Datasheet

Power Module
600V 150A IGBT Module
MG06150S-BN4MM
RoHS ®
Features
• H
igh short circuit
capability, self limiting
short circuit current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• V
CE(sat) with positive
temperature coefficient
• Low switching losses
• F
ast switching and short
tail current
Applications
Agency Approvals
AGENCY
• H
igh frequency
switching application
AGENCY FILE NUMBER
E71639
• Motion/servo control
• UPS systems
• Medical applications
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
TJ max
Max. Junction Temperature
TJ op
Test Conditions
Operating Temperature
Tstg
Storage Temperature
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Min
Typ
-40
-40
AC, t=1min
Max
Unit
175
°C
150
°C
125
°C
3000
V
350
Torque
Module-to-Sink
Recommended (M6)
3
5
N·m
Torque
Module Electrodes
Recommended (M5)
2.5
5
N·m
Weight
160
g
Values
Unit
600
V
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
VCES
Collector - Emitter Voltage
TJ=25°C
VGES
Gate - Emitter Voltage
IGBT
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
±20
V
225
A
TC=60°C
150
A
tp=1ms
300
A
500
W
TC=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TJ=25°C
600
V
TC=25°C
225
A
TC=60°C
150
A
tp=1ms
300
A
TJ =125°C, t=10ms, VR=0V
2000
A 2s
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG06150S-BN4MM
1
128
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 150A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=2.4mA
4.9
Collector - Emitter
Saturation Voltage
IC=150A, VGE=15V, TJ=25°C
1.45
5.8
6.5
V
IC=150A, VGE=15V, TJ=125°C
1.6
IGBT
VGE(th)
VCE(sat)
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=600V, VGE=0V, TJ=25°C
VCE=600V, VGE=0V, TJ=125°C
VCE=0V,VGE=±15V, TJ=125°C
VCC=300V, IC=150A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCC=300V
IC=150A
RG =3.3Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
VGE=±15V
Inductive Load
Turn - off Energy
Short Circuit Current
ISC
-400
V
1
mA
5
mA
400
nA
2
Ω
1.6
μC
9.3
nF
0.29
nF
TJ =25°C
150
ns
TJ =125°C
160
ns
TJ =25°C
30
ns
TJ =125°C
40
ns
TJ =25°C
340
ns
TJ =125°C
370
ns
TJ =25°C
60
ns
TJ =125°C
70
ns
TJ =25°C
0.85
mJ
TJ =125°C
1.35
mJ
TJ =25°C
4.1
mJ
TJ =125°C
5.3
mJ
tpsc≤6μS , VGE=15V; TJ=125°C,VCC=360V
750
Junction-to-Case Thermal Resistance (Per IGBT)
RthJC
V
A
0.3
K/W
Diode
VF
Forward Voltage
IF=150A , VGE=0V, TJ =25°C
1.55
IF=150A , VGE=0V, TJ =125°C
1.5
V
IF=150A , VR=300V
diF/dt=-5400A/μs
TJ =125°C
180
A
IRRM
Max. Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
RthJCD
Junction-to-Case Thermal Resistance (Per Diode)
MG06150S-BN4MM
V
13
μC
3.5
mJ
0.5
2
129
K/W
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 150A IGBT Module
Figure 1: Typical Output Characteristics
Figure 2: Typical Output characteristics
300
300
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
240
180
TJ =25°C
IC (A)
IC (A)
240
120
180
TJ =125°C
120
TJ =125°C
60
60
0
0
0.8
0.4
1.2 1.6
VCE˄V˅
2.0
0
2.4
Figure 3: Typical Transfer characteristics
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
300
15
VCC=300V
IC=150A
VGE=±15V
TJ =125°C
VCE =20V
12
240
180
120
Eon Eoff (mJ)
IC (A)
TJ =25°C
TJ =125°C
60
0
5
6
7
9
8
VGE˄V˅
10
6
18
12
RG˄Ω˅
24
30
375
VCC=300V
RG=3.3Ω
VGE=±15V
Tj =125°C
300
225
Eoff
4
150
RG=3.3Ω
VGE=±15V
Tj =125°C
Eon
2
MG06150S-BN4MM
0
Figure 6: R
everse Biased Safe Operating Area
6
0
0
Eoff
0
11
IC (A)
Eon Eoff (mJ)
8
6
3
Figure 5: Switching Energy vs. Collector Current
10
Eon
9
75
Eon
60
120
180
IC˄A˅
240
0
300
3
130
0
100
200
300 400
VCE˄V˅
500 600
700
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 150A IGBT Module
Figure 7: Diode Forward Characteristics
Figure 8: S
witching Energy vs. Gate Resistor
300
5
240
4
120
Erec (mJ)
IF (A)
180
TJ =125°C
60
0
IF=150A
VCE=300V
Tj =125°C
2
TJ =25°C
0
0.4
0.8
1.2
VF˄V˅
3
1
2.0
1.6
0
0
6
12
18
24
30
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
6
5
Figure 10: Transient Thermal Impedance
1
RG=3.3Ω
VCE=300V
Tj =125°C
Diode
ZthJC (K/W)
Erec (mJ)
4
3
2
0.1
IGBT
0.01
1
0
0
MG06150S-BN4MM
60
120
180
IF (A)
240
0.001
0.001
300
4
131
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15
Power Module
600V 150A IGBT Module
Dimensions-Package S
Circuit Diagram
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG06150S-BN4MM
MG06150S-BN4MM
160g
Bulk Pack
100
Part Marking System
Part Numbering System
MG06150 S - BN4 MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
MG06150S-BN4MM
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
06: 600V
CIRCUIT TYPE
2x(IGBT+FWD)
CURRENT RATING
PACKAGE TYPE
LOT NUMBER
Space
reserved
for QR
code
150: 150A
MG06150S-BN4MM
5
132
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15