95693

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Changes in accordance with NOR 5962-R001-99
98-10-8
R. Monnin
B
Change conditions for input leakage current an overvoltage leakage current in
table I. Editorial changes throughout. - lgt
99-02-24
R. Monnin
C
Make change to descriptive designator as specified in 1.2.4. - ro
99-04-28
R. Monnin
D
Make changes to access time and enable delay waveforms as specified under
figure 3. - ro
00-07-19
R. Monnin
E
Redraw. Update drawing to current requirements. - drw
10-11-09
Charles F. Saffle
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED
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PMIC N/A
PREPARED BY
Sandra Rooney
STANDARD
MICROCIRCUIT
DRAWING
CHECKED BY
Sandra Rooney
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
Michael A. Frye
DRAWING APPROVAL DATE
96-02-27
REVISION LEVEL
E
MICROCIRCUIT, LINEAR, RADIATION
HARDENED CMOS,
MULTIPLEXER/DEMULTIPLEXER WITH ACTIVE
OVERVOLTAGE PROTECTION, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-95693
1 OF 24
5962-E023-11
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
D
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
95693
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device types. The device types identify the circuit function as follows:
Device type
Generic number
01
HS546RH
02
HS547RH
Circuit function
Radiation hardened DI single 16-channel
MUX/DEMUX with active overvoltage protection
Radiation hardened DI differential 8-channel
MUX/DEMUX with active overvoltage protection
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows:
Outline letter
X
Descriptive designator
Terminals
Package style
GDIP1-T28 or CDIP2-T28
28
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95693
A
REVISION LEVEL
E
SHEET
2
1.3 Absolute maximum ratings. 1/
Supply voltage between +V and -V .............................................................
Supply voltage between +V and ground .......................................................
Supply voltage between -V and ground .......................................................
Digital input overvoltage
+VEN, +VA .................................................................................................
-VEN, -VA ...................................................................................................
Analog input overvoltage
+VS ...........................................................................................................
-VS ............................................................................................................
Continuous current, S or D
(pulsed at 1 ms, 10 percent duty cycle max) ............................................
Storage temperature range ..........................................................................
Maximum power dissipation at TA = 125C (PD) ...........................................
Thermal resistance, junction-to-case (JC)....................................................
Thermal resistance, junction-to-ambient (JA) ..............................................
Lead temperature (soldering, 10 seconds) ...................................................
Junction temperature (TJ) .............................................................................
+44 V
+22 V
-25 V
+VSUPPLY + 4 V
-VSUPPLY – 4 V
+VSUPPLY + 20 V
-VSUPPLY – 20 V
40 mA
-65C to +150C
1W
2/
18C/W
50C/W
+275C
+175C
1.4 Recommended operating conditions.
Operating supply voltage (VSUPPLY) .............................................................
Analog input voltage (VS) ..............................................................................
Logic low level (VAL) .....................................................................................
Logic high level (VAH)....................................................................................
Max RMS current, S or D .............................................................................
Ambient operating temperature range (TA) ...................................................
15 V
 VSUPPLY
0 V to +0.8 V
+4 V to +VSUPPLY
8 mA
-55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads (Si)/s) .................
Dose rate upset (20 ns pulse).......................................................................
Dose rate burnout .........................................................................................
Dose rate latch-up ........................................................................................
10 Krads (Si)
3/
3/
4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)
at the rate of 20 mW/C for case outline X.
3/ Values to be specified when testing is completed.
4/ Devices use dielectrically isolated (DI) technology and latch-up is not physically possible.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95693
A
REVISION LEVEL
E
SHEET
3
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth tables. The truth tables shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MILPRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95693
A
REVISION LEVEL
E
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Input leakage current 1/
Symbol
IIH
IIL
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VREF = OPEN, VEN = 4.0 V
unless otherwise specified
Measure inputs sequentially,
connect all unused inputs to
GND
IIH, IIL
Leakage current into the source
terminal of an “OFF” switch
1.0
-1.0
1.0
-1.0
1.0
-10
+10
2, 3
-50
+50
1
-50
+50
-10
+10
2, 3
-50
+50
1
-50
+50
1
1
VEN = 0.5 V,
M, D 2/
+ID(OFF)
VD = +10 V, VEN = 0.8 V,
All unused inputs = -10 V
VEN = 0.5 V
M, D 2/
-ID(OFF)
VD = -10 V, VEN = 0.8 V,
All unused inputs = +10 V
VEN = 0.5 V
M, D 2/
Unit
-1.0
1, 2, 3
+IS(OFF) VS = +10 V, VEN = 0.8 V,
All unused inputs = -10V,
VD = -10 V
VS = -10 V, VEN = 0.8 V,
All unused inputs = +10V,
VD = +10 V
Limits
Max
1
-IS(OFF)
Device
type
Min
M, D 2/
VEN = 0.5 V,
M, D 2/
Leakage current into the drain
terminal of an “OFF” switch
Group A
subgroups
01, 02
01, 02
01, 02
1
01, 02
-10
+10
2, 3
01
-300
+300
02
-200
+200
01
-300
+300
02
-200
+200
1
01, 02
-10
+10
2, 3
01
-300
+300
02
-200
+200
01
-300
+300
02
-200
+200
1
1
A
nA
nA
nA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95693
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REVISION LEVEL
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5
TABLE I. Electrical performance characteristics - continued.
