ETC TISP6NTP2B

oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
TISP6NTP2B
*R
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
TISP6NTP2B Programmable Protector
Overvoltage Protection for ISDN DC Feeds:
– Supply Voltages Down to -120 V
– Low 5 mA max. Gate Triggering Current
– High 150 mA min. (25 °C) Holding Current
D Package (Top View)
Rated for Common Impulse Waveforms
Voltage Impulse
Form
Current Impulse
Shape
10/1000 µs
10/700 µs
1.2/50 µs
2/10 µs
10/1000 µs
5/310 µs
8/20 µs
2/10 µs
K1
1
8
K2
G1,G2
2
7
A
G3,G4
3
6
A
K3
4
5
K4
ITSP
A
20
25
60
70
MDRXAM
Device Symbol
K1
.............................................. UL Recognized Component
G1,G2
Description
The TISP6NTP2B has an array of four buffered P-gate forward
conducting thyristors with twin commoned gates and a common
anode connection. Each thyristor cathode has a separate
terminal connection. An antiparallel anode-cathode diode is
connected across each thyristor. The buffer transistors reduce
the gate supply current.
K2
A
A
K3
In use, the cathodes of an TISP6NTP2B thyristors are connected
to the four conductors to be protected (see Figure 2 and Figure
3). Each gate is connected to the appropriate negative voltage
feed. The anode of the TISP6NTP2B is connected to the system
common. The TISP6NTP2B is in an 8-pin small-outline surface
mount package.
Positive overvoltages are clipped to common by forward
conduction of the TISP6NTP2B antiparallel diode. In Figure 2, a
negative overvoltage draws a current through the 6.8 Ω resistor
and the voltage developed triggers the thyristor on. In Figure 3,
negative overvoltages are initially clipped close to the negative
supply by emitter follower action of the TISP6NTP2B buffer
transistor. If sufficient clipping current flows, the TISP6NTP2B
thyristor will regenerate and switch into a low voltage on-state
condition. As the negative overvoltage subsides, the high
holding current of the TISP6NTP2B prevents d.c. latchup.
G3,G4
K4
How To Order
Device
Package
For Standard
Termination Finish
Order As
Carrier
Tape and Reel TISP6NTP2BDR
TISP6NTP2B D, Small-Outline
Tube
TISP6NTP2BD
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
For Lead Free
Termination Finish
Order As
TISP6NTP2BDR-S
TISP6NTP2BD-S
SDRXAI
TISP6NTP2B Programmable Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, IG = 0
VDRM
-130
V
Repetitive peak gate-cathode voltage, VKA = 0
VGKRM
-120
V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
20
0.2/310 µs (I3124, open-circuit voltage wave shape 0.5/700 µs)
5/310 µs (ITU-T K.20 & K.21, open-circuit voltage wave shape 10/700 µs)
8/20 µs (IEC 61000-4-5:1995, open-circuit voltage wave shape 1.2/50 µs)
25
25
60
ITSP
2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
A
70
Non-repetitive peak on-state current, 50/60 Hz, (see Notes 1 and 2)
100 ms
7
1s
5s
300 s
900 s
2.7
1.5
0.45
0.43
ITSM
Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Note 1)
A
IGSM
25
A
TA
-40 to +85
°C
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Operating free-air temperature range
NOTES: 1. Initially the protector must be in thermal equilibrium. The surge may be repeated after the device returns to its initial conditions.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathodeanode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in
this case the anode terminal current will be four times the rated current value of an individual terminal pair).
Recommended Operating Conditions
Min.
R1, R2
Series resistor for ITU-T recommendation K.20
Seeries resistor for ITU-T recommendation K.21
Typ.
Max.
12
20
Unit
Ω
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min.
Off-state current
VD = VDRM, IG = 0
VF
Forward voltage
IF = 0.6 A, t w = 500 µs, VGG = -50 V
IF = 18 A, t w = 500 µs, VGG = -50 V
IH
Holding current
IT = -1 A, di/dt = 1A/ms, VGG = -50 V, TJ = 85 °C
ID
Max.
Unit
TJ = 25 °C
Typ.
-5
µA
TJ = 85 °C
-50
µA
3
5
V
-150
mA
TJ = 25 °C
-5
µA
TJ = 85 °C
-50
µA
IGKS
Gate reverse current
VGG = VGKRM, VAK = 0
IGAT
Gate reverse current,
on state
IT = -0.6 A, t w = 500 µs, VGG = -50 V
-1
mA
IGAF
Gate reverse current,
forward conducting
state
IF = 0.6 A, t w = 500 µs, VGG = -50 V
-40
mA
IGT
Gate trigger current
IT = -5 A, t p(g) ≥ 20 µs, VGG = -50 V
5
mA
VGT
Gate trigger voltage
IT = -5 A, t p(g) ≥ 20 µs, VGG = -50 V
2.5
V
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted) (continued)
Parameter
CAK
NOTE
Test Conditions
Anode-cathode offstate capacitance
f = 1 MHz, Vd = 1 V, IG = 0, (see Note 3)
Max.
