Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm ■ Absolute Maximum Ratings Parameter Collector to base voltage 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 4.2±0.2 5.5±0.2 φ3.1±0.1 (TC=25˚C) Symbol Ratings 2SD1274 Unit 150 VCBO 2SD1274A 10.0±0.2 200 2SD1274B 250 2SD1274 150 V 4.0 ● 14.0±0.5 ● High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.7±0.1 ■ Features 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Collector to emitter voltage VCES 2SD1274A 200 VCEO 80 V Emitter to base voltage VEBO 6 V Collector current IC 5 A Collector power TC=25°C 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SD1274 2SD1274A 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Parameter current 2 W 2 ■ Electrical Characteristics Collector cutoff 1 250 2SD1274B Collector to emitter voltage dissipation 5.08±0.5 V ICBO 2SD1274B Conditions min typ max VCB = 150V, IE = 0 1 VCB = 200V, IE = 0 1 VCB = 250V, IE = 0 1 Unit mA Collector to emitter voltage VCEO(sus)* IC = 0.2A, L = 25mH 80 V Emitter to base voltage VEBO IE = 1mA, IC = 0 6 V Forward current transfer ratio hFE VCE = 4V, IC = 5A 14 Base to emitter voltage VBE VCE = 4V, IC = 5A Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 1A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Fall time tf IC = 5A, IB1 = 0.8A, VEB = –5V *V CEO(sus) Test circuit X L 25mH 60Hz 120Ω 6V Y 1Ω 1.5 1.6 V MHz 1 µs IC(A) 0.2 0.1 15V G 40 V 80 VCE(V) 1 Power Transistors 2SD1274, 2SD1274A, 2SD1274B PC — Ta IC — VCE (1) 40 30 20 (2) 10 8 TC=25˚C 5 35mA 4 30mA 25mA 3 20mA 15mA 2 10mA (3) (4) 5mA 6 TC=100˚C 5 –25˚C 4 3 2 1 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 3000 TC=100˚C 25˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 1000 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 Collector current IC (A) 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 Collector current IC (A) Cob — VCB Area of safe operation (ASO) Collector current IC (A) 1000 300 100 30 10 Non repetitive pulse TC=25˚C 30 10 ICP t=1ms IC 3 0.3 1 3 10 Area of safe operation, horizontal operation ASO 20 DC 1 0.3 0.1 f=15.75kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation 18 Collector current IC (A) IE=0 f=1MHz TC=25˚C 0.1 Collector current IC (A) 100 10000 3000 300 3 1 0.01 0.03 10 2.0 VCE=10V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) 1 1.6 fT — IC 1000 3 1.2 VCE=4V Forward current transfer ratio hFE 10 0.8 10000 IC/IB=10 30 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 10000 100 0.3 0 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 25˚C 40mA 1 0 Collector output capacitance Cob (pF) VCE=4V 7 IB=45mA Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 16 14 12 10 8 6 4 3 0.03 1 0.01 2 <1mA 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2 IC — VBE 6 Collector current IC (A) Collector power dissipation PC (W) 50 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 0 80 160 240 320 Collector to emitter voltage VCE (V) Power Transistors 2SD1274, 2SD1274A, 2SD1274B Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3