Radiation Hardened Ultra Low Noise, Precision Voltage Reference ISL71090SEH12 Features The ISL71090SEH12 is an ultra low noise, high DC accuracy precision voltage reference with a wide input voltage range from 4V to 30V. The ISL71090SEH12 uses the Intersil Advanced Bipolar technology to achieve sub 2µVP-P noise at 0.1Hz with an accuracy over temperature and radiation of 0.15%. • Reference output voltage . . . . . . . . . . . . . . . . . 1.25V ±0.05% • Accuracy over temperature and radiation . . . . . . . . . .±0.15% • Output voltage noise . . . . . . . . . . 1µVP-P Typ (0.1Hz to 10Hz) • Supply current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 930µA (Typ) • Tempco (box method) . . . . . . . . . . . . . . . . . . . 10ppm/°C Max The ISL71090SEH12 offers a 1.25V output voltage with 10ppm/°C temperature coefficient and also provides excellent line and load regulation. The device is offered in an 8 Ld Flatpack package. • Output current capability . . . . . . . . . . . . . . . . . . . . . . . . 20mA The ISL71090SEH12 is ideal for high-end instrumentation, data acquisition and applications requiring high DC precision where low noise performance is critical. • Operating temperature range. . . . . . . . . . . .-55°C to +125°C Applications • RH voltage regulators precision outputs • Precision voltage sources for data acquisition system for space applications • Strain and pressure gauge for space applications • Line regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8ppm/V • Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . 35ppm/mA • Radiation environment - High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)* - SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . . . 86MeV•cm2/mg *Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate • Electrically screened to SMD 5962-13211 Related Literature • AN1862, “ISL71090SEH12 Evaluation Board User’s Guide” • AN1863, “SEE Testing of the ISL71090SEH12” • AN1864, “Radiation Report of the ISL71090SEH12” ISL71090SEH12 1 2 VIN 0.1µF 3 4 DNC DNC VIN DNC COMP VOUT GND TRIM 8 7 VREF 1.2530 6 5 UNIT3 1.2525 1µF UNIT5 C REFIN VDD VEE VDD DACOUT BIPOFF NOTE: Select C to minimize settling time. D0 1.1k GND UNIT2 UNIT4 1.2505 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (°C) HS-565BRH 1 1.2515 1.2500 -60 FIGURE 1. ISL71090SEH12 TYPICAL APPLICATION DIAGRAM June 26, 2013 FN8452.0 UNIT1 1.2510 D12 VEE VOUT (V) 1.2520 FIGURE 2. VOUT vs TEMPERATURE CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL71090SEH12 Ordering Information ORDERING NUMBER (Notes 1, 2, 3) PART NUMBER VOUT OPTION (V) TEMP RANGE (°C) PACKAGE TAPE & REEL (Pb-Free) PKG. DWG. # 5962R1321101VXC ISL71090SEHVF12 1.25 -55 to +125 8 Ld Flatpack K8.A ISL71090SEHF12/PROTO ISL71090SEHF12/PROTO 1.25 -55 to +125 8 Ld Flatpack K8.A ISL71090SEHF12EVAL1Z Evaluation Board NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. For Moisture Sensitivity Level (MSL), please see device information page for ISL71090SEH12. For more information on MSL please see tech brief TB363 3. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in this “Ordering Information” table must be used when ordering. Pin Configuration ISL71090SEH12 (8 LD FLATPACK) TOP VIEW DNC 1 8 DNC VIN 2 7 DNC COMP 3 6 VOUT GND 4 5 TRIM Pin Descriptions PIN NUMBER PIN NAME ESD CIRCUIT DESCRIPTION 1, 7, 8 DNC 3 Do not Connect. Internally terminated. 