TISP1xxxH3BJ

CO
M
PL
IA
NT
TISP1070H3BJ THRU TISP1120H3BJ
*R
oH
S
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
The TISP1xxxH3BJ series
is obsolete and not
recommended for new designs.
TISP1xxxH3BJ Overvoltage Protector Series
Overvoltage Protection for Negative Rail SLICs
SMB03 Package (Top View)
Dual High Current Protectors in a Space Efficient Package
- 2 x 100 A 10/1000 Current Rating
- SMB03 Package (3-pin Modified SMB/DO-214AA)
50 % Space Saving over Two SMBs
1
2
3
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
Device Name
MDXXCJA
VDRM
V(BO)
V
TISP1070H3BJ
TISP1080H3BJ
TISP1095H3BJ
TISP1120H3BJ
Device Symbol
1
(T or R)
V
E
T
E
L
O
S
B
O
-58
-70
-65
-80
-75
-95
-95
-120
3
(R or T)
Rated for International Surge Wave Shapes
Wave Shape
IPPSM
Standard
A
2/10
GR-1089-CORE
500
8/20
IEC 61000-4-5
300
10/160
TIA-968-A (FCC Part 68)
200
10/700
ITU-T K.20/21/45
150
10/560
TIA-968-A (FCC Part 68)
120
10/1000
GR-1089-CORE
100
Description
SD1TAA
2
(G)
................................................UL Recognized Component
These dual unidirectional thyristor devices protect SLICs and ISDN power feeds in central office, access and customer premises equipment
against overvoltages on the telecom line. Each protector section consists of a voltage-triggered unidirectional thyristor with an anti-parallel
diode. In the negative polarity, the thyristor allows signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see
Figure 1. Voltages exceeding VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the
overvoltage, the thyristor switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the thyristor.
When the diverted current falls below the holding current, IH, level the thyristor switches off and restores normal system operation. Positive
overvoltages are limited by the conduction of the anti-parallel diode.
The TISP1xxxH3BJ is available in four voltages and has a 100 A 10/1000 current rating. These protectors have been designed particularly for
use in equipment that must meet the following standards and recommendations: GR-1089-CORE, TIA-968-A (replaces FCC Part 68), ITU-T
K.20, K.21 and K.45. Housed in a SMB03 package (3-pin modified SMB/DO-214AA), these parts are space efficient to replace protection
designs of 100 A 10/1000 or less which use multiple SMBs or a 6-pin SMT package.
How to Order
Device
Carrier
Order As
Embossed Tape Reeled
TISP1xxxH3BJR-S
Package
TISP1xxxH3BJ SMB03 (3-pin modified
SMB /DO-214AA)
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Marking Code Std. Qty.
1xxxH3
3000
TISP1xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
'1080
Repetitive peak off-state voltage, (Terminals 1-2 and 3-2) (see Note 1)
'1095
Unit
-58
'1070
-65
VDRM
V
-75
-95
'1120
Non-repetitive peak on-state pulse current (see Notes 2 and 3)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
2x500
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
2x300
10/160 (TIA-968-A (replaces FCC Part 68), 10/160 μs voltage wave shape)
5/310 (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/45/21)
2x200
IPPSM
A
2x150
5/320 (TIA-968-A (replaces FCC Part 68), 9/720 μs voltage wave shape)
2x150
10/560 (TIA-968-A (replaces FCC Part 68), 10/560 μs voltage wave shape)
2x120
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
2x100
E
T
E
L
O
S
B
O
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
Storage temperature range
2x30
ITSM
A
2x35
2x1.2
diT/dt
500
A/μs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. At -40 °C derate linearly to 0.93 x V DRM (25 °C)
2. Initially the device must be in thermal equilibrium with T J = 25 °C.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak offstate current
