13211

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add device types 03, 04, and Appendix A. Make change to description title
block by adding the word “BIPOLAR”. Delete Accelerated annealing test
paragraph 4.4.4.1.1. - ro
14-07-09
C. SAFFLE
B
Make changes to Table IIB. - ro
15-02-18
C. SAFFLE
REV
SHEET
REV
B
B
B
B
B
B
B
SHEET
15
16
17
18
19
20
21
REV STATUS
REV
B
B
B
B
B
B
B
B
B
B
B
B
B
B
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
13-12-17
REVISION LEVEL
B
MICROCIRCUIT, LINEAR, BIPOLAR, ULTRA LOW
NOISE, PRECISION VOLTAGE REFERENCE,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-13211
1 OF 21
5962-E147-15
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
13211
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Voltage reference output
01
ISL71090SEH-12
1.25 V
02
ISL71090SEH-25
2.5 V
03
ISL71090SEH-50
5.0 V
04
ISL71090SEH-75
7.5 V
Circuit function
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
Terminals
Package style
See figure 1
8
Dual flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
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A
REVISION LEVEL
B
SHEET
2
1.3 Absolute maximum ratings. 1/
Maximum voltage:
VIN to GND ..................................................................................................... -0.5 V to +40 V
2
VIN to GND at an LET = 86 MeV/mg/cm
...................................................... -0.5 V to +36 V
VOUT to GND (10 seconds) ............................................................................ -0.5 V to VOUT + 0.5 V
Voltage on any pin to ground ..............................................................................
Voltage on DNC pins ..........................................................................................
Input voltage slew rate (maximum) .....................................................................
Maximum junction temperature (TJMAX) ............................................................
-0.5 V to +VOUT + 0.5 V
No connections permitted to these pins
0.1 V/s
150C
Continuous power dissipation (PD) :
TA = +125C ................................................................................................... 178 mW
TA = +25C ..................................................................................................... 892 mW
Storage temperature range (TSTG) .................................................................... -65C to +150C
Thermal resistance, junction to case (JC) ......................................................... 15C/W 2/
Thermal resistance, junction to ambient (JA) .................................................... 140C/W 3/
1.4 Recommended operating conditions.
Input voltage (VIN):
Device types 01 and 02 .................................................................................. 4 V to +30 V
Device type 03 ................................................................................................ 7 V to +30 V
Device type 04 ................................................................................................ 9.2 V to +30 V
Operating free-air temperature range (TA) ......................................................... -55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) :
Device types 01, 02, 03 and 04 ...................................................................... 100 krads(Si) 4/
Maximum total dose available (dose rate  .010 rad(Si)/s):
Device types 01, 02, 03 and 04 ...................................................................... 50 krads(Si) 4/
Single event phenomenon (SEP):
2
No Single event latchup (SEL) occurs at effective LET (see 4.4.4.2) ............. ≤ 86 MeV/mg/cm 5/
2
No Single event burnout (SEB) occurs at effective LET (see 4.4.4.2) ............ ≤ 86 MeV/mg/cm
Single event transients (SET) observed at LET (see 4.4.4.2) ........................ 86 MeV/mg/cm
(Resulted recovery time not exceeding 50s at saturated cross section = 1.48 x 10
-4
2
2
5/
5/
cm )
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ For JC, the “case temperature” location is the center of the ceramic on the package underside.
3/
4/
5/
JA is measured with the component mounted on a high effective thermal conductivity test board in free air.
Device types 01, 02, 03, and 04 radiation end point limits for the noted parameters are guaranteed only for the conditions
as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
Limits are characterized at initial qualification and after any design or process changes which may affect the SEP
characteristics but are not production tested unless specified by the customer through the purchase order or contract.
See manufacturer’s SEE test report and table IB for more information.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) from Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
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DSCC FORM 2234
APR 97
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A
REVISION LEVEL
B
SHEET
4
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer’s PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML” or “Q” as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
B
SHEET
5
TABLE IA. Electrical performance characteristics.
