LITTELFUSE MG06400D

Power Module
600V IGBT Family
MG06400D-BN4MM Series 400A Dual IGBT
RoHS
Features
igh short circuit
• H
capability,self limiting
short circuit current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• V
CE(sat) with positive
temperature coefficient
• Low switching losses
• F
ast switching and short
tail current
Applications
Agency Approvals
AGENCY
AGENCY FILE NUMBER
• Motor drives
• SMPS and UPS
• Inverter
• Welder
• Converter
• Induction Heating
E71639
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TVj max)
TVj op
Operating Temperature
-40
Tstg
Storage Temperature
Visol
Insulation Test Voltage
AC, t=1min
Comparative Tracking Index
Module case exposed to 0.1% ammonium
chloride solution per UL and IEC standards
350
Torque
Module-to-Sink
Recommended (M6)
3
Torque
Module Electrodes
Recommended (M6)
2.5
CTI
-40
Weight
Max
Unit
175
°C
150
°C
125
°C
3000
V
V
5
N·m
5
N·m
320
g
Values
Unit
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
VCES
Collector - Emitter Voltage
TVj=25°C
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
IGBT
600
V
±20
V
TC=25°C
500
A
TC=70°C
400
A
tp=1ms
800
A
1250
W
TVj=25°C
600
V
TC=25°C
500
A
TC=70°C
400
A
tp=1ms
800
A
TVj =125°C, t=10ms, VR=0V
10000
A2s
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG06400D-BN4MM
1
Revised: July 26, 2013 04:44 PM
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Power Module
600V IGBT Family
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
4.9
Typ
Max
Unit
5.8
6.5
V
IGBT
VGE(th)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6.4mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=400A, VGE=15V, TVj=25°C
1.45
IC=400A, VGE=15V, TVj=125°C
1.6
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Intergrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
VCE=600V, VGE=0V, TVj=25°C
VCE=600V, VGE=0V, TVj=125°C
VCE=0V,VGE=±15V, TVj=125°C
VCE=300V, IC=400A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
VCC=300V
IC=400A
RG =1.5Ω
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
VGE=±15V
Inductive Load
-400
V
1.0
mA
5
mA
400
μA
1.0
Ω
4.3
μC
26
nF
0.76
nF
TVj =25°C
110
ns
TVj =125°C
120
ns
TVj =25°C
50
ns
TVj =125°C
60
ns
TVj =25°C
490
ns
TVj =125°C
520
ns
TVj =25°C
60
ns
TVj =125°C
70
ns
TVj =25°C
2.1
mJ
TVj =125°C
3.2
mJ
TVj =25°C
12
mJ
TVj =125°C
15
mJ
2000
A
tpsc≤6μS , VGE=15V
TVj=125°C,VCC=360V
Junction-to-Case Thermal
Resistance (Per IGBT)
RthJC
V
0.12
K/W
Diode
Forward Voltage
VF
IF=400A , VGE=0V, TVj =25°C
1.55
IF=400A , VGE=0V, TVj =125°C
1.50
V
V
A
IRRM
Max. Reverse Recovery Current
IF=400A , VR=300V
330
Qrr
Reverse Recovery Charge
diF/dt=-7000A/μs
29.0
μC
Erec
Reverse Recovery Energy
TVj=125°C
7.4
mJ
RthJCD
Junction-to-Case Thermal
Resistance (Per Diode)
MG06400D-BN4MM
0.22
2
Revised: July 26, 2013 04:44 PM
K/W
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Power Module
600V IGBT Family
Figure 1: Typical Output Characteristics
Figure 2: Typical Output Characteristics
800
800
VGE =15V
640
480
TVj=25°C
IC (A)
IC (A)
640
320
480
TVj =125°C
320
TVj=125°C
160
160
0
0
0.4
0.8
1.2
1.6
VCE˄V˅
2.0
0
2.4
Figure 3: T
ypical Transfer characteristics
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
800
60
VCE =20V
VCC=300V
IC=400A
VGE=±15V
TVj =125°C
50
640
480
Eon Eoff (mJ)
IC (A)
TVj =25°C
320
TVj =125°C
160
0
Eon
30
20
Eoff
10
5
6
7
9
8
VGE˄V˅
10
0
11
Figure 5: Switching Energy vs. Collector Current
40
32
6
10
RG˄Ω˅
14
18
800
600
Eoff
16
Eon
8
MG06400D-BN4MM
2
1000
VCC=300V
RG=1.5Ω
VGE=±15V
TVj =125°C
24
0
0
0
Figure 6: Reverse Biased Safe Operating Area
IC (A)
Eon Eoff (mJ)
40
200
400
IC˄A˅
600
400
RG=1.5Ω
VGE=±15V
TVj =125°C
200
0
800
3
Revised: July 26, 2013 04:44 PM
0
100
200
300 400
VCE˄V˅
500
600
700
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Power Module
600V IGBT Family
Figure 7: Diode Forward Characteristics
800
12
640
10
Erec (mJ)
TVj =125°C
480
IF (A)
Figure 8: Switching Energy vs. Gate Resistort
320
IF=400A
VCE=300V
TVj =125°C
8
6
4
160
0
TVj =25°C
0
0.8
1.2
VF˄V˅
0.4
1.6
2
0
2.0
4
6
8
10
12
Figure 10: T
ransient Thermal Impedance
12
1
RG=1.5Ω
VCE=300V
TVj =125°C
Diode
ZthJC (K/W)
8
Erec (mJ)
2
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
10
0
6
0.1
IGBT
0.01
4
2
0
0
MG06400D-BN4MM
200
400
600
0.001
0.001
800
4
Revised: July 26, 2013 04:44 PM
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Power Module
600V IGBT Family
Dimensions-Package D
Circuit Diagram and Pin Assignment
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG06400D-BN4MM
MG06400D-BN4MM
320g
Bulk Pack
30
Part Marking System
Part Numbering System
MG06400D-BN4MM
PRODUCT TYPE
M: Power Module
ASSEMBLY SITE
MODULE TYPE
G: IGBT
VOLTAGE RATING
06: 600V
WAFER TYPE
CURRENT RATING
PACKAGE TYPE
400: 400A
MG06400D-BN4MM
CIRCUIT TYPE
B: 2x(IGBT+FWD)
D: Package D
5
Revised: July 26, 2013 04:44 PM
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.