96755

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add Appendix A for microcircuit die. - ro
98-05-29
R. MONNIN
B
Make changes to boilerplate to add class T devices. - ro
98-12-03
R. MONNIN
C
Make changes to AE and BPOE delta limits as specified in table IIB. - ro
02-01-08
R. MONNIN
D
Add device type 02. - ro
02-12-19
R. MONNIN
E
Make corrections to Utempo, Btempo, and Gtempo tests unit column as specified
under Table I. Delete IIO from Table IIB. Add a new footnote under 1.5 and
Table I. Delete latch up under 1.5 and 4.4.4.2. - ro
05-04-25
R. MONNIN
F
Add device type 03. Delete dose rate burnout paragraph.
Make changes to paragraphs 1.2.2, 1.5, 4.4.4.1, A.1.2.2, A.1.2.4, Table I, and
figure 1. Add paragraph A.1.5. - ro
12-03-15
C. SAFFLE
REV
SHEET
REV
F
F
F
F
F
F
F
F
SHEET
15
16
17
18
19
20
21
22
REV STATUS
REV
F
F
F
F
F
F
F
F
F
F
F
F
F
F
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
DAN WONNELL
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
SANDRA ROONEY
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
96-02-05
REVISION LEVEL
F
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION
HARDENED, HIGH SPEED, 12-BIT
D/A CONVERTER, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-96755
1 OF 22
5962-E017-12
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and
M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case
outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of
Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
96755
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-565ARH
02
HS-565BRH
03
HS-565BEH
Circuit function
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q, V
Certification and qualification to MIL-PRF-38535
T
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
J
X
Descriptive designator
Terminals
CDIP2-T24
CDFP4-F24
24
24
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Package style
Dual-in-line
Flat pack
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
2
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
VCC to power ground .................................................................................................
VEE to power ground .................................................................................................
Voltage on DAC output on IDAC pin ..........................................................................
Digital input (BIT 12 IN – BIT 1 IN pins) to power ground ..........................................
REF IN to REF GND ..................................................................................................
Bipolar offset to REF GND .........................................................................................
10 V SPAN R to REF GND ........................................................................................
20 V SPAN R to REF GND ........................................................................................
Maximum package power dissipation (TA = +125°C): 2/
Case outline J ..........................................................................................................
Case outline X .........................................................................................................
Junction temperature (TJ) ..........................................................................................
Storage temperature range ........................................................................................
Lead temperature (soldering, 10 seconds) ................................................................
Thermal resistance, junction-to-case (θJC):
Case outline J ..........................................................................................................
Case outline X .........................................................................................................
Thermal resistance, junction-to-ambient (θJA):
Case outline J ..........................................................................................................
Case outline X .........................................................................................................
0 V to +18 V
0 V to -18 V
-3 V to +12 V
-1 V to +7 V
±12 V
±12 V
±12 V
±24 V
0.83 W
0.62 W
+175°C
-65°C to +150°C
+300°C
17°C/W
15°C/W
60°C/W
80°C/W
1.4 Recommended operating conditions.
Positive supply voltage range (VCC) ..........................................................................
Negative supply voltage range (VEE) ........................................................................
Digital input low voltage range ...................................................................................
Digital input high voltage range .................................................................................
Ambient operating temperature range (TA) ...............................................................
+11.4 V to +16.5 V
-11.4 V to -16.5 V
0 V to +0.8 V
+2.0 V to +5.5 V
-55°C to +125°C
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ If the power exceeds package dissipation capability, provide heat sinking or derate linearity at the following rate
(the derating is based on θJA): case outline J use 16.67 mW/°C and case outline X use 12.5 mW/°C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
3
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device types 01 and 02 .......................................................................................... 100 krads(Si) 3/
Device type 03 ....................................................................................................... 100 krads(Si) 4/
Maximum total dose available (dose rate ≤ 0.01 rads(Si)/s):
Device type 03 ....................................................................................................... 50 krads(Si) 4/
The manufacturer supplying RHA device types 01, 02, and 03 on this drawing has performed characterization testing to
demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883,
method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a level of 50 krads(Si).
