TISP4x00F3

PL
IA
NT
CO
M
*R
oH
S
TISP4600F3, TISP4700F3
HIGH VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4600F3, TISP4700F3
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Device
VDRM
V
V(BO)
V
‘4600
420
600
‘4700
500
700
LM Package (Top View)
T(A)
NC
R(B)
MD4XATA
NC - No internal connection on pin 2
Rated for International Surge Wave Shapes
Wave Shape
Standard
LMF Package (LM Pkg. with Formed Leads) (Top View)
ITSP
T(A)
A
2/10
GR-1089-CORE
8/20
IEC 61000-4-5
10/160
FCC Part 68
10/700
FCC Part 68
ITU-T K.20/21
10/560
FCC Part 68
10/1000
GR-1089-CORE
1
2
3
E
T
E
L
O
S
B
O
NC
190
R(B)
175
110
1
2
3
MD4XAKC
NC - No internal connection on pin 2
70
Device Symbol
50
T
45
.......................................UL Recognized Component
Description
These devices are designed to limit overvoltages between a system
SD4XAA
R
and the protective ground. The TISP4700F3 is designed for insulation
protection of systems such as LANs, and allows a float voltage of
Terminals T and R correspond to the
500 V without clipping. IEC 60950 and UL 1950 have certain requirealternative line designators of A and B
ments for incoming lines of telephone network voltage (TNV). Any protector from the line to ground must have a voltage rating of 1.6 times the equipment rated voltage. International and European equipment usually have maximum rated voltages of 230 V rms, 240 V rms or 250 V rms. Multiplying the 250 V value by 1.6 gives a protector
VDRM value of 400 V. Allowing for operation down to 0 °C gives a VDRM value of 420 V at 25 °C. This need is met by the TISP4600F3.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent
d.c. latchup as the diverted current subsides. A single device provides 2-point protection. Combinations of devices can be used for
multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The TISP4x00F3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This protection
device is in a DO-92 (LM) cylindrical plastic package.
How To Order
Device
TISP4x00F3
Package
Carrier
Order As
LM, Straight Lead DO-92
Bulk Pack
TISP4x00F3
LM, Straight Lead DO-92
Tape And Reel
TISP4x00F3LMR-S
TISP4x00F3
LMF, Formed Lead DO-92
Tape And Reel
TISP4x00F3LMFR-S
Insert x = 6 for TISP4600F3 and x= 7 for TISP4700F3
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4x00F3LM-S
TISP4600F3, TISP4700F3
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
TISP4600F3
TISP4700F3
Repetitive peak off-state voltage
Value
Unit
± 420
± 500
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
190
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
100
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
175
10/160 (FCC Part 68, 10/160 voltage wave shape)
110
IPPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
70
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
70
E
T
E
L
O
S
B
O
10/560 (FCC Part 68, 10/560 voltage wave shape)
50
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
45
Non-repetitive peak on-state current (see Notes 1 and 2)
50/60 Hz,
1s
Storage temperature range
6
A
di T/dt
250
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
ITSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
A
95
NOTES: 1. Initially, the TISP must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarirty. The surge may be repeated after the TISP returns to its
initial conditions.
