OM6505SA OM6506SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Available Screened To MIL-S-19500, TX, TXV And S Levels Low Conductive Losses Ceramic Feedthroughs Available DESCRIPTION The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6505SA OM6506SA IC (Cont.) @ 90°C, A 15 20 V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 SCHEMATIC Tf (Typ.) ns 400 400 PD W 72 125 qJC °C/W 1.75 1.00 TJ °C 150 150 MECHANICAL OUTLINE Collector .545 .535 .144 DIA. .050 .040 .800 .790 .685 .665 1 C 2 E .550 .530 3 G PIN CONNECTION Gate Pin 1: Collector Pin 2: Emitter Pin 3: Gate .550 .510 .005 .045 .035 Emitter .150 TYP. .150 TYP. .260 .249 PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 143 3.1 PRELIMINARY DATA: OM6506SA IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 500 V(BR)CES Collector Emitter 500 V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Breakdown Voltage ICES VCE = 0 Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 V Breakdown Voltage IC = 250 µA ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V TC = 100°C TC = 125°C IGES Gate Emitter Leakage ±100 nA Current VGE = ±20 V Gate Threshold Voltage IGES Gate Emitter Leakage Current VCE = 0 V VCE = 0 V Parameter - ON Parameter - ON VGE(th) VCE = 0 IC = 250 µA 2.0 VCE(sat) Collector Emitter 4.0 3.0 V VCE = VGE, IC = 250 µA VGE(th) V VGE = 15 V, IC = 15 A VCE(sat) Collector Emitter Saturation Voltage 2.8 3.0 V Saturation Voltage VGE = 15 V, IC = 15 A 4.0 3.0 V VCE = VGE, IC = 250 µA V VGE = 15 V, IC = 20 A V VGE = 15 V, IC = 20 A TC = 25°C VCE(sat) Collector Emitter TC = 100°C Dynamic 2.0 Saturation Voltage TC = 25°C VCE(sat) Collector Emitter Gate Threshold Voltage 2.8 3.0 Saturation Voltage TC = 100°C Dynamic gfs Forward Transductance Cies Input Capacitance Coes Output Capacitance 215 Cres Reverse Transfer Capacitance 115 5.0 1700 S VCE = 20 V, IC = 15 A gfs Forward Transductance pF VGE = 0 Cies Input Capacitance 3500 pF VCE = 25 V Coes Output Capacitance 250 pF VCE = 25 V pF f = 1 mHz Cres Reverse Transfer Capacitance 50 pF f = 1 mHz VCC = 400 V, IC = 20 A Switching-Resistive Load 8.0 S VCE = 15 V, IC = 20 A pF VGE = 0 Switching-Resistive Load Td(on) Turn-On Time 60 nS VCC = 400 V, IC = 15 A Td(on) Turn-On Time 100 nS tr Rise Time 240 nS VGE = 15 V, Rg = 47 tr Rise Time 200 nS VGE = 15 V, Rg = 100 Td(off) Turn-Off Delay Time 1.0 µS Tj = 125°C tf Fall Time 2.0 µS Switching-Inductive Load tr(Volt) Off Voltage Rise Time .55 µS VCEclamp = 400 V, IC = 15 A tf Fall Time .60 µS VGE = 15 V, Rg = 100 tcross Cross-Over Time 1.2 µS L = 0.1 mH, Tj = 100°C Eoff Turn-Off Losses 3.0 mJ Switching-Inductive Load Td(off) Turn-Off Delay Time 1.0 nS VCEclamp = 400 V, IC = 20 A tr Current Fall Time 3.0 µS VGE = 15 V, Rg = 100 L = 0.1 mH, Tj = 125°C OM6505SA - OM6506SA 3.1 PRELIMINARY DATA: OM6505SA