The manufacturer will perform only high dose rate lot acceptance testing on a wafer by wafer basis in accordance with
MIL-STD-883, method 1019, condition A for device types 01 and 02. The manufacturer will perform high dose rate and low
dose rate lot acceptance testing on a wafer by wafer basis in accordance with MIL-STD-883, method 1019, conditions A and D
for device type 03.
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
____
3/ The manufacturer supplying device types 01 and 02 has performed characterization testing in accordance with
MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at
a level of 50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si).
4/
The manufacturer supplying device type 03 has performed characterization testing in accordance with MIL-STD-883
method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a level of
50 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified
in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total
dose of 50 krads(Si).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
4
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Calibration diagrams. The calibration diagrams shall be as specified on figures 2, 3, and 4.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall
be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 56 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Conditions 1/
-55°C ≤ TA ≤ +125°C
Symbol
Group A
subgroups
VCC = +15 V, VEE = -15 V
Device
type
Limits
Min
VSSD = VSSA = 0 V
Unit
Max
unless otherwise specified
Resolution
ILE
Accuracy
Error relative to full scale
M,D,P,L,R
1,2,3
All
12
Bits
1,2,3
All
±0.75
LSB
1
All
±1.0
+1.0
Digital input high current
IIH
VIN = 5.5 V
1,2,3
All
Digital input low current
IIL
VIN = 0 V
1,2,3
All
-20
1
All
-40
1,2,3
All
2.0
1
All
2.5
1,2,3
All
0.8
1
All
0.5
1,2,3
All
±0.50
1
All
±1.0
+11.8
M,D,P,L,R
Digital input high voltage
VIH
2/
M,D,P,L,R
Digital input low voltage
VIL
2/
M,D,P,L,R
Differential nonlinearity
DLE
Monotonicity guaranteed
M,D,P,L,R
µA
µA
V
V
LSB
Positive supply current
ICC
1,2,3
All
Negative supply current
IEE
1,2,3
All
-14.5
Reference output voltage
REF
OUT
1,2,3
All
9.9
Reference output current
IREF
Available for external loads
1,2,3
All
1.5
Output current unipolar
IOUT1
All bits on
1,2,3
All
-1.6
-2.4
mA
Output current bipolar
IOUT2
All bits on or off
1,2,3
All
±0.8
±1.2
mA
Output offset error unipolar
VOS
R2 = 50 Ω fixed,
see figure 2
1,2,3
All
±0.05
% of
F.S.
Output offset error bipolar
BPOE
R3, R4 = 50 Ω fixed,
1,2,3
01
±0.15
% of
F.S.
1
02, 03
±0.15
see figure 3
1
mA
10.1
V
mA
±0.18
2,3
M,D,P,L,R
mA
±0.25
All
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55°C ≤ TA ≤ +125°C
Symbol
Group A
subgroups
VCC = +15 V, VEE = -15 V
Device
type
Limits
Min
VSSD = VSSA = 0 V
Unit
Max
unless otherwise specified
Power supply gain 3/
sensitivity
+PSS
1,2,3
All
-PSS
Temperature coefficient 4/
unipolar zero
Temperature coefficient 4/
bipolar zero
Temperature coefficient 4/
gain (full scale)
Full scale error unipolar
Utempo
Btempo
Gtempo
AE
With internal reference
1,2,3
With internal reference
1,2,3
All
ppm of
All
FSR / °C
ppm of
20
FSR / °C
ppm of
All
50
R2 = 50 Ω fixed,
1,2,3
01
±0.25
1
02, 03
±0.25
R3, R4 = 50 Ω fixed,
see figure 3
M,D,P,L,R
R3, R4 = 50 Ω fixed,
see figure 3
1
All
±0.85
1,2,3
01
±0.25
1
02, 03
±0.25
% of F.S.
% of F.S.
±0.4
1
All
±0.85
1,2,3
01
±0.10
1
02, 03
±0.10
% of F.S.
