·0 IB - Base Current - A Figure 7. 2·5 TCP762AC 10 ICES - Collector Cut-off Current - µA VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP762AK 0·5 1·0 2·5 Figure 6. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 0·5 2·0 IB - Base Current - A Figure 5. 0 1·5 1·0 BUV47A VCE = 1000 V 0·1 BUV47 VCE = 850 V 0·01 0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 BUV47, BUV47A NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP762AA 10 1·0 0.1 tp = 100 µs 1 ms tp = tp = 10 ms DC Operation 0·01 1·0 BUV47 BUV47A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. ZθJC / RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP762AD 1·0 50% 20% 0·1 10% 5% 2% 1% 0·01 0% 0·001 10-5 t1 duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 10-4 10-3 t2 ( ) ZθJC RθJC 10-2 · R θJC(max) 10-1 t1 - Power Pulse Duration -s Figure 10. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV47, BUV47A NPN SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 7