Test
Leakage current from an “ON”
driver into the switch (drain)
Symbol
+ID(ON)
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VREF = OPEN, VEN = 4.0 V
unless otherwise specified
VD = +10 V, VS = +10 V,
All unused inputs = -10 V
VEN = 4.5 V
M, D 2/
-ID(ON)
VD = -10 V, VS = -10 V,
All unused inputs = +10 V
VEN = 4.5 V
M, D 2/
Overvoltage protected leakage
current into the drain terminal of
an “OFF” switch
VS = 33 V, VD = 0 V,
+ID(OFF) VEN = 0.8 V
OVER
-ID(OFF)
VS = -33 V, VD = 0 V,
VEN = 0.8 V
OVER
VEN = 0.5 V
M, D 2/
VOLTAGE
Positive supply current
+I
VA = 0 V
Negative supply current
-I
VA = 0 V
Unit
Min
Max
-10
+10
2, 3
01
-300
+300
02
-200
+200
01
-300
+300
02
-200
+200
1
01, 02
-10
+10
2, 3
01
-300
+300
02
-200
+200
01
-300
+300
02
-200
+200
01, 02
-2
+2
1
-5
+5
1, 2, 3
-2
+2
1
-5
+5
1
1
01, 02
1
1, 2, 3
VEN = 4.5 V
M, D 2/
Limits
01, 02
1, 2, 3
VEN = 4.5 V
M, D 2/
Device
type
1
1, 2, 3
VEN = 0.5 V
M, D 2/
VOLTAGE
Group A
subgroups
nA
nA
A
2.0
mA
2.0
01, 02
1
-1.0
mA
-1.0
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
E
SHEET
6
TABLE I. Electrical performance characteristics - continued.
Test
Standby positive supply current
Symbol
+ISBY
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VREF = OPEN, VEN = 4.0 V
unless otherwise specified
VA =0 V, VEN = 0 V
-ISBY
+RDS1
VA =0 V, VEN = 0 V
1, 2, 3
VS = 10 V, ID = -100 A
1
VS = -10 V, ID = +100 A
Difference in switch “ON”
resistance between channels
+RDS1
((+RDS1MAX) –
(+RDS1MIN) x 100)
+RDS1AVE
-RDS1
((-RDS1MAX) –
(-RDS1MIN) x 100)
-RDS1AVE
2.0
01, 02
mA
-1.0
mA
-1.0
01, 02
1800
01, 02
1800
1
1800
1

1500
2, 3
01, 02

1500
1
1
VEN = 4.5 V
M, D 2/
Max
1800
1
VEN = 4.5 V
M, D 2/
Unit
2, 3
1
VEN = 4.5 V
M, D 2/
Limits
2.0
1
VEN = 4.5 V
M, D 2/
-RDS1
01, 02
1
M, D 2/
Switch “ON” resistance
Device
type
Min
1, 2, 3
M, D 2/
Standby negative supply current
Group A
subgroups
7
%
7
01, 02
1
7
%
7
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - continued.
Test
Logic level voltage
Symbol
VAL1
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VREF = OPEN, VEN = 4.0 V
unless otherwise specified
3/, 4/
VAH1
VEN = 4.5 V
M, D 2/
VEN = 4.5 V
M, D 2/
VAH2
VEN = 4.5 V
M, D 2/
Limits
01, 02
Unit
Max
0.8
1
V
0.5
1, 2, 3
4.0
1
4.5
1, 2, 3
5/
Device
type
Min
1, 2, 3
VEN = 4.5 V
M, D 2/
VAL2
Group A
subgroups
01, 02
0.8
1
V
0.5
1, 2, 3
6.0
1
6.5
Capacitance : Address
CA
V+ = V- = 0 V, F = 1 MHz,
TA = +25C, See 4.4.1d 6/
4
01, 02
12
pF
Capacitance : Output switch
COS
V+ = V- = 0 V, F = 1 MHz,
TA = +25C, See 4.4.1d 6/
4
01
85
pF
02
50
Capacitance : Input switch
CIS
V+ = V- = 0 V, F = 1 MHz,
TA = +25C, See 4.4.1d 6/
4
01, 02
15
pF
10
mV
Charge transfer error
VCTE
VS = GND, TA = +25C,
VEN = 0 V to 5 V 6/
4
01, 02
Off isolation
VISO
VEN = 0.8 V, RL = 1 k,
CL = 15 pF, VS = 7 Vrms,
F = 100 kHz, TA = +25C 6/, 7/
4
01, 02
-50
dB
See footnotes at end of table.