±0.18
2,3
M,D,P,L,R
FSR / °C
±0.4
2,3
BPZE
ppm of FS
%∆VEE
1,2,3
M,D,P,L,R
Zero error bipolar
25
2
2,3
BPAE
ppm of FS
%∆VCC
With internal reference
see figure 2
Full scale error bipolar
10
1
All
±0.25
Output compliance voltage
VOC
5/
1,2,3
All
-1.5
10
V
Programmable output
voltage range
VOR
See figures 2, 3, and 4 5/
1,2,3
All
0
5
V
-2.5
2.5
0
10
-5
5
-10
10
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
7
TABLE I. Electrical performance characteristics - Continued.
Test
Conditions 1/
-55°C ≤ TA ≤ +125°C
Symbol
Group A
subgroups
VCC = +15 V, VEE = -15 V
Device
type
Limits
Min
VSSD = VSSA = 0 V
Gain adjustment range
Bipolar zero adjustment
range
Reference input
impedance
Output resistance
Settling time
Full scale transition rise
time
Full scale transition fall
time
1/
Unit
Max
GADJ
unless otherwise specified
5/
1,2,3
All
±0.25
% of F.S.
BZADJ
5/
1,2,3
All
±0.15
% of F.S.
RREF
5/
1,2,3
All
15
25
kΩ
ROUT
Exclusive of span 5/
resistors
1,2,3
All
1.8
3.2
kΩ
9,10,11
All
500
ns
TS1
High Z external load 5/
TS2
75 Ω external load 5/
250
tR
5/
9,10,11
All
30
ns
tF
5/
9,10,11
All
60
ns
RHA device types 01 and 02 supplied to this drawing meet all levels M, D, P, L, and R irradiation for condition A.
However, device types 01 and 02 are only tested at the “R” level in accordance with MIL-STD-883 method 1019
condition A (see 1.5 herein).
RHA device type 03 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels
M, D, P, and L for condition D. However, device type 03 is only tested at the “R” level in accordance with MIL-STD-883,
method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5
herein).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
2/
This parameter is an applied condition of test.
3/
PSS is tested in reference to a VCC = +15 V and VEE = -15 V.
4/
Test shall be performed only at final electrical test.
5/
These tests are controlled via design and are not directly tested. These parameters are characterized on initial design
release and upon design changes which affect these characteristics.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
8
Device types
01, 02, 03
Case outlines
J and X
Terminal number
Terminal symbol
1
NC
2
NC
3
VCC
4
REF OUT
5
REF GND
6
REF IN
7
-VEE
8
BIPOLAR RIN
9
IDAC OUT
10
10 V SPAN
11
20 V SPAN
12
PWR GND
13
BIT 12 IN (LSB)
14
BIT 11 IN
15
BIT 10 IN
16
BIT 9 IN
17
BIT 8 IN
18
BIT 7 IN
19
BIT 6 IN
20
BIT 5 IN
21
BIT 4 IN
22
BIT 3 IN
23
BIT 2 IN
24
BIT 1 IN (MSB)
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
9
FIGURE 2. Calibration circuit, unipolar voltage output.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
10
FIGURE 3. Calibration circuit, bipolar voltage output.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
11
Model
Unipolar
(see figure 2)
Bipolar
(see figure 3)
Circuit connections
Output range
10 V SPAN
pin to
0 V to +10 V
VO
0 V to +5 V
VO
±10 V
NC
±5 V
VO
±2.5 V
VO
Calibration
20 V SPAN
pin to
10 V SPAN
pin
IDAC OUT
pin
Resistor
(R)
VO
1.69 kΩ
10 V SPAN
pin
IDAC OUT
pin
1.43 kΩ
1.1 kΩ
1.43 kΩ
1.1 kΩ
Apply input
code
All 0’s
All 1’s
All 0’s
All 1’s
All 0’s
All 1’s
All 0’s
All 1’s
All 0’s
All 1’s
Adjust
To set VO
R1
R2
R1
R2
R3
R4
R3
R4
R3
R4
0V
+9.99756 V
0V
+4.99878 V
-10 V
+9.99512 V
-5 V
+4.99756 V
-2.5 V
+2.49878 V
FIGURE 4. Operations modes and calibration.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-96755
A
REVISION LEVEL
F
SHEET
12
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection
procedures shall be in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall
be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s
Quality Management (QM) plan.
