Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 ■ Absolute Maximum Ratings TC = 25°C (23.4) (4.5) (1.2) 5° 5° 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30 A Collector current IC 22 A Base current IB 11 A PC 70 W 10.9±0.5 5° 1 2 5.5±0.3 Unit Ta = 25°C 5° (4.0) 2.0±0.2 3 1: Base 2: Collector 3: Emitter TOP-3E Package (2.0) Rating TC = 25°C 3.0±0.3 5° 5.45±0.3 Symbol 3.3±0.3 Parameter (2.0) • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO) 26.5±0.5 (10.0) 5° 18.6±0.5 (2.0) Solder Dip ■ Features Collector power dissipation φ 3.2±0.1 22.0±0.5 For horizontal deflection output Marking Symbol: C5553 Internal Connection C 3.5 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO Conditions Max Unit 50 µA VCB = 1 700 V, IE = 0 1 mA VEB = 7 V, IC = 0 50 µA hFE VCE = 5 V, IC = 11 A Collector to emitter saturation voltage VCE(sat) IC = 11 A, IB = 2.75 A Base to emitter saturation voltage VBE(sat) IC = 11 A, IB = 2.75 A Forward current transfer ratio Min Typ VCB = 1 000 V, IE = 0 6 12 3 1.5 V V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 11 A, Resistance loaded 3.0 µs Fall time tf IB1 = 2.75 A, IB2 = −5.5 A 0.2 µs 3 MHz 1 2SC5553 Power Transistors PC Ta 80 70 (1) 60 50 40 30 20 IC 10 DC 3 t = 1 ms t = 100 µs t = 10 ms 1 0.3 0.1 0.03 f = 64 kHz, TC < 90°C Area of safe operation for the single pulse load curve due to discharge in the highvoltage rectifier tube during horizontal operation 30 25 20 15 10 0.01 5 (2) 10 0.003 (3) 0 25 50 75 100 125 150 175 Ambient temperature Ta (°C) 2 30 35 Non repetitive pulse TC = 25°C ICP Collector current IC (A) 90 0 100 (1) TC = Ta (2) With a 100 × 100 × 2 mm3 Al heat sink (3) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 100 Area of safe operation, horizontal operation ASO p operation (ASO) Area of safe 0.001 0 1 2 5 10 20 50 100 200 500 Collector to emitter voltage VCE (V) < 1 mA 0 500 1 000 1 500 2 000 Collector to emitter voltage VCE (V)