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DSCC FORM 2234
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REVISION LEVEL
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
-55C  TA +125C
-V = -15 V, +V = +15 V
VREF = OPEN, VEN = 4.0 V
unless otherwise specified
Group A
subgroups
Device
type
Min
Functional test
FT
TA = +25C, See 4.4.1b
7, 8
01, 02
Break-before-make time delay
tD
RL = 1 k, See figure 3
9
01, 02
M, D 2/
Propagation delay times :
Address inputs to I/O channels
times :
tA
M, D 2/
TON(EN)
Enable to I/O
TOFF(EN) RL = 1 k, See figure 3
5
Max
ns
500
10, 11
1000
9
1000
01, 02
1000
9
1000
01, 02
ns
500
10, 11
9
M, D 2/
3/
4/
5/
6/
7/
9
9
RL = 1 k, See figure 3
M, D 2/
1/
2/
5
01, 02
Unit
25
10, 11
9
RL = 10 k, See figure 3
Limits
ns
500
10, 11
1000
9
1000
ns
Input current of one input mode.
Devices supplied to this drawing meet levels M and D of irradiation. However, these devices are only tested at the D level.
Pre and post irradiation values are identical unless otherwise specified in Table I.
Used for forcing conditions for all DC tests, unless otherwise specified.
To drive from DTL/TTL circuits, 1k pull-up resistors to +5.0 V supply recommended.
VREF = +10 V.
Guaranteed, if not tested, to the limits as specified.
Worst case isolation occurs on channel 8B due to proximity of the output pins.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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REVISION LEVEL
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Case outline
Device type
Terminal number
X
01
02
Terminal symbol
1
V+
V+
2
NC
OUT B
3
NC
NC
4
IN 16
IN 8B
5
IN 15
IN 7B
6
IN 14
IN 6B
7
IN 13
IN 5B
8
IN 12
IN 4B
9
IN 11
IN3B
10
IN 10
IN 2B
11
IN 9
IN 1B
12
GND
GND
13
VREF
VREF
14
A3
NC
15
A2
A2
16
A1
A1
17
A0
A0
18
ENABLE
ENABLE
19
IN 1
IN 1A
20
IN 2
IN 2A
21
IN 3
IN 3A
22
IN 4
IN 4A
23
IN 5
IN 5A
24
IN 6
IN 6A
25
IN 7
IN 7A
26
IN 8
IN 8A
27
V-
V-
28
OUT
OUT A
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
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Device type 01
Device type 02
A3
A2
A1
A0
EN
“ON”
CHANNEL
A2
A1
A0
EN
X
L
X
L
X
L
X
L
L
H
NONE
1
X
L
X
L
X
L
L
H
“ON”
CHANNEL
PAIR
NONE
1
L
L
L
L
L
L
L
H
H
H
L
H
H
H
H
2
3
4
L
L
L
L
H
H
H
L
H
H
H
H
2
3
4
L
H
L
L
H
5
H
L
L
H
5
L
L
H
H
L
H
H
L
H
H
6
7
H
H
L
H
H
L
H
H
6
7
L
H
H
H
H
8
H
H
H
H
8
H
L
L
L
H
9
H
H
H
L
L
L
L
H
H
H
L
H
H
H
H
10
11
12
H
H
L
L
H
13
H
H
H
H
L
H
H
L
H
H
14
15
H
H
H
H
H
16
FIGURE 2. Truth tables.
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FIGURE 3. Timing diagrams.
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FIGURE 3. Timing diagrams - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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FIGURE 3. Timing diagrams - continued.
STANDARD
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3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 82 (see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
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SIZE
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REVISION LEVEL
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4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,
subgroups 7 and 8 shall include verifying the functionality of the device.
c.
Subgroups 5, 6, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
d.
Subgroup 4 (CA, CIS, and COS, measurements) should be measured only for initial qualification and after any process
or design changes which may affect input or output capacitance.
TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
1, 7, 9
1, 7, 9
1, 7, 9
1, 2, 3, 7, 8, 9, 10, 11
1/
1, 2, 3, 7, 8, 9,
10, 11 1/
1, 2, 3, 7, 8, 9,
10, 11 1/, 2/
1, 2, 3, 4, 7, 8, 9, 10,
11 3/
1, 2, 3, 4, 7, 8,
9, 10, 11 3/
1, 2, 3, 4, 7, 8,
9, 10, 11 3/
1, 2, 3, 7, 8, 9, 10, 11
1, 2, 3, 7, 8, 9,
10, 11
1, 2, 3, 7, 8, 9,
10, 11
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9
1/ PDA applies to subgroup 1. For class V to subgroups 1 and .
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed with
reference to the zero hour electrical parameters (see table I).
3/ Subgroup 4, if not tested, shall be guaranteed to the limits specified in table I.
TABLE IIB. Burn-in delta parameters (+25C) and group C delta parameters.
Parameters
Leakage current into the source terminal
of an “OFF” switch
Leakage current into the drain terminal of
an “OFF” switch
Leakage current from an “ON” driver into
the switch (drain and source)
Switch on resistance
Positive supply current
Negative supply current
Positive standby supply current
Negative standby supply current
Input leakage current
Address or Enable pins
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Symbol
Delta limits
IS(OFF)
10 nA
ID(OFF)
10 nA
ID(ON)
10 V RDS
I+
I+ISBY
-ISBY
IAL, IAH
10 nA
150 
200 A
100 A
200 A
100 A
100 nA
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TABLE III. Irradiation test conditions. (TA = +25C 5C, VSUPPLY = +15 V 5%, -VSUPPLY = -15 V 5%)
Test
Radiation exposure
Open
3
Ground
2, 12, 18,
28 1/
V+
1
V27
+1 V  5%
4, 5, 6, 7, 8, 9, 10,
11, 19, 20, 21, 22,
23, 24, 25, 26
+5 V  5%
13, 14, 15,
16, 17
1/ Pins 2 and 28 will have a series resistor (RS) = 10 k 5%
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535 and the end-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A and as specified herein.
4.4.4.1.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be
the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after
any design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see 1.5 herein). Tests shall be performed on devices, SEC, or approved
test structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
STANDARD
MICROCIRCUIT DRAWING
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SIZE
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REVISION LEVEL
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4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1023 of
MIL-STD-883 and herein (see 1.5).
a.
Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535.
4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0547.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
MICROCIRCUIT DRAWING
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
D
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
95693
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device types. The device types identify the circuit function as follows:
Device type
Generic number
01
HS546RH
02
HS547RH
Circuit function
Radiation hardened DI single 16-channel
MUX/DEMUX with overvoltage protection.
Radiation hardened, DI differential 8-channel
MUX/DEMUX with active overvoltage protection.
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
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Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02
A-1
A-2
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02
A-1
A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1 and A2.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1 and A2.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1 and A2.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1
and A2.
A.3.2.5 Truth tables. The truth tables shall be as defined in paragraph 3.2.3 herein.
A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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SIZE
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1,
4.4.4.1.1, 4.4.4.2, 4.4.4.3 and 4.4.4.4 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 432183990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
Die bonding pad locations and electrical functions
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see figure 1).
Die physical dimensions.
Die size: 2130 X 4030 microns.
Die thickness: 20 +/-1 mils.
Interface materials.
Top metallization: CuAl 15.0 kÅ - 17.0 kÅ
Backside metallization: None or Gold backed.
Glassivation.
Type: Nitride.
Thickness: 7.0 kÅ +/- 0.7 kÅ.
Substrate: Dielectrically Isolated (DI).
Assembly related information.
Substrate potential: Insulator.
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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SIZE
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REVISION LEVEL
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95693
Die bonding pad locations and electrical functions
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see figure 1).
Die physical dimensions.
Die size: 2130 X 4030 microns.
Die thickness: 20 +/-1 mils.
Interface materials.
Top metallization: CuAl 15.0 kÅ - 17.0 kÅ
Backside metallization: None or Gold backed.
Glassivation.
Type: Nitride.
Thickness: 7.0 kÅ +/- 0.7 kÅ.
Substrate: Dielectrically Isolated (DI).
Assembly related information.
Substrate potential: Insulator.
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 10-11-09
Approved sources of supply for SMD 5962-95693 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962D9569301VXA
3/
HS1-0546RH-Q
5962D9569301VXC
34371
HS1B-0546RH-Q
5962D9569301V9A
34371
HS0-0546RH-Q
5962D9569302VXA
3/
HS1-0547RH-Q
5962D9569302VXC
34371
HS1B-0547RH-Q
5962D9569302V9A
34371
HS0-0547RH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source. The last known supplier is listed below.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.