Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit: mm ● ● ● φ3.2±0.1 2.0±0.2 Solder Dip ● Incorporating a built-in damper diode Reduction of a parts count and simplification of a circuit are allowed High breakdown voltage with high reliability High-speed switching Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw Symbol Ratings Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 20 A Collector current IC 5 A Base current IB 4 A dissipation Ta=25°C 100 PC Junction temperature Tj Storage temperature Tstg 3 ■ Electrical Characteristics 0.6±0.2 5.45±0.3 10.9±0.5 2 3 (TC=25˚C) Parameter Collector power TC=25°C 2.0±0.1 1.1±0.1 1 ■ Absolute Maximum Ratings 5.0±0.2 3.2 21.0±0.5 15.0±0.2 ● 16.2±0.5 3.2 2.3 ● 15.0±0.3 11.0±0.2 0.7 ■ Features 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(b) Internal Connection C B E W 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit VCB = 1000V, IE = 0 30 µA VCB = 1500V, IE = 0 300 µA Collector cutoff current ICBO Emitter to base voltage VEBO IE = 500mA, IC = 0 7 Forward current transfer ratio hFE VCE = 10V, IC = 5A 4.5 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 1.2A 8 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 1.2A 1.5 V Transition frequency fT VCE = 10V, IC = 1A, f = 0.5MHz Storage time (L-load) tstg IC = 5A, IB1 = 1.2A, IB2 = –1.2A, Fall time (L-load) tf Diode forward voltage VF V 15 2 MHz 12 µs Lleak = 5µH 0.8 µs IC = –6A, IB = 0 –2.3 V 1 Power Transistors 2SD2057 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 100 80 60 40 Collector to emitter saturation voltage VCE(sat) (V) 10 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) 120 IB=1.6A 8 1.4A 1.2A 1A 0.8A 6 0.6A 0.4A 4 0.2A 2 20 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 hFE — IC VCE=10V –25˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 300 100 30 10 TC=100˚C 3 25˚C –25˚C 1 0.3 Collector current IC (A) 0.1 0.3 1 3 Area of safe operation, horizontal operation ASO TC=–25˚C 100˚C 0.03 0.01 0.1 0.3 1 3 10 30 ICP 10 IC t=1ms 50ms 3 DC 10ms 1 0.3 0.1 0.03 1 3 10 30 100 300 Rth(t) — t Thermal resistance Rth(t) (˚C/W) f=15.75kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation ICP Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 16 12 8 4 100 (1) 10 (2) 1 <1mA 0 0 400 800 1200 1600 Collector to emitter voltage VCE 2 2000 (V) 0.1 10–4 10–3 10–2 10–1 1000 Collector to emitter voltage VCE (V) 10000 20 Collector current IC (A) 10 Collector current IC (A) 24 25˚C 0.1 0.01 Non repetitive pulse TC=25˚C 0.1 0.01 0.03 10 Collector current IC (A) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=100˚C 0.3 Area of safe operation (ASO) IC/IB=2 1 1 Collector current IC (A) 1000 25˚C IC/IB=2 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 3 1 Time t (s) 10 102 103 104