Test Conditions
Min
VD = VDRM
V(BO)
AC breakover voltage
dv/dt = -250 V/ms, RSOURCE = 300 Ω
I(BO)
Breakover current
dv/dt = -250 V/ms, RSOURCE = 300 Ω
Holding current
IT = -5 A,d i/dt = +30 mA/ms
dv/dt
Critical rate of rise of
off-state voltage
TA = 85 °C
-10
'1070
-70
'1080
-80
'1095
-95
ID
Off-state current
VD = -50 V
Forward voltage
IF = +5 A,t W = 500 μs
TA = 85 °C
Unit
μA
V
-120
-800
Linear voltage ramp, Maximum ramp value < 0.85 x VDRM
VF
Max
-5
'1120
IH
Typ
TA = 25 °C
mA
-150
mA
-5
kV/μs
-10
μA
3
V
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
'1070
f = 1 MHz,
Coff
Thermal Characteristics
'1070
58
'1080
55
'1095
50
'1120
42
'1095
Off-state capacitance
f = 1 MHz,
'1120
161
152
139
116
'1080
Vd = 1 V rms, VD = -2 V
Vd = 1 V rms, VD = -50 V
E
T
E
L
O
S
B
O
Parameter
Test Conditions
Typ
Min
Typ
EIA/JESD51-3 PCB,
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000) , TA = 25 °C
Unit
pF
Max
Unit
113
TA = 25 °C, (see Note 4)
R θJA Junction to free air thermal resistance
Max
°C/W
52
NOTE 4: EIA/JESD51-2 environment and PCB have standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
IPPSM
Forward
Conduction
Characteristic
IFSM
IF
VF
V DRM
-v
VD
+v
ID
IDRM
E
T
E
L
O
S
B
O
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
IPPSM
Switching
Characteristic
-i
PMXXACd
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V DRM
-v
VD
IDRM
ID
ID
IDRM
VD
V DRM
+v
IH
I(BO)
V(BO)
VT
IT
ITSM
Quadrant III
Switching
Characteristic
IPPSM
-i
PM4XAG
Figure 2. Voltage-Current Characteristic for Terminal Pair 1-3
All Measurements are Referenced to Terminal 3
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC-TC3xx-001-a
100
1.10
ID - Off-State Current -
A
Normalized Breakover Voltage
10
1
1.05
E
T
E
L
O
S
B
O
0.1
1
V D = -50 V
0.01
0.001
-25
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC-TC3xx-002-a
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
1.00
0.95
-25
Figure 3.
50
40
30
20
15
10
7
5
4
3
VF
VT
2
1.5
1
0.7
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC-TC3xx-004-a
1.5
70
Normalized Holding Current
IT , IF - On-State Current, Forward Current - A
100
2.0
TA = 25 °C
tW < 100 s
150
Figure 4.
ON-STATE AND FORWARD CURRENTS
vs
ON-STATE AND FORWARD VOLTAGES
200
150
0
25
50
75
100 125
TJ - Junction Temperature - °C
1.0
0.9
0.8
0.7
0.6
0.5
1
1.5
2
3
4 5
7
10
V T , V F- On-State Voltage, Forward Voltage - V
Figure 5.
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
0.4
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 6.
150
TISP1xxxH3BJ Overvoltage Protector Series
Typical Characteristics (Continued)
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC-TC3xx-005-a
Capacitance Normalized to V D = -2
1.5
TJ = 25°C
V d = 1 Vrms
1
0.9
0.8
0.7
0.6
0.5
E
T
E
L
O
S
B
O
0.4
0.3
0.2
1
2
3
5
10
20 30
V D - Negative Off-state Voltage - V
50
Figure 7.
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TI-TC3xx-001-a
ITSM(t) - Non-Repetitive Peak On-State Current - A
30
V GEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*V GEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, TA = 25 °C
SIMULTANEOUS OPERATION
OF R AND T TERMINALS. G
TERMINAL CURRENT = 2xITSM(t)
20
15
10
9
8
7
6
5
4
3
2
1.5
1
0.1
1
10
100
1000
t - Current Duration - s
Figure 8.
JUNE 2003 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
Phone
Fax
The Americas:
+1-909-781-5500
+1-909-781-5700
Europe:
+41(0)41-7685555
+41(0)41-7685510
Asia-Pacific:
+886-2-25624117
+886-2-25624116
E
T
E
L
O
S
B
O
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
Phone
Fax
+1-951-781-5500
+1-951-781-5700
+41(0)41-7685555
+41(0)41-7685510
+886-2-25624117
+886-2-25624116
www.bourns.com
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