Test
VOUT accuracy
3/
Symbol
VOA
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
VOUT = 1.252 V
M,D,P,L,R
M,D,P,L,R
M,D,P,L,R
M,D,P,L,R
Input voltage range 5/
VIN
Supply current
1
01
-0.05
+0.05
2,3
-0.15
+0.15
1
-0.15
+0.15
-0.05
+0.05
2,3
-0.15
+0.15
1
-0.175
+0.175
-0.05
+0.05
2,3
-0.15
+0.15
1
-0.3
+0.3
-0.05
+0.05
2,3
-0.15
+0.15
1
+0.3
+0.3
02
03
04
1,2,3
01, 02,
03, 04
1,2,3
01
VOUT = 2.5 V
Unit
%
10
ppm/C
4.0
30
V
02
4.0
30
VOUT = 5.005 V
03
7.0
30
VOUT = 7.5 V
04
9.2
30
VOUT = 1.252 V
IIN
Line regulation
Max
1
VOUT = 7.5 V
TCVOUT
Min
1
VOUT = 5.005 V
Output voltage temperature 4/
coefficient
Device
type
1
VOUT = 2.5 V
Limits
Group A
subgroups
1,2,3
VOUT/
VIN = 4.0 V to 30 V,
VIN
VOUT = 1.252 V
1,2,3
VIN = 4.0 V to 30 V,
01, 02
1.28
03, 04
1.5
01
18
02
18
03
20
04
20
mA
ppm/V
VOUT = 2.5 V
VIN = 7.0 V to 30 V,
VOUT = 5.005 V
VIN = 9.2 V to 30 V,
VOUT = 7.5 V
See footnotes at end of table.
STANDARD
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
B
SHEET
6
TABLE IA. Electrical performance characteristics – Continued.
Test
Load regulation
Symbol
VOUT/
IOUT
Group A
subgroups
Conditions 1/ 2/
-55C  TA +125C
unless otherwise specified
1/
VD
Limits
Min
Sourcing:
1,2,3
Unit
Max
01
55
02
35
03
20
04
20
02
70
03
40
04
40
01
2.25
VOUT = 2.5 V at 10 mA
02
1.7
VOUT = 5.005 V at 10 mA
03
1.7
VOUT = 7.5 V at 10 mA
04
1.7
0 mA  IOUT  20 mA
Sinking: -10 mA  IOUT  0 mA
Dropout voltage 6/
Device
type
1,2,3
VOUT = 1.252 V at 10 mA
ppm/mA
V
Unless otherwise specified, VIN = 5 V and IOUT = 0 for device types 01 and 02, VIN = 10 V and IOUT = 0 for device type 03,
and VIN = 15 V and IOUT = 0 for device type 04. CL = 0.1 F and CC = 1 nF for device types 01, 02, 03, and 04.
2/
RHA device types 01, 02, 03 and 04 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for
condition A and levels M, D, P, and L for condition D. However, device types 01, 02, 03, and 04 are only tested at the
R level in accordance with MIL-STD-883, method 1019, condition A and tested at the L level in accordance with
MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and Post irradiation values are identical unless otherwise
specified in Table IA. When performing post irradiation electrical measurements for any RHA level, TA = +25C.
3/
Post reflow drift can be normally 100 V based on experimental results with devices on FR4 double sided boards.
The customer must take this into account when considering the reference voltage after assembly.
4/
Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in
VOUT is divided by the temperature range; in this case, -55C to +125C = +180C. This parameter is guaranteed but not
tested. This parameter is characterized upon initial design or process changes which affect this characteristic.
5/
VIN – VOUT measured at the point where VOUT drops 1 mV from the nominal measured value.
6/
Dropout voltage is the minimum VIN – VOUT differential voltage measured at the point where VOUT drops 1 mV from
VIN = nominal at TA = +25C.
