OM6503SC OM6504SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened to MIL-S-19500, TX, TXV And S Levels DESCRIPTION The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6503SC OM6504SC IC (Cont.) @ 90°C, A 20 30 V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 SCHEMATIC Collector Tf (Typ.) ns 400 400 PD W 72 125 qJC °C/W 1.75 1.00 TJ °C 150 150 MECHANICAL OUTLINE .270 .240 .695 .685 .165 .155 .045 .035 .835 .815 .707 .697 Gate Emitter Pin 1: Collector Pin 2: Emitter Pin 3: Gate 1 C 2 E 3 G .550 .530 .092 MAX. .750 .500 .200 TYP. .005 .065 .055 .140 TYP. PACKAGE OPTIONS Note: IGBTs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information. 6 PIN SIP MOD PAK 4 11 R2 Supersedes 2 07 R1 3.1 - 141 3.1 PRELIMINARY DATA: OM6504SC IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 500 V(BR)CES Collector Emitter 500 V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Breakdown Voltage ICES VCE = 0 IC = 250 µA Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 V Breakdown Voltage ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V TC = 125°C IGES Gate Emitter Leakage ±100 nA Current VGE = ±20 V VGE(th) Gate Threshold Voltage TC = 125°C IGES Gate Emitter Leakage Current VCE = 0 V Parameter - ON VCE = 0 IC = 250 µA VCE = 0 V Parameter - ON 2.0 VCE(sat) Collector Emitter 4.0 3.0 V VCE = VGE, IC = 250 µA VGE(th) V VGE = 15 V, IC = 20 A VCE(sat) Collector Emitter Saturation Voltage TC = 25°C VCE(sat) Collector Emitter 2.8 3.0 V Saturation Voltage VGE = 15 V, IC = 20 A 2.0 4.0 3.0 V VCE = VGE, IC = 250 µA V VGE = 15 V, IC = 30 A V VGE = 15 V, IC = 30 A Saturation Voltage TC = 25°C VCE(sat) Collector Emitter 2.8 3.0 Saturation Voltage TC = 100°C Dynamic Gate Threshold Voltage TC = 125°C Dynamic gfs Forward Transductance Cies Input Capacitance Coes Output Capacitance 215 pF Cres Reverse Transfer Capacitance 115 pF 5.0 1700 S VCE = 20 V, IC = 20 A gfs Forward Transductance pF VGE = 0 Cies Input Capacitance 3500 VCE = 25 V Coes Output Capacitance 250 pF VCE = 25 V f = 1 mHz Cres Reverse Transfer Capacitance 50 pF f = 1 mHz VCC = 400 V, IC = 30 A 8.0 S VCE = 15 V, IC = 30 A pF VGE = 0 Switching-Resistive Load Switching-Resistive Load Td(on) Turn-On Time 60 nS VCC = 400 V, IC = 20 A Td(on) Turn-On Time 100 nS tr Rise Time 240 nS VGE = 15 V, Rg = 47 tr Rise Time 200 nS VGE = 15 V, Rg = 100 Td(off) Turn-Off Delay Time 1.0 µS Tj = 125°C tf Fall Time 2.0 µS Switching-Inductive Load tr(Volt) Off Voltage Rise Time .55 µS VCEclamp = 400 V, IC = 20 A tf Fall Time .60 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 1.2 µS L = 0.1 mH, Tj = 100°C Eoff Turn-Off Losses 3.0 mJ Switching-Inductive Load Td(off) Turn-Off Delay Time 1.0 nS tf Current Fall Time 3.0 µS VCEclamp = 400 V, IC = 30 A VGE = 15 V, Rg = 100 L = 0.1 mH, Tj = 125°C OM6503SC - OM6504SC 3.1 PRELIMINARY DATA: OM6503SC