2 VIN 1 Input Voltage Connection 3 COMP 2 Compensation and Noise Reduction Capacitor 4 GND 1 Ground Connection. Also connected to the lid. 5 TRIM 2 Voltage Reference Trim input 6 VOUT 2 Voltage Reference Output VDD VDD CAPACITIVELY TRIGGERED CLAMP VDD PIN DNC GND GND ESD CIRCUIT 1 2 ESD CIRCUIT 2 ESD CIRCUIT 3 FN8452.0 June 26, 2013 ISL71090SEH12 Functional Block Diagram VIN BIAS REGULATOR DNC BAND GAP REFERENCE DNC 3.7V DNC 1.2V Gm VOUT GND COMP TRIM 1.2V 3 FN8452.0 June 26, 2013 ISL71090SEH12 Absolute Maximum Ratings Thermal Information Max Voltage VIN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +40V VIN to GND at an LET = 86MeV • cm2/mg . . . . . . . . . . . . . . -0.5V to +36V VOUT to GND (10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VOUT + 0.5V Voltage on any Pin to Ground . . . . . . . . . . . . . . . . . -0.5V to +VOUT + 0.5V Voltage on DNC Pins . . . . . . . . . . . . No connections permitted to these pins ESD Ratings Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V θJA (°C/W) θJC (°C/W) Thermal Resistance (Typical) 8 Ld Flatpack Package (Notes 4, 5). . . . . . 140 15 Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Maximum Junction Temperature (TJMAX). . . . . . . . . . . . . . . . . . . . . .+150°C Pb-Free Reflow Profile (Note 6). . . . . . . . . . . . . . . . . . . . . . . . see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Recommended Operating Conditions VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to +30V Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 5. For θJC, the "case temp" location is the center of the ceramic on the package underside. 6. Post-reflow drift for the ISL71090SEH12 devices can be 100µV typical based on experimental results with devices on FR4 double sided boards. The engineer must take this into account when considering the reference voltage after assembly. 7. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate. 8. The output capacitance used for SEE testing is CIN = 0.1µF and COUT = 1µF. Electrical Specifications VIN = 5V, IOUT = 0, CL = 0.1µF and CC = 0.01µF unless otherwise specified. Boldface limits apply over the operating temperature range, -55°C to +125°C. PARAMETER DESCRIPTION CONDITIONS MIN (Note 9) TYP MAX (Note 9) UNIT % VOUT Output Voltage VIN = 5V VOA VOUT Accuracy @ TA = +25°C (Note 6) VOUT = 1.25V -0.05 +0.05 VOA VOUT Accuracy @ TA = -55°C to +125°C VOUT = 1.25V -0.15 +0.15 % 10 ppm/°C 30 V TC VOUT 1.252 Output Voltage Temperature Coefficient (Note 11) VIN Input Voltage Range (Note 10) VOUT = 1.25V 4.0 V IIN Supply Current ΔVOUT /ΔVIN Line Regulation ΔVOUT/ΔIOUT Load Regulation Sourcing: 0mA ≤ IOUT ≤ 20mA VD Dropout Voltage (Note 10) VOUT = 1.25V @ 10mA ISC+ Short Circuit Current TA = +25°C, VOUT tied to GND 53 mA ISC- Short Circuit Current TA = +25°C, VOUT tied to VIN -23 mA tR Turn-on Settling Time 90% of final value, CL = 1.0µF, CC = open 250 µs Ripple Rejection f = 120Hz 90 dB eN Output Voltage Noise 0.1Hz ≤ f ≤ 10Hz, VOUT = 1.25V 1.0 µVP-P VN Broadband Voltage Noise 10Hz ≤ f ≤ 1kHz, VOUT = 1.25V 1.2 µVRMS PSRR ΔVOUT/Δt VIN = 4.0V to 30V, VOUT = 1.25V 0.930 1.28 mA 8 18 ppm/V 35 55 ppm/mA 1.7 2.25 V Noise Density f = 1kHz, VOUT = 1.25V, VIN = 6V 21 nV/√Hz Long Term Drift TA = 125°C, 1000hrs 15 ppm NOTES: 9. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. 10. VIN-VOUT measured at the point where VOUT drops 1mV from the nominal measured value. 11. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT(max) - VOUT(min) is divided by the temperature range; in this case, -55°C to +125°C = +180°C. 12. Dropout Voltage is the minimum VIN - VOUT differential voltage measured at the point where VOUT drops 1mV from VIN = nominal at TA = +25°C. 4 FN8452.0 June 26, 2013 ISL71090SEH12 Typical Performance Curves V 4 IN = 5V, VOUT = 1.25V, TA = +25°C, unless otherwise specified. 20 LINE REG ppm/V +125°C 10 2 LOAD REG (ppm/mA) LINE REG (ppm/V) 3 LINE REG ppm/V +25°C 1 0 LINE REG ppm/V -55°C -1 -2 0 5 10 15 20 25 30 0 -20 LOAD REG ppm/mA (VIN = 5V +25°C) -30 -40 -50 35 LOAD REG ppm/mA (VIN = 5V -55°C) -10 LOAD REG ppm/mA (VIN = 5V +125°C) 0 2 4 VIN (V) 6 8 10 12 14 16 18 20 IOUT (mA) FIGURE 3. LINE REGULATION OVER TEMPERATURE (0mA) FIGURE 4. LOAD REGULATION OVER TEMPERATURE AT VIN = 5V (ppm/mA) 1.2520 1.2515 VOUT (V) -10mA +25°C VOUT (V) -10mA -55°C VOUT (V) 1.2510 VOUT (V) 0mA +25°C 1.2505 VOUT (V) 0mA -55°C VOUT (V) 20mA -55°C 1.2500 VOUT (V) 20mA +25°C VOUT (V) -10mA +125°C 1.2495 VOUT (V) 0mA +125°C 1.2490 1.2485 VOUT (V) 20mA +125°C 0 5 10 15 20 25 30 35 VIN (V) FIGURE 5. VOUT vs VIN AT 0mA, 20mA AND -10mA 3.0 40 DROPOUT V AT +150°C 30 1.5 DROPOUT V AT +25°C DROPOUT V AT +125°C 1.0 10 0 -10 -20 0.5 0 +25°C VIN = 5V, VOUT = 1.25V, IOUT = 0mA TO 1mA TO 0mA, COMP = 1nF, COUT = 1µF, V/DIV = 20mV/DIV 20 2.0 ΔVOUT (mV) DROPOUT (V) 2.5 -30 0 0.005 0.010 0.015 0.020 IOUT (mA) FIGURE 6. DROPOUT VOLTAGE FOR 1.25V 5 0.025 -40 -200 0 200 400 600 800 TIME (µs) FIGURE 7. LOAD TRANSIENT (0mA TO 1mA) FN8452.0 June 26, 2013 ISL71090SEH12 Typical Performance Curves V IN = 5V, VOUT = 1.25V, TA = +25°C, unless otherwise specified. (Continued) VOUT 200mV/DIV 1.2530 UNIT3 1.2525 UNIT5 VOUT (V) 1.2520 VIN 10V/DIV UNIT1 1.2515 UNIT2 1.2510 UNIT4 1.2505 1.2500 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (°C) 50µs/DIV FIGURE 8. TURN-ON SETTLING TIME FIGURE 9. TYPICAL TEMPERATURE COEFFICIENT PLOT FOR 5 UNITS 0 1.E-05 PSRR (dB) NOISE (V/√Hz) -20 1.E-06 1.E-07 -40 -60 -80 1.E-08 -100 1.E-09 0.1 f = 1kHz, En = 21.02nV/√Hz 1 10 100 1k 10k 100k FREQUENCY (Hz) FIGURE 10. NOISE DENSITY vs FREQUENCY (VIN = 6V, Rl = OPEN) 6 -120 10 100 1k 10k 100k 1M FREQUENCY (Hz) FIGURE 11. PSRR (+25°C, VIN = 5V, VOUT = 1.25V, IOUT = 0mA, CIN = 0.1µF, COUT = 1µF, COMP = 1nF, VSIG = 300mVP-P) FN8452.0 June 26, 2013 ISL71090SEH12 Device Operation Output Voltage Adjustment Bandgap Precision Reference The output voltage can be adjusted above and below the factory-calibrated value via the trim terminal. The trim terminal is the negative feedback divider point of the output op amp. The positive input of the amplifier is about 1.216V, and in feedback, so will be the trim voltage. The suggested method to adjust the output is to connect a 1MΩ external resistor directly to the trim terminal and connect the other end to the wiper of a potentiometer that has a 100kΩ resistance and whose outer terminals connect to VOUT and ground. If a 1MΩ resistor is connected to trim, the output adjust range will be ±6.3mV. The TRIM pin should not have any capacitor tied to its output, also it is important to minimize the capacitance on the trim terminal during layout to preserve output amplifier stability. It is also best to connect the series resistor directly to the trim terminal, to minimize that capacitance and also to minimize noise injection. Small trim adjustments will not disturb the factory-set temperature coefficient of the reference, but