DATASHEET Radiation Hardened 30V 32-Channel Analog Multiplexer ISL71841SEH Features The ISL71841SEH is a radiation hardened, 32-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI (Silicon On Insulator) process technology to mitigate single-event effects. It operates with a dual supply voltage ranging from ±10.8V to ±16.5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select 1 of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them. • DLA SMD# 5962-15220 The ISL71841SEH’s low rON allows for improved signal integrity and reduced power losses. The ISL71841SEH is also designed for cold sparing making it excellent for high reliability applications that have redundancy requirements. It is designed to provide a high impedance to the analog source in a powered off condition, making it easy to add additional backup devices without loading signal sources. The ISL71841SEH also incorporates input analog overvoltage protection, which will disable the switch to protect downstream devices. • Flexible split rail operation - Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V - Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V The ISL71841SEH is available in a 48 Ld CQFP or die form and operates across the extended temperature range of -55°C to +125°C. • Break-before-make switching There is also a 16-Channel version available called the ISL71840SEH offered in a 28 Ld CDFP, please refer to the ISL71840SEH datasheet for more information. For a list of differences please refer to Table 1 on page 3. Related Literature • UG037, “ISL71841SEHEV1Z Evaluation Board User Guide” • TR007, “Single Event Effects (SEE) Testing of the ISL71841SEH 32:1 30V Multiplexer” • Fabricated using P6SOI process technology - Provides latch-up immunity • ESD protection 8kV (HBM) • Rail-to-rail operation • Overvoltage protection • Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typ) • Adjustable logic threshold control with VREF pin • Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V • Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V • Off switch leakage . . . . . . . . . . . . . . . . . . . . . . . . 100nA (max) • Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . . . . 500ns (typ) • Grounded metal lid (internally connected) • Operating temperature range. . . . . . . . . . . .-55°C to +125°C • Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)* - SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm2/mg * Product capability established by initial characterization. All subsequent lots are assurance tested to 50krad (0.01rad(Si)/s) wafer-by-wafer. ISL71841SEH 600 IN01 500 +125°C IN02 . . . OUT ADC rDS(ON) (Ω) IN03 400 +25°C 300 200 IN32 100 -55°C 5 0 ADDRESS -15 -10 -5.0 0 5.0 10 15 20 SWITCH INPUT VOLTAGE (V) EN FIGURE 1. TYPICAL APPLICATION June 11, 2015 FN8735.0 -20 1 FIGURE 2. rDS(ON) vs POWER SUPPLY ACROSS SWITCH INPUT COMMON MODE VOLTAGE AT +25°C CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL71841SEH Table of Contents Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Specifications (15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Specifications (12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Post High Dose Rate Radiation Characteristics (VS = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Post High Dose Rate Radiation Characteristics (VS = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Post Low Dose Rate Radiation Characteristics (VS = ±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Post Low Dose Rate Radiation Characteristics (VS = ±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-up Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VREF and Logic Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 