TISP4xx0T3BJ

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TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxT3BJ Overvoltage Protector Series
MODEM Protection against:
-TIA/EIA-IS-968 Type A & B surge
-UL 60950, Clause 6. power cross
-CSA 22.2 No. 60950, Clause 6. power cross
SMB Package (Top View)
R 1
Low Differential Capacitance ................................... 23 pF typ.
2 T
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
VDRM
V(BO)
V
V
’4290T3
220
290
’4350T3
’4400T3
275
335
350
400
Device
MDXXCM
Device Symbol
T
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
2/10
GR-1089-CORE
250
SD4XAA
A
8/20
IEC 61000-4-5
250
10/160
TIA/EIA-IS-968
150
10/700
ITU-T K.20/.21/.45
120
9/720
TIA/EIA-IS-968
120
10/560
TIA/EIA-IS-968
100
10/1000
GR-1089-CORE
80
R
.............................................. UL Recognized Component
How to Order
Device
Package
TISP4xxxT3BJ
BJ (SMB/DO-214AA J-Bend)
Carrier
R (Embossed Tape Reeled)
Order As
TISP4xxxT3BJR-S
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
After a TIA/EIA-IS-968 (replaces FCC Part 68) Type A surge the equipment can be faulty, provided that the fault mode causes the equipment to
be unusable. There are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a
TISP4350T3BJ connected between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 applied to
both Ring and Tip will not activate the TISP4350T3BJ, giving an operational pass. The metallic 10/560 is applied between Ring and Tip wires
and will operate the TISP4350T3BJ. As the TISP4350T3BJ has a current rating of 100 A, 10/560 it will survive the FCC Part Type A 100 A,
10/560 metallic surge giving an operational pass.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Description (Continued)
After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both
Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges.
The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350T3BJ will
not clip the B type ringing voltage as it has a high impedance up to 275 V.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
’4290T3
’4350T3
’4400T3
Repetitive peak off-state voltage (see Note 1)
VDRM
Value
Unit
±220
±275
±335
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
±250
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape)
±250
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape)
±150
5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21)
IPPSM
±120
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 voltage wave shape)
±120
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape)
±100
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
±80
A
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
20 ms (50 Hz), full sine wave
ITSM
16.7 ms (60 Hz), full sine wave
25
30
A
2.1
1000 s 50 Hz/60 Hz
Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
Storage temperature range
di T /dt
500
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
See Figure 4
Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4)
IT(OV)M
for current
A rms
versus time
NOTE
4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Recommended Operating Conditions
Component
Min
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 type A surge survival
(T-G or R-G connection)
RS
Typ
Max
Unit
2.5
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 type A surge survival
0
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 type B surge survival
0
Series resistor for GR-1089-CORE first-level surge survival
5
Series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
0
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
6
Ω
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
IDRM Repetitive peak offstate current
VD = VDRM
V(BO)
AC breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
I(BO)
AC breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
VT
On-state voltage
IT = ±5 A, t W = 100 µs
IH
Holding current
IT = ±5 A, di/dt = +/-30 mA/ms
dv/dt
ID
Coff
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Min
Max
Unit
TA = 25 °C
TA = 85 °C
±5
±10
µA
’4290T3
’4350T3
’4400T3
±290
±350
±400
V
±800
A
±3
V
Linear voltage ramp, Maximum ramp value < 0.85 VDRM
Typ
±150
A
±5
kV/µs
TA = 85 °C
VD = ±50 V
±10
f = 1 MHz, Vd = 1 V rms, VD = 0,
f = 1 MHz, Vd = 1 V rms, VD = -1 V
54
48
65
58
f = 1 MHz, Vd = 1 V rms, VD = -2 V
43
52
f = 1 MHz, Vd = 1 V rms, VD = -50 V
20
24
f = 1 MHz, Vd = 1 V rms, VD = -100 V
16
19
Typ
Max
µA
pF
Thermal Characteristics
Parameter
Test Conditions
Min
EIA/JESD51-3 PCB,
115
TA = 25 °C, (see Note 5)
R θJA Junction to free air thermal resistance
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
Unit
°C/W
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
V(BO)
VT
IT
ITSM
I
Quadrant III
Switching
Characteristic
IPPSM
-i
PM4XAG
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxT3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4TAA
TYPICAL CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4TAB
1.0
|Coff(+VD) - C off(-VD) | — Capacitance Asymmetry – pF
1
0.9
TJ = 25 °C
Vd = 1 Vrms
Capacitance Normalized to VD = 0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.5
1
2 3
5
10
20 30
VD - Off-state Voltage - V
50
100150
Figure 2.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
0.9
0.8
0.7
Vd = 10 mV rms, 1 MHz
0.6
0.5
0.4
0.3
0.2
0.1
Vd = 1 V rms, 1 MHz
0.0
1
2
3
4 51 7
0
VD — Off-state Voltage - V
Figure 3.
20
30 40 50
TISP4xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
IT(OV)M — Peak Overload On-State Current – A rms
PEAK OVERLOAD ON-STATE CURRENT
vs
CURRENT DURATION
TI4MAM
40
35
30
25
2
40 A
100 A s
20
DEVICE WILL
CARRY CURRENT
OF TESTS 1 THRU 5
CLAUSE 6.4, UL 60950,
FOR FULL TEST TIME
15
7A
10
9
8
7
6
5
4
3.5
3
2.5
2
0·01
2.2 A
WIRING
SIMULATOR
0·1
1
10
t - Current Duration - s
100
1000
Figure 4. Peak Overload On-state Current against Duration
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
DECEMBER 2001 - REVISED MAY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.