trimming near the extreme values can. The ISL71090SEH12 uses a bandgap architecture and special trimming circuitry to produce a temperature compensated, precision voltage reference with high input voltage capability and moderate output current drive. Applications Information Board Mounting Considerations For applications requiring the highest accuracy, board mounting location should be reviewed. The device uses a ceramic flatpack package. Generally, mild stresses to the die when the printed circuit (PC) board is heated and cooled, can slightly change the shape. Because of these die stresses, placing the device in areas subject to slight twisting can cause degradation of reference voltage accuracy. It is normally best to place the device near the edge of a board, or on the shortest side, because the axis of bending is most limited in that location. Mounting the device in a cutout also minimizes flex. Obviously, mounting the device on flexprint or extremely thin PC material will likewise cause loss of reference accuracy. Board Assembly Considerations Some PC board assembly precautions are necessary. Normal output voltage shifts of typically 100µV can be expected with Pb-free reflow profiles or wave solder on multi-layer FR4 PC boards. Precautions should be taken to avoid excessive heat or extended exposure to high reflow or wave solder temperatures. Output Stage The output stage of the device has a push pull configuration with an high side PNP and a low side NPN. This helps the device to act as a source and sink. The device can source 20mA. Use of COMP Cap The reference can be compensated for the COUT capacitors used by adding a capacitor from COMP pin to GND. See Table 1 for recommended values. of the COMP capacitor. TABLE 1. Noise Performance and Reduction The output noise voltage over the 0.1Hz to 10Hz bandwidth is typically 2µVP-P (VOUT = 1.25V). The noise measurement is made with a 9.9Hz bandpass filter. Noise in the 10Hz to 1kHz bandwidth is approximately 1.6µVRMS (VOUT = 1.25V), with 0.1µF capacitance on the output. This noise measurement is made with a band pass filter of 990Hz. Load capacitance up to 10µF (with COMP) can be added but will result in only marginal improvements in output noise and transient response. Turn-On Time Normal turn-on time is typically 250µs, the circuit designer must take this into account when looking at power-up delays or sequencing. Temperature Coefficient The limits stated for temperature coefficient (Tempco) are governed by the method of measurement. The overwhelming standard for specifying the temperature drift of a reference is to measure the reference voltage at two temperatures which provide for the maximum voltage deviation and take the total variation, (VHIGH - VLOW), this is then divided by the temperature extremes of measurement (THIGH – TLOW). The result is divided by the nominal reference voltage (at T = +25°C) and multiplied by 106 to yield ppm/°C. This is the “Box” method for specifying temperature coefficient. 7 COUT (µF) CCOMP (nF) 0.1 1 1 1 10 10 SEE Testing The device was tested under ion beam at an LET of 86MeV•cm2/mg. The device did not latch up or burn out to a VDD of 36V and at +125°C. Single Event transients were observed and are summarized in the Table 2: TABLE 2. VIN (V) IOUT (mA) COUT (µF) SET (% VOUT) 4 5 1 -4.6 30 5 1 -4.4 30 5 10 -1.0 DNC Pins These pins are for trimming purpose and for factory use only. Do not connect these to the circuit in any way. It will adversely effect the performance of the reference. FN8452.0 June 26, 2013 ISL71090SEH12 Package Characteristics TOP METALLIZATION Type: AlCu (99.5%/0.5%) Thickness: 30kÅ Weight of Packaged Device 0. 