STANDARD
MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
B
SHEET
7
TABLE IB. SEP test limits. 1/ 2/ 3/
Device
types
SEP
Temperature (TA)
Effective linear energy transfer
(LET)
01, 02,
No SEL
+125C
≤ 86 MeV/mg/cm
No SEB
+125C
≤ 86 MeV/mg/cm
SET Observed 4/
+25C
86 MeV/mg/cm
2
03, 04
2
2
1/ For single event phenomena (SEP) test conditions, see 4.4.4.2 herein.
2/ Technology characterization and model verification supplemented by in-line data
may be used in lieu of end of line testing. Test plan must be approved by the technical
review board and qualifying activity.
3/ Limits are characterized at initial qualification and after any design or process changes
which may affect the SEP characteristics but are not production tested unless specified
by the customer through the purchase order or contract. See manufacturer’s SEE test
report for more information.
4/ Single event transients (SET) observed that resulted in a recovery time not exceeding 50 s at
-4
2
2
saturated cross section = 1.48 x 10 cm with effective LET= 86 MeV/mg/cm .
See manufacturer’s SEE test report for more information.
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Case X.
FIGURE 1. Case outline.
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9
Case X – continued.
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
A
0.087
0.110
2.21
2.79
b
0.015
0.022
0.38
0.56
b1
0.015
0.019
0.38
0.48
c
0.004
0.009
0.10
0.23
c1
0.004
0.007
0.10
0.18
D
0.245
0.265
6.22
6.73
E
0.245
0.265
6.22
6.73
E2
0.170
0.180
4.32
4.57
E3
0.030
---
0.76
---
7
3
e
0.050 BSC
1.27 BSC
k
0.008
0.015
0.20
0.38
L
0.325
0.370
8.26
9.40
Q
0.026
0.036
0.66
0.92
8
S1
0.005
---
0.13
---
6
M
---
0.0015
---
0.04
N
8
8
NOTES:
1. The U.S. government preferred system of measurement is the metric SI system. However, since this item
was originally designed using inch-pound units of measurement, in the event of conflict between the metric
and inch-pound units, the inch-pound units shall take precedence.
2. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located
within the shaded area shown. Alternately, a tab (dimension k) may be used to identify pin one.
3. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness.
The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead
surfaces, when solder dip or tin plate lead finish is applied.
5. N is the maximum number or terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the
package to cover the leads.
8. Dimension Q shall be measured at the point of exit (beyond the meniscus) of the lead from the body.
Dimension Q minimum shall be reduced by 0.0015 inch (0.038 mm) maximum when solder dip lead finish is applied.
FIGURE 1. Case outline – Continued.
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REVISION LEVEL
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Device types
01, 02, 03, and 04
Case outline
X
Terminal number
Terminal
symbol
1
DNC
2
VIN
3
COMP
4
GND
Ground connection.
5
TRIM
Voltage reference trim input.
6
VOUT
Voltage reference output.
7
DNC
Do not connect.
8
DNC
Do not connect.
Package lid
Description
Do not connect.
Input voltage connection.
Compensation and noise reduction capacitor.
Package lid is internally connected to pin 4 (GND).
FIGURE 2. Terminal connections.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection.
4.2.1
Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer’s QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer’s Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein.
4.4.1
Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer’s QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer’s TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
STANDARD
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REVISION LEVEL
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TABLE IIA. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
Device
class Q
class V
1
1,2,3 1/
1,2,3 1/ 2/
1,2,3
1,2,3
1,2,3
1,2,3 2/
1
1
1
1
1/ PDA applies to subgroup 1 for device class Q and subgroup 1 and  for
device class V.
2/ Delta limits as specified in table IIB shall be required where specified,
and the delta limits shall be completed with reference to the zero
hour electrical parameters (see table IA).
