tisp61089qb

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TISP61089QB
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PROGRAMMABLE OVERVOLTAGE PROTECTOR
QUAD FORWARD-CONDUCTING P-GATE THYRISTOR
TISP61089QB SLIC Overvoltage Protector
Quad Voltage-Programmable Protector
- Wide -20 V to -155 V Programming Range
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
- Rated for ITU-T and YD/T-950 10/700 impulses
- Rated for Telcordia Intra-building impulses
D Package (Top View)
1
8
K2
G1,G2
2
7
A
G3,G4
3
6
A
4
5
K4
K1
K3
10/700 Protection Voltage Specified
Element
Protection Level
40 A, 5/310
Diode
+12
Crowbar
VGG = -48 V
-64
MDRXAN
Device Symbol
K1
G1,G2
Description
Bourns® TISP61089QB is a quad forward-conducting buffered p-gate
overvoltage protector. It is designed to protect monolithic SLICs
(Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The
TISP61089QB limits voltages that exceed the SLIC supply rail voltage.
The TISP61089QB parameters are specified to allow equipment compliance with Telcordia GR-1089-CORE Intra-building, ITU-T K.20, K.21 and
K.45 and YD/T-950.
K2
A
A
K3
The SLIC line driver section is typically powered from 0 V (ground) and a
negative voltage in the region of -20 V to -155 V. The protector gate is
connected to this negative supply. This references the protection
(clipping) voltage to the negative supply voltage. As the protection
voltage will then track the negative supply voltage the overvoltage stress
on the SLIC is minimized.
G3,G4
SDRXAIA
K4
Positive overvoltages are clipped to ground by diode forward conduction.
Negative overvoltages are initially clipped close to the SLIC negative supply
rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the
overvoltage subsides, the high holding current of the crowbar helps prevent d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and are virtually
transparent in normal operation. The TISP61089QB buffered gate design reduces the loading on the SLIC supply during overvoltages caused
by power cross and induction. The TISP61089QB is available in an 8-pin plastic small-outline surface mount package.
How to Order
Device
Package
TISP61089QB
8 Pin Small Outline (D008)
Carrier
Embossed Tape Reeled
Order As
Marking Code
TISP61089QBDR-S
1089QB
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2010 - REVISED MAY 2012
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Standard Quantity
2500
TISP61089QB SLIC Overvoltage Protector
Absolute Maximum Ratings, TJ = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
VDRM
-170
V
-40 °C ≤ TJ ≤ 85 °C VGKRM
-167
V
Repetitive peak off-state voltage, IG = 0
-40 °C ≤ TJ ≤ 85 °C
Repetitive peak gate-cathode voltage, VKA = 0
U nit
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
5/310 µs (ITU-T K.20/21/45, YD/T-950, open circuit voltage waveshape 10/700)
2/40 µs (IEC61000-4-5, 1.2/50 µs open circuit voltage, 2 ohm + 10 ohm, see Note 4)
2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
30
40
85
120
ITSP
Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)
ITSM
900 s
Non-repetitive peak gate current, 2/10 µs pulse, cathodes commoned (see Notes 1 and 2)
A
A
0.5
IGSM
40
A
TJ
-40 to +150
°C
Tstg
-40 to +150
°C
Junction temperature
Storage temperature range
NOTES: 1. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathodeanode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
3. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
4. Combination wave generator as specified in ITU-T K.20, K.21, K.44.
Recommended Operating Conditions
Min
CG Gate decoupling capacitor
Typ
Max
100
Unit
nF
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter
ID
Off-state current
V(BO)
Breakover voltage
VF
Forward voltage
VFRM
Peak forward recovery
voltage
Max
Unit
VD = VDRM, VGK = 0
Test Conditions
Min
Typ
-5
µA
10/700 µs, IT = -40 A, RS = 55 Ω, VGG = -48 V, CG = 100 nF
-64
V
3
V
IF = 5 A, tw = 200 µs
10/700 µs, IF = 40 A, RS = 55 Ω, VGG = -48 V, CG = 100 nF
12
IH
Holding current
IGAS
Gate reverse current
VGG = VGK = VGKRM, VKA = 0
-5
µA
IGT
Gate trigger current
IT = 3 A, tp(g) ≥ 20 µs, VGG = -100 V
5
mA
Gate trigger voltage
IT = 3 A, tp(g) ≥ 20 µs, VGG = -100 V
2.5
V
VGT
CAK
NOTE:
IT = -1 A, di/dt = 1 A/ms, VGG = -100 V
V
Anode-cathode off-state
f = 1 MHz, Vd = 1 V IG = 0, (see Note 5)
capacitance
- 150
mA
VD = -3 V
100
VD = -48 V
50
pF
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
JULY 2010 - REVISED MAY 2012
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61089QB SLIC Overvoltage Protector
Thermal Characteristics
Parameter
RθJA
Test Conditions
Junction to free air thermal resistance
Ptot = 0.8 W, TA = 25 °C
5 cm2, FR4 PCB
Min
Typ
Max
Unit
160
°C/W
Parameter Measurement Information
+i
Quadrant I
IFSP (= |TSP )
Forward
Conduction
Characteristic
IFSM (= |TSM )
IF
VF
VGK(BO)
VGG
-v
VD
ID
I(BO)
IH
IS
V(BO)
+v
VT
VS
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
Figure 1. Voltage-Current Characteristic
JULY 2010 - REVISED MAY 2012
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM6XAAA
TISP61089QB SLIC Overvoltage Protector
Applications Information
Typical Applications Circuit
Figure 2 shows a typical TISP61089QB SLIC card protection circuit. The incoming line conductors, RING1/RING2 and TIP1/TIP2, connect to
the relay matrix via the series overcurrent protection. Positive temperature coefficient (PTC) thermistors can be used for overcurrent protection.
The resistance of the PTC thermistor will reduce the prospective current from the surge generator for the TISP61089QB.
-V BAT1
MF-SD013/250
100nF
TIP1
SLIC #1
RING1
TISP61089QB
TIP2
SLIC #2
RING2
GND
-V BAT2
100nF
MF-SD013/250
JULY 2010 - REVISED MAY 2012
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
Phone
Fax
The Americas:
+1-951-781-5500
+1-951-781-5700
Europe:
+41(0)41-7685555
+41(0)41-7685510
Asia-Pacific:
+886-2-25624117
+886-2-25624116
Phone
Fax
Technical Assistance
Region
The Americas:
+1-951-781-5500
+1-951-781-5700
Europe:
+41(0)41-7685555
+41(0)41-7685510
Asia-Pacific:
+886-2-25624117
+886-2-25624116
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a registered trademark of Bourns Ltd., a Bourns Company, in the United States and other countries, except that “TISP” is a registered
trademark of Bourns, Inc. in China.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.