Unit
VD = -3 V
Min.
Typ.
100
pF
VD = -50 V
60
pF
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
R θJA
Junction to free air thermal resistance
Test Conditions
Ptot = 0.52 W, TA = 85 °C, 5 cm2, FR4 PCB
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min.
Typ.
Max.
Unit
160
°C/W
TISP6NTP2B Programmable Protector
Parameter Measurement Information
PR IN C IPA L TER MIN A L V-I C H AR A C TER ISTIC
G AT E TR AN SFER
C H AR A C TER ISTIC
+i
+i K
Q uadran t I
I FSP (= |I TSP |)
Forw ard
C onduction
C haracteristic
I FSM (= |I TSM |)
IF
IF
VF
V G K (B O )
V GG
-v
IG T
VD
+v
ID
I (B O )
VS
+i G
IG A F
IH
IS
V (BO)
-i G
VT
IG A T
IT
IT
I TSM
IG
Q uadran t III
Sw itchin g
C haracteristic
IK
I TSP
-i
P M6X AIA
-i K
Figure 1. Principal Terminal And Gate Transfer Characteristics
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
R1A
t°
R1B
t°
6.8 Ω
NUMBER OF
NEGATIVE CLAMP
DIODES DEPENDS
ON "0V" POTENTIAL
"0 V"
ELECTRONIC
SOURCE
-VE
ELECTRONIC
SINK
TWIN
ISDN
POWER
SUPPLY
TISP6NTP2B
6.8 Ω
R2B
-VE
ELECTRONIC
SINK
"0 V"
ELECTRONIC
SOURCE
t°
R2A
t°
Figure 2. Protection of Two ISDN Power Feeds
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NEGATIVE
SUPPLY
TISP6NTP2B Programmable Protector
APPLICATIONS INFORMATION
R1A
ELECTRONIC
SINK
-VE
t°
R
0
t°
R1B
ELECTRONIC
SINK
-VE
t°
0
t°
R
RESISTOR "R"
MAY BE NEEDED
IF SINK HAS
INTERNAL
CLAMP DIODE
R2A
ELECTRONIC
SINK
-VE
t°
ISDN
POWER
SUPPLY
R
0
t°
R2B
ELECTRONIC
SINK
-VE
t°
R
0
t°
NEGATIVE
SUPPLY
TISP6NTP2B
Figure 3. Protection of Four ISDN Power Feeds
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP6NTP2B Programmable Protector
MECHANICAL DATA
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
8
7
6
5
1
2
3
4
INDEX
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
0.25 - 0.50 x 45 ° N0M
(0.010 - 0.020)
7 ° NOM
3 Places
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
DIMENSIONS ARE:
NOTES: A.
B.
C.
D.
0.36 - 0.51
(0.014 - 0.020)
8 Places
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
4.60 - 5.21
(0.181 - 0.205)
4°±4°
7 ° NOM
4 Places
0.190 - 0.229
(0.0075 - 0.0090)
0.51 - 1.12
(0.020 - 0.044)
MILLIMETERS
(INCHES)
Leads are within 0.25 (0.010) radius of true position at maximum material condition.
Body dimensions do not include mold flash or protrusion.
Mold flash or protrusion shall not exceed 0.15 (0.006).
Lead tips to be planar within ±0.051 (0.002).
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MDXXAAC
TISP6NTP2B Programmable Protector
MECHANICAL DATA
D008 Tape DImensions
D008 Package (8-pin Small Outline) Single-Sprocket Tape
1.50 - 1.60
(.059 - .063)
3.90 - 4.10
(.154 - .161)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
0.40
(0.016)
0.8
MIN.
(0.03)
5.40 - 5.60
(.213 - .220)
6.30 - 6.50
(.248 - .256)
ø
Carrier Tape
Embossment
DIMENSIONS ARE:
1.50
MIN.
(.059)
11.70 - 12.30
(.461 - .484)
Cover
0 MIN.
Tape
Direction of Feed
2.0 - 2.2
(.079 - .087)
MILLIMETERS
(INCHES)
NOTES: A. Taped devices are supplied on a reel of the following dimensions:Reel diameter:
MDXXATB
330 +0.0/-4.0
(12.992 +0.0/-.157)
Reel hub diameter:
100 ± 2.0
(3.937 ± .079)
Reel axial hole:
13.0 ± 0.2
(.512 ± .008)
B. 2500 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JUNE 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.