STANDARD
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1
1
1
Final electrical
parameters (see 4.2)
1,2,3 1/ 2/
1,2,3 1/ 2/
1,2,3 1/ 2/ 3/
Group A test
requirements (see 4.4)
1,2,3,9,10,11 4/
1,2,3,9, 4/
10,11
1,2,3,9, 4/
10,11
Group C end-point electrical
parameters (see 4.4)
1,2,3
1,2,3
1,2,3
Group D end-point electrical
parameters (see 4.4)
1
1
1
Group E end-point electrical
parameters (see 4.4)
1
1
1
Device
class T
As specified
in QM plan
1/ PDA applies to subgroup 1. For class V to subgroups 1 and ∆.
2/ Temperature coefficient parameters only tested at final electrical test.
3/ Delta limits (see table IIB) shall be required and the delta values shall be computed with reference
to the zero hour electrical parameters (see table I).
4/ Subgroups 9, 10, and 11 are guaranteed to the limits in table I if not tested.
TABLE IIB. Post burn-in delta parameters. TA = +25°C.
Parameters
Symbol
Delta limits
Positive supply current
ICC
±1.18 mA
Negative supply current
IEE
±1.45 mA
Output current unipolar
IOUT1
±240 µA
Output current bipolar
IOUT2
±240 µA
VOS
±0.02 %
AE
±0.25 %
Output offset error bipolar
BPOE
±0.13%
Zero error bipolar
BPZE
±0.10 %
Digital input low current
IIL
±1.0 µA
Digital input high current
IIH
±40 nA
Output offset error unipolar
Full scale error unipolar
STANDARD
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TABLE III. Irradiation test connections. (TA = +25°C ±5°C, VCC = +15 V ±0.5 V, VEE = -15 V ±0.5 V)
GROUND
VCC
VEE
+10 V ±0.5 V
+5 V ±0.5 V
Connected
together
No connect
5,9,11,12
3
7
10
13,14,15,16,17,
18,19,20,21,22,
23,24
4,6,8
1,2
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing high dose rate shall be performed in accordance with
MIL-STD-883 method 1019, condition A and as specified herein for device types 01, 02, and 03. For device class T, the total
dose requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535. Total dose irradiation
testing shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein for device
type 03.
4.4.4.2.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be
the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after
any design or process changes which may affect the RHA response of the device.
STANDARD
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5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in
QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
96755
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-565ARH
02
HS-565BRH
03
HS-565BEH
Circuit function
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
Radiation hardened, dielectrically isolated,
high speed, 12-bit, digital-to-analog converter,
with current output
A.1.2.3 Device class designator.
Device class
Q or V
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Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 02, 03
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 02, 03
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 02, 03
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 02, 03
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, 4.4.4.2, and 4.4.4.2.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
Note: Pad numbers reflect terminal numbers when placed in case outlines J and X (see figure 1).
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96755
Die physical dimensions.
Die size: 4600 microns x 2750 microns
Die thickness: 19 ± 1 mils
Interface materials.
Top metallization: Al/Cu 16.0 kÅ ± 2 kÅ
Backside metallization: None
Glassivation.
Type: SiO2
Thickness: 8 kÅ ± 1.0 kÅ
Substrate: Dielectrically isolated (DI)
Assembly related information.
Substrate potential: Insulator
Special assembly instructions:
Pin number 5 is connected to two bonding pads.
Note A refers to pin A which is connected to die attach pad.
FIGURE A-1. Die bonding pad locations and electrical functions - Continued.
STANDARD
MICROCIRCUIT DRAWING
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 12-03-15
Approved sources of supply for SMD 5962-96755 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R9675501VJC
3/
HS1-565ARH-Q
5962R9675501VXC
3/
HS9-565ARH-Q
5962R9675501V9A
3/
HS0-565ARH-Q
5962R9675501TJC
3/
HS1-565ARH-T
5962R9675501TXC
3/
HS9-565ARH-T
5962R9675502VJC
34371
HS1-565BRH-Q
5962R9675502VXC
34371
HS9-565BRH-Q
5962R9675502V9A
34371
HS0-565BRH-Q
5962R9675503VJC
34371
HS1-565BEH-Q
5962R9675503VXC
34371
HS9-565BEH-Q
5962R9675503V9A
34371
HS0-565BEH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.