Recommended Operating Conditions
Component
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K.20 and K.21
R1, R2
Series resistor for FCC Part 68 9/720 survival
Series resistor for FCC Part 68 10/160, 10/560 survival
Min
15
0
0
10
Typ
Min
Typ
Max
Unit
Ω
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak offstate current
Test Conditions
VD = ±V DRM
V(BO) Breakover voltage
dv/dt = ±700 V/ms, R SOURCE = 300 Ω
I(BO)
dv/dt = ±700 V/ms, R SOURCE = 300 Ω
IT = ±5 A, di/dt = +/-30 mA/ms
IH
dv/dt
ID
Coff
Breakover current
Holding current
Critical rate of rise of
off-state voltage
TISP4600F3
TISP4700F3
VD = ±50 V
Off-state capacitance
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -50 V
Unit
±5
µA
±600
±700
V
A
±0.1
Linear voltage ramp, Maximum ramp value < 0.85V DRM
Off-state current
Max
±0.15
A
±5
kV/µs
44
11
±10
µA
74
20
pF
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4600F3, TISP4700F3
Thermal Characteristics
Parameter
RθJA
NOTE
Test Conditions
Min
Typ
Max
EIA/JESD51-3 PCB, IT = ITSM(1000) ,
TA = 25 °C, (see Note 3)
Junction to free air thermal resistance
Unit
120
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
57
3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
E
T
E
L
O
S
B
O
ITSM
IH
V(BO)
I(BO)
IDRM
VD
VDRM
-v
ID
ID
VD
VDRM
+v
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
I
Switching
Characteristic
ITSP
-i
Figure 1. Voltage-Current Characteristic for R-T Terminal Pair
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PMXXAJ A
TISP4600F3, TISP4700F3
Typical Characteristics
OFF-STATE CURRENT
vs
1.10
TC3LAF
Normalized Breakover Voltage
JUNCTION TEMPERATURE
100
ID - Off-State Current - µA
10
1
V D = 50 V
0·1
1.05
E
T
E
L
O
S
B
O
VD = -50 V
0·01
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC3MAIA
1.00
0.95
-25
0·001
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 3.
Figure 2.
HOLDING CURRENT
vs
JUNCTION TEMPERATURE
0.5
TC3LAHA
0.4
I H - Holding Current - A
-25
0.3
0.2
0.1
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - °C
Figure 4.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4600F3, TISP4700F3
Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI4FA B
ITSM(t) - Non-Repetitive Peak On-State Current - A
15
VGEN = 1500 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
10
9
8
7
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
6
5
E
T
E
L
O
S
B
O
4
3
2
1.5
0·1
1
10
t - Current Duration - s
Figure 5.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
100
1000
TISP4600F3, TISP4700F3
APPLICATIONS INFORMATION
IEC 60950, EN 60950, UL 1950 and CSA 22.2 No.950
The ‘950 family of standards have certain requirements for equipment (EUT) with incoming lines of telecommunication network voltage
(TNV). Any protector from a TNV conductor to protective ground must have a voltage rating of at least 1.6 times the equipment rated
supply voltage (Figure 6). The intent is to prevent the possibility of the a.c. mains supply voltage from feeding into the telecommunication
network and creating a safety hazard. International and European equipment usually have maximum rated voltages of 230 V rms,
240 V rms or 250 V rms. Multiplying the 250 V value by 1.6 gives a protector VDRM value of 400 V. Allowing for operation down to 0 °C
gives a VDRM requirement of 420 V at 25 °C. This need is met by the TISP4600F3.
Overvoltage Protectors
bridging insulation
AC SUPPLY
Telecommunication
network connection
EUT
E
T
E
L
O
S
B
O
Insulation
Protective ground
connection
Th1
Th2
2 x TISP
4600F3
AI4XAI
Figure 6. ’950 TNV Network Insulation from Protective Ground
LAN Insulation Protection
In Figure 7, a low-voltage protector, Th1, from the TISP40xxL1 series limits the inter-conductor voltage of the LAN and the high-voltage
protector, Th2, limits the insulation stress to 700 V. The four diode bridge, D1 through D4, reduces the capacitive loading of the protectors on the LAN and means that only one TISP4700F3 is needed to be used for insulation protection of both LAN conductors. Low voltage diodes can be used as the maximum reverse voltage stress is limited to the V(BO) value of the TISP40xxL1 protector plus the diode
forward recovery voltage.
TISP
40xxL1
D3
D1
D4
D2
Th1
Th2
TISP
4700F3
AI4XAJ
LAN
CONDUCTORS
Figure 7. LAN Protection
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4600F3, TISP4700F3
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as follows:
Device
Symbolization
Code
TISP46 00F3
4600F3
TISP47 00F3
4700F3
E
T
E
L
O
S
B
O
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.