TABLE IIB. Burn-in and life test delta parameters. (TA = +25C). 1/
Parameters
VOUT accuracy
Supply current
Symbol
Device
type
Min
Max
Units
VOA
01
-1.00
1.00
mV
02
-1.25
1.25
03
-2.50
2.50
04
-3.75
3.75
01, 02,
03, 04
-100
100
IIN
A
1/ Deltas are performed at room temperature.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table IIA herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point
electrical parameter limits as defined in table IA at TA = +25C 5C, after exposure, to the subgroups specified in
table IIA herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
13
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein. In addition, a low dose rate test shall be performed in accordance with
MIL-STD-883 method 1019, condition D and as specified herein.
4.4.4.2 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The recommended test conditions for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive
(i.e. 0  angle  60). No shadowing of the ion beam due to fixturing or package related affects is allowed.
b.
The fluence shall be  100 errors or  10 ions/cm .
c.
The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be  20 micron in silicon.
e.
The test temperature shall be +25C 10% for SET. The test temperature shall be +125C 10% for SEB and SEL.
f.
Bias conditions shall be VIN = 36 V maximum for the latchup measurements.
g.
For SEL, SEB, and SET test limits, see table IB herein.
7
2
5
2
2
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD’s. All proposed changes to existing SMD’s will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD’s are applicable to that system. DLA Land and Maritime will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
14
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from
the device manufacturer:
A.
RHA upset levels.
b. Test conditions (SEP).
c. Number of burnouts (SEB).
d. Number of transients (SET).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
13211
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Voltage reference output
01
ISL71090SEH-12
1.25 V
02
ISL71090SEH-25
2.5 V
03
ISL71090SEH-50
5.0 V
04
ISL71090SEH-75
7.5 V
Circuit function
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
Radiation hardened ultra low noise,
precision voltage reference
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
A.1.2.4 Die details. The die details designation is a unique letter which designates the die’s physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 02, 03, 04
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 02, 03, 04
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 02, 03, 04
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 02, 03, 04
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
17
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
18
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime –VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, and 4.4.4.2 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime –VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to
DLA Land and Maritime –VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
19
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
See note 1 and Table III
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
20
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-13211
TABLE III. Die plot.
Pad name
Pad number
X
(m)
Y
(m)
Bond wires
per pad
GND QUIET
1
0
0
1
GND PWR
2
-104
0
1
COMP
3
-108
589
1
VS
4
-125
1350
1
DNC
5
-108
1452
1
DNC
6
1089
1452
1
DNC
7
1089
1350
1
VOUT SENSE
8
1072
598
1
VOUT FORCE
9
1088
1
1
TRIM
10
985
-25
1
NOTES:
1. Origin of coordinates is the centroid of GND QUIET.
2. Bond wire size is 1.0 mil.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 1464 m x 1744 m (58 mils x 69 mils)
Die thickness: 483 m  25.4 m (19.0 mils  1 mil)
Interface materials.
Top metallization: AlCu (99.5%/0.5%)
Thickness: 30 kÅ
Backside metallization: None - Silicon
Glassivation.
Type: Nitrox
Thickness: 15 kÅ
Substrate: PR40: Bonded wafer dielectrically isolated complementary bipolar
Assembly related information.
Substrate potential: Floating
Special assembly instructions:
GND QUIET (pad 1) and GND PWR (pad 2) must both be connected/bonded to GND.
VOUT SENSE (pad 8) and VOUT FORCE (pad 9) must both be connected/bonded to VOUT .
FIGURE A-1. Die bonding pad locations and electrical functions - continued.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-13211
A
REVISION LEVEL
B
SHEET
21
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 15-02-18
Approved sources of supply for SMD 5962-13211 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R1321101VXC
34371
ISL71090SEHVF12
5962R1321102VXC
34371
ISL71090SEHVF25
5962R1321103VXC
34371
ISL71090SEHVF50
5962R1321104VXC
34371
ISL71090SEHVF75
5962R1321101V9A
34371
ISL71090SEHVX12
5962R1321102V9A
34371
ISL71090SEHVX25
5962R1321103V9A
34371
ISL71090SEHVX50
5962R1321104V9A
34371
ISL71090SEHVX75
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.