SKKE 1200/18 H4 Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 1376 Tc = 100 °C 1180 A Tj = 25 °C 45000 A Tj = 160 °C 40000 A Tj = 25 °C 10125000 A²s Tj = 160 °C 8000000 A²s VRSM 1900 V VRRM 1800 V -40 ... 160 °C -40 ... 125 °C 1 min 4000 V 1s 4800 V IFAV IFSM i2t SEMIPACK® 6 Rectifier Diode Modules sin. 180° 10 ms 10 ms Tj Module Tstg SKKE 1200/18 H4 Visol Features Characteristics • Precisious metal pressure contacts for high reliability • UL recognized, file no. E 63 532 Symbol Typical Applications* • Rectifiers a.c.; 50 Hz; r.m.s. Conditions min. typ. max. Unit Diode VF Tj = 25 °C, IF = 3000 A 1.40 V V(TO) Tj = 160 °C 0.72 V rT Tj = 160 °C 0.19 m IRD Tj = 160 °C, VRD = VRRM Rth(j-c) Rth(j-c) cont. sin. 180° 60 mA per chip 0.0385 K/W per module 0.0385 K/W per chip 0.04 K/W per module 0.04 K/W Module Rth(c-s) chip 0.01 K/W module 0.01 K/W Ms to heatsink M6 5.1 6.9 Nm Mt to terminal M12 15.3 20.7 Nm 5 * 9,81 m/s² a w 2150 g SKKE © by SEMIKRON Rev. 1 – 15.08.2012 1 SKKE 1200/18 H4 Fig. 11L: Power dissipation per diode vs. forward current Fig. 11R: Power dissipation per diode vs. ambient temperature Fig. 14: Transient thermal impedance vs. time Fig. 15: Forward characteristics Fig. 16: Surge overload current vs. time 2 Rev. 1 – 15.08.2012 © by SEMIKRON SKKE 1200/18 H4 SKKE SEMIPACK 6 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 15.08.2012 3