Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Parameter Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 10V, IC = 1mA 70 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.6 pF Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 60 Ω Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz *h FE 150 V 250 250 MHz Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 1 2SC3313 Transistor PC — Ta IC — VCE 60 300 200 100 50 16 IB=100µA 12 80µA 60µA 8 40µA 4 40 25˚C Ta=75˚C –25˚C 30 20 10 20µA 0 60 80 100 120 140 160 0 0 2 4 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 10 30 Ta=75˚C 25˚C 150 –25˚C 100 50 0.3 1 Cob — VCB 3 10 30 1 0 10 30 100 Collector to base voltage VCB (V) Reverse transfer impedance Zrb (Ω) 2 VCB=10V 300 6V 200 100 80 60 40 VCB=6V 10V 20 1 –3 –10 –30 –100 Cre — VCE 100 0.3 –1 Emitter current IE (mA) f=2MHz Ta=25˚C 0 0.1 2.0 400 Zrb — IE 3 1.6 500 0 – 0.1 – 0.3 100 120 4 1.2 Ta=25˚C Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.8 600 200 0 0.1 100 5 3 0.4 Base to emitter voltage VBE (V) fT — I E 250 Collector current IC (mA) 1 0 VCE=10V Forward current transfer ratio hFE 30 1 12 300 IC/IB=10 0.3 10 hFE — IC 100 0.01 0.1 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 6 Transition frequency fT (MHz) 40 3 Emitter current IE (mA) 10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 20 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 f=10.7MHz Ta=25˚C 2.0 IC=1mA, 3mA 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V)