SENSITRON SEMICONDUCTOR SHD225512 TECHNICAL DATA DATA SHEET 1063, REV. B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.035 Ohm, 55A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to OM55N10SA MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT¬ VGS=10V, TC = 25°C VGS=10V, TC = 100°C PULSED DRAIN CURRENT@ TC = 25°C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25°C SYMBOL VGS ID MIN. - TYP. - IDM TOP/TSTG RθJC PD -55 - - MAX. ±20 55 33 180 +150 0.43 290 UNITS Volts Amps MAX. - UNITS Volts Amps °C °C/W Watts ELECTRICAL CHARACTERISTICS CHARACTERISTIC SYMBOL MIN. TYP. DRAIN TO SOURCE BREAKDOWN VOLTAGE BVDSS 100 VGS = 0V, ID = 250µA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 30 Adc RDS(ON) TC = 100°C VGS(th) 2.0 GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA FORWARD TRANSCONDUCTANCE gfs 25 VDS > ID (on), ID = 30 Adc ZERO GATE VOLTAGE DRAIN CURRENT VDS = Max. Rating, VGS = 0V IDSS VDS = Max. Rating x 0.8 VGS = 0V, TJ = 125°C GATE TO SOURCE LEAKAGE FORWARD VGS = -20V IGSS GATE TO SOURCE LEAKAGE REVERSE VGS = 20V TOTAL GATE CHARGE VGS = 10V, VDS = Max. Rating x 0.8, Qg 120 ID = 30A OFF VOLTAGE RISE TIME VDD = 80V, Tr(Voff) 200 FALL TIME ID = 30A, tf 210 tcross 410 CROSSOVER TIME RG = 50Ω, VGS = 10V VSD DIODE FORWARD VOLTAGE TJ = 25°C, ISD = 55A, VGS = 0V TJ = 125°C trr 180 DIODE REVERSE RECOVERY TIME TJ = 25°C, REVERSE RECOVERY CHARGE IS = 55A, diS/dt = -100A/µsec Qrr 1.8 VR = 80 V INPUT CAPACITANCE VGS = 0 V, Ciss 4000 OUTPUT CAPACITANCE VDS = 25 V, Coss 1100 REVERSE TRANSFER CAPACITANCE f = 1.0MHz Crss 250 ¬ Package Limited: ID = 25A @ 25°C - Pulse Test: Pulse width 300µs. Duty Cycle Ω 0.035 0.07 4.0 - Volts S(1/Ω) µA 250 1000 -100 100 - nA - nsec 1.5 Volts - nsec - µC pF nC 1.5% • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • SHD225512 SENSITRON DATA SHEET 1063 REVISION B MECHANICAL DIMENSIONS: in Inches / mm .149 (3.78 Dia. .139 3.53) .260 .249 .050 .040 .545 (13.84 .535 13.60) .800 (20.32 .790 20.07) .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) 1 (6.60 6.32) (1.27 1.02) .545 (13.84 .535 13.58) 2 3 .045 (1.14 .035 0.89) 3 Places .150(3.81) BSC .150(3.81) BSC 2 Places TO-254 DEVICE TYPE N-CHANNEL MOSFET TO-254 PACKAGE PIN-1 DRAIN PIN-2 SOURCE PIN-3 GATE SCEMATIC SYMBOL D N-CHANNEL G S • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •