Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7±0.2 ● 8.0±0.2 ■ Features ■ Absolute Maximum Ratings 13.5±0.5 0.7±0.1 (Ta=25˚C) +0.15 Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V 1 2 3 Peak collector current ICP 1 A 2.54±0.15 Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.27 1.27 Parameter Symbol Conditions min VCEO IC = 0.1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1* VCE = 10V, IC = 150mA 130 50 hFE2 VCE = 5V, IC = 500mA Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *h FE1 1:Emitter 2:Collector 3:Base TO–92NL Package (Ta=25˚C) Collector to emitter voltage Forward current transfer ratio +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 Parameter typ max 120 Unit V 5 V 330 1 1.2 200 V V MHz 20 pF Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SD1937 Transistor IC — VCE VCE(sat) — IC 200 1.0 Collector current IC (mA) 0.8 0.6 0.4 0.2 160 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 400 300 Ta=75˚C 25˚C 200 –25˚C 100 1 3 10 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 Single pulse Ta=25˚C 3 ICP 1 t=10ms IC 0.3 t=1s 0.1 0.03 0.01 0.003 0.001 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) VCB=10V Ta=25˚C 350 300 250 200 150 100 1 3 10 30 100 300 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) Collector current IC (A) Collector output capacitance Cob (pF) 0.3 Collector current IC (A) 0 2 0.1 10 10 1 50 Cob — VCB 3 3 fT — I E 500 0 0.01 0.03 10 80 1 10 400 Collector current IC (A) 70 12 30 IC/IB=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 10 600 IC/IB=10 0.01 0.01 0.03 8 IC/IB=10 hFE — IC 100 1 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 4 Transition frequency fT (MHz) Collector power dissipation PC (W) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 1000 Collector to emitter voltage VCE (V) –100