31 Grams (Typical) BACKSIDE FINISH Lid Characteristics Silicon Finish: Gold Potential: Connected to lead #4 (GND) Case Isolation to Any Lead: 20 x 109 Ω (min) ASSEMBLY RELATED INFORMATION SUBSTRATE POTENTIAL Floating Die Characteristics ADDITIONAL INFORMATION Die Dimensions 1464µm x 1744µm (58mils x 69mils) Thickness: 483µm ± 25µm (19mils ± 1 mil) WORST CASE CURRENT DENSITY <2 x 105 A/cm2 Interface Materials PROCESS Dielectrically Isolated Advanced Bipolar Technology- PR40 SOI GLASSIVATION Type: Nitrox Thickness: 15kÅ Metallization Mask Layout DNC DNC DNC VS COMP VOUT SENSE GND POWR VOUT FORCE GND QUIET 8 (see Note 13, Table 3) TRIM FN8452.0 June 26, 2013 ISL71090SEH12 TABLE 3. DIE LAYOUT X-Y COORDINATES PAD NAME PIN NUMBER X (µm) Y (µm) BOND WIRES PER PAD GND PWR 4 -104 0 1 GND QUIET 4 0 0 1 COMP 3 -108 589 1 VS 2 -125 1350 1 DNC 1 -108 1452 1 DNC 8 1089 1452 1 DNC 7 1089 1350 1 VOUT SENSE 6 1072 598 1 VOUT FORCE 6 1088 1 1 TRIM 5 985 -25 1 NOTES: 13. Origin of coordinates is the centroid of GND QUIET. 14. Bond wire size is 1.0 mil. Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION June 26, 2013 FN8452.0 CHANGE Initial Release. About Intersil Intersil Corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management semiconductors. The company's products address some of the largest markets within the industrial and infrastructure, personal computing and high-end consumer markets. For more information about Intersil, visit our website at www.intersil.com. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/en/support/ask-an-expert.html. Reliability reports are also available from our website at http://www.intersil.com/en/support/qualandreliability.html#reliability For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 9 FN8452.0 June 26, 2013 ISL71090SEH12 Package Outline Drawing K8.A 8 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE Rev 3, 3/13 0.015 (0.38) 0.008 (0.20) PIN NO. 1 ID OPTIONAL 1 2 0.050 (1.27 BSC) 0.005 (0.13) MIN 4 PIN NO. 1 ID AREA 0.022 (0.56) 0.015 (0.38) 0.110 (2.79) 0.087 (2.21) 0.265 (6.73) 0.245 (6.22) TOP VIEW 0.036 (0.92) 0.026 (0.66) 0.009 (0.23) 0.004 (0.10) 6 0.265 (6.75) 0.245 (6.22) -D- -H- -C- 0.180 (4.57) 0.170 (4.32) SEATING AND BASE PLANE 0.370 (9.40) 0.325 (8.26) 0.03 (0.76) MIN SIDE VIEW 0.007 (0.18) 0.004 (0.10) NOTES: LEAD FINISH 0.009 (0.23) BASE METAL 0.004 (0.10) 0.019 (0.48) 0.015 (0.38) 0.0015 (0.04) MAX 0.022 (0.56) 0.015 (0.38) 2. If a pin one identification mark is used in addition to a tab, the limits of the tab dimension do not apply. 3. The maximum limits of lead dimensions (section A-A) shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 4. Measure dimension at all four corners. 3 SECTION A-A 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. Alternately, a tab may be used to identify pin one. 5. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the leads. 6. Dimension shall be measured at the point of exit (beyond the meniscus) of the lead from the body. Dimension minimum shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied. 7. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 8. Controlling dimension: INCH. 10 FN8452.0 June 26, 2013