23 23 23 ISL71841SEH vs ISL71840SEH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Die Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 24 24 Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Submit Document Feedback 2 FN8735.0 June 11, 2015 ISL71841SEH Ordering Information ORDERING NUMBER (Note 2) PART NUMBER (Note 1) TEMP RANGE (°C) PACKAGE (RoHS Compliant) PKG. DWG. # 5962R1522001VXC ISL71841SEHVF -55 to +125 48 LD CQFP R48.A ISL71841SEHF/PROTO ISL71841SEHF/PROTO -55 to +125 48 LD CQFP R48.A 5962R1522001V9A ISL71841SEHVX -55 to +125 DIE ISL71841SEHX/SAMPLE ISL71841SEHX/SAMPLE -55 to +125 DIE ISL71841SEHEV1Z Evaluation Board NOTES: 1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. 2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the “Ordering Information” table must be used when ordering. TABLE 1. TABLE OF DIFFERENCES SPEC ISL71840SEH ISL71841SEH Number of Channels 16 32 Supply Current (I+/I-) 350µA (Max) 400µA (Max) 60nA (Max) 120nA (Max) Output Leakage (+125°C) Submit Document Feedback 3 FN8735.0 June 11, 2015 ISL71841SEH Pin Configuration IN13 IN14 IN15 IN16 NC OUT NC NC IN32 IN31 IN30 IN29 ISL71841SEH (48 LD CQFP) TOP VIEW 7 8 9 10 11 12 13 14 15 16 17 6 5 4 3 2 1 48 47 46 45 44 43 42 41 40 39 38 37 IN28 IN27 IN26 IN25 IN24 IN23 IN22 IN21 IN20 IN19 IN18 IN17 V- EN GND NC A4 NC A3 A1 A2 A0 V+ 36 35 34 33 32 31 18 19 20 21 22 23 24 25 26 27 28 29 30 VREF IN12 IN11 IN10 IN9 IN8 IN7 IN6 IN5 IN4 IN3 IN2 IN1 Pin Descriptions PIN NAME PIN NUMBER NC 2, 26, 27, 47, 48 DESCRIPTION Not connected, no internal connection. OUT 1 Output for multiplexer V+ 19 Positive power supply 30 Negative power supply VINx 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, Inputs for multiplexer 14, 15, 16, 17, 18, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46 Ax 21, 22, 23, 24, 25 Address lines for multiplexer EN 28 Enable control for multiplexer (active low) VREF 20 Reference voltage used to set logic thresholds GND 29 Ground LID NA Package Lid is internally connected to GND (Pin 29) Submit Document Feedback 4 FN8735.0 June 11, 2015 ISL71841SEH Absolute Maximum Ratings Thermal Information (V+) Positive Supply Voltage above GND (Note 5). . . . . . . . . . . . . . . . . +20V Negative Supply Voltage below GND (V-) (Note 5) . . . . . . . . . . . . . . . . .-20V Maximum Supply Voltage Differential (V+ to V-) (Note 5) . . . . . . . . . . . 40V Analog Input Voltage (INx) From GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V+ VREF to GND (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V ESD Tolerance Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 8kV Charged Device Model (Tested per MIL-PRF-883 3015.7) . . . . . . . 250V Machine Model (Tested per MIL-PRF-883 3015.7) . . . . . . . . . . . . . 250V Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 48 Ld CQFP (Notes 3, 4) . . . . . . . . . . . . . . . 50 2 Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C Recommended Operating Conditions Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C Positive Supply Voltage Above GND (V+) . . . . . . . . . . . . . +10.8V to +16.5V Negative Supply Voltage Below GND (V-) . . . . . . . . . . . . . . .-10.8V to -16.5V Supply Voltage Differential (V+ to V-) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. For JC, the “case temp” location is the center of the package underside. 5. Tested in a heavy ion environment at LET = 86.3 MeV•cm2/mg at +125°C. Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. PARAMETER DESCRIPTION VS Analog Input Signal Range rON Channel ON-resistance ΔrON RFLAT(ON) IS(OFF) rON Match Between Channels MIN (Note 6) TYP MAX (Note 6) UNIT V- - V+ V V± = ±15.0V, ±16.5V IOUT = -1mA, VIN = +5V, -5V - - 500 Ω V± = ±15.0V, ±16.5V IOUT = -1mA, VIN = V+, V- - - 700 Ω VIN = +5V, -5V; IOUT = -1mA - 10 20 Ω TEST CONDITIONS ON-resistance Flatness VIN = +5V, -5V - - 25 Ω Switch Off Leakage VIN = V+ - 5V, V± = ±16.5V All unused inputs are tied to V- + 5V -10 - 10 nA Post radiation -100 - 100 nA VIN = V- + 5V, V± = ±16.5V All other inputs = V+ - 5V TA = +25°C, -55°C -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -100 - 100 nA VIN = +25V, V± = VEN = VA = VREF = 0V TA = +25°C, V± = 0V -10 - 10 nA TA = -55°C, +125°C -10 - 80 nA Post radiation -100 - 100 nA VIN = -25V, V± = VEN = VA = VREF = 0V TA = +25°C, V± = 0V -10 - 10 nA TA = -55°C, +125°C -80 - 10 nA Post radiation -100 - 100 nA IS(OFF) POWER OFF Switch Off Leakage with Device Powered Off Submit Document Feedback 5 FN8735.0 June 11, 2015 ISL71841SEH Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER IS(OFF) POWER OFF Switch Off Leakage with Device Powered Off IS(ON) OVERVOLT IS(OFF) OVERVOLT ID(OFF) MIN (Note 6) TYP MAX (Note 6) UNIT VIN = +25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -10 - 80 nA Post radiation -100 - 100 nA VIN = -25V, VEN/VA/VREF = 0V V± = OPEN, TA = +25°C -10 - 10 nA TA = -55°C, +125°C -80 - 10 nA Post radiation -100 - 100 nA VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -80 - 80 nA Post radiation -500 - 500 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -500 - 500 nA VIN = +35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -80 - 80 nA Post radiation -750 - 750 nA VIN = -35V, VOUT = 0V, TA = +25°C, -55°C All unused switch inputs = GND, V± = ±16.5V -10 - 10 nA TA = +125°C -20 - 20 nA Post radiation -750 - 750 nA VOUT = V+ - 5V, All inputs = V- + 5V V± = ±16.5V, TA = +25°C, -55°C -10 - 10 nA 0 - 120 nA -80 - 80 nA -10 - 10 nA TA = +125°C -120 - 0 nA Post radiation -80 - 80 nA VOUT = 0V, VIN = +35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA VOUT = 0V, VIN = -35V, V± = ±16.5V All unused inputs are tied to GND -10 - 10 nA Post radiation -500 - 500 nA DESCRIPTION Switch On Leakage Current Into the Source (overvoltage) Switch Off Leakage Current Into the Source (overvoltage) Switch Off Leakage TEST CONDITIONS TA = +125°C Post radiation V- V+ - VOUT = + 5V, All inputs = 5V V± = ±16.5V, TA = +25°C, -55°C ID(OFF) OVERVOLT Switch Off Leakage Current Into the Drain (overvoltage) Submit Document Feedback 6 FN8735.0 June 11, 2015 ISL71841SEH Electrical Specifications (15V) V+ = 15V, V- = -15V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) MIN (Note 6) TYP MAX (Note 6) UNIT -10 - 10 nA TA = +125°C 0 - 120 nA Post radiation -100 - 100 nA -10 - 10 nA TA = +125°C -120 - 0 nA Post radiation -100 - 100 nA Logic Input High/Low Voltage VREF = 5.0V 1.2 - 1.6 V IAH, IENH Input Current with VAH, VENH VA = VEN = 4.0V V+= 16.5V, V- = -16.5V -100 - 100 nA IAL, IENL Input Current with VAL, VENL VA = VEN = 0.8V V+ = 16.5V, V- = -16.5V -100 - 100 nA I+ Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V - - 400 µA I- Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V -400 - I+ Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V - - I- Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±15.0V, ±16.5V -400 - IREF Supply Current into VREF VREF = 5.5V, VIN = VA = VEN = 0.8V, V± = ±15.0V, ±16.5V 10 - 35 µA tALH Transition Time Figures 4, 5 - 0.5 800 ns tAHL Transition Time Figures 4, 5 - 0.5 800 ns tBBM Break-before-make Delay Figures 8, 9 5 50 200 ns Post radiation 5 - 400 ns Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns Disable Turn-off Time Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns VCTE Charge Injection CL = 100pF, VIN = 0V, (Figure 6) - 2 5 pC VISO Off Isolation VEN = 0V, RL = 1kΩ, f = 100kHz -90 - - dB VCT Crosstalk VEN = 4V, f = 100kHz, VP-P = 1V -90 - - dB PARAMETER ID(ON) DESCRIPTION Switch On Leakage Current Into the Source/Drain TEST CONDITIONS V+ VIN = VOUT = - 5V, TA = +25°C, -55°C All unused inputs = V- + 5V, V± = ±16.5V V- VIN = VOUT = + 5V, TA = +25°C, -55°C All unused inputs = V- + 5V, V± = ±16.5V VAH/L, VENH/L µA 400 µA µA DYNAMIC tENABLE tDISABLE CA CIN(OFF) COUT(OFF) Enable Turn-on Time Digital Input Capacitance Input Capacitance Output Capacitance Submit Document Feedback 7 f = 1MHz, V+ f = 1MHz, V+ f = 1MHz, V+ = V- = 0V - - 7 pF = V- = 0V - - 5 pF = V- = 0V - - 50 pF FN8735.0 June 11, 2015 ISL71841SEH Electrical Specifications (12V) V+ = 12V, V- = -12V, VAH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. PARAMETER DESCRIPTION VS Analog Input Signal Range rON Channel ON-resistance ΔrON RFLAT(ON) TEST CONDITIONS MIN (Note 6) TYP V- MAX (Note 6) UNIT V+ V V± = ±10.8V, ±13.2V IOUT = -1mA, VIN = +5V, -5V - - 500 Ω V± = ±10.8V, ±13.2V IOUT = -1mA, VIN = V+, V- - - 700 Ω rON Match Between Channels VIN = +5V, -5V; IOUT = -1mA - 10 20 Ω ON-resistance Flatness VIN = +5V, -5V, V± = ±13.2V - - 25 Ω VIN = +5V, -5V, V± = ±10.8V, TA = +25°C, -55°C, +125°C - - 30 Ω 40 Ω VIN = +5V, -5V, V± = ±10.8V, post radiation I+ Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V - - 400 µA I- Quiescent Supply Current VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V -400 - - µA I+ Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V - - 400 µA I- Standby Supply Current VIN = VA = VEN = 4.0V, V± = ±10.8V, ±13.2V -400 - - µA IREF Supply Current Into VREF VREF = 5.5V, VIN = VA = VEN = 0.8V, V± = ±10.8V, ±13.2V - - 35 µA tALH Transition Time Figures 4, 5 - 0.5 800 ns tAHL Transition Time Figures 4, 5 - 0.5 800 ns tBBM Break-before-make Delay Figures 8, 9 5 50 200 ns Post radiation 5 - 400 ns Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns Figures 6, 7 - 0.5 600 ns Post radiation - - 800 ns DYNAMIC tENABLE tDISABLE Enable Turn-on Time Disable Turn-off Time NOTE: 6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. Submit Document Feedback 8 FN8735.0 June 11, 2015 ISL71841SEH TABLE 2. TRUTH TABLE A4 A3 A2 A1 A0 EN “ON”-CHANNEL X X X X X 1 None 0 0 0 0 0 0 1 0 0 0 0 1 0 2 0 0 0 1 0 0 3 0 0 0 1 1 0 4 0 0 1 0 0 0 5 0 0 1 0 1 0 6 0 0 1 1 0 0 7 0 0 1 1 1 0 8 0 1 0 0 0 0 9 0 1 0 0 1 0 10 0 1 0 1 0 0 11 0 1 0 1 1 0 12 0 1 1 0 0 0 13 0 1 1 0 1 0 14 0 1 1 1 0 0 15 0 1 1 1 1 0 16 1 0 0 0 0 0 17 1 0 0 0 1 0 18 1 0 0 1 0 0 19 1 0 0 1 1 0 20 1 0 1 0 0 0 21 1 0 1 0 1 0 22 1 0 1 1 0 0 23 1 0 1 1 1 0 24 1 1 0 0 0 0 25 1 1 0 0 1 0 26 1 1 0 1 0 0 27 1 1 0 1 1 0 28 1 1 1 0 0 0 29 1 1 1 0 1 0 30 1 1 1 1 0 0 31 1 1 1 1 1 0 32 Note: X = Don’t care, “1” = Logic High, “0” = Logic Low Submit Document Feedback 9 FN8735.0 June 11, 2015 ISL71841SEH Block Diagram VDD A0 IN1 1 OUT A1 A2 A3 A4 IN32 32 EN VSS ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS MULTIPLEX SWITCHES FIGURE 3. BLOCK DIAGRAM Submit Document Feedback 10 FN8735.0 June 11, 2015 ISL71841SEH Timing Diagrams ISL71841SEH +4.0V +0.8V A4 A3 A2 A1 A0 50Ω 4V IN01 +15V, 0V “11111” ADDRESS IN02-IN31 50% 0V, +15V IN32 50% “00000” 0.8V 15V +0.8V tAHL OUT EN 10kΩ 50pF 50% 50% 0V FIGURE 4. ADDRESS TIME TO OUTPUT TEST CIRCUIT FIGURE 5. ADDRESS TIME TO OUTPUT DIAGRAM ISL71841SEH A4 A3 A2 A1 A0 tALH OUTPUT 4V IN01 +10V IN02-IN32 ENABLE 50% 50% 0.8V 10V EN +4.0V OUT 1kΩ 50Ω +0.8V 50pF FIGURE 7. TIME TO ENABLE/DISABLE OUTPUT DIAGRAM 4V ISL71841SEH A4 A3 A2 A1 A0 50Ω +0.8V +0.8V IN01 +5V ADDRESS IN02-IN31 IN32 0.8V EN OUT VOUT 1kΩ 50pF 5V 50% OUT 0V 4V ISL71841SEH +0.8V 50Ω A4 A3 A2 A1 A0 tBBM FIGURE 9. BREAK-BEFORE-MAKE DIAGRAM FIGURE 8. BREAK-BEFORE-MAKE TEST CIRCUIT +4.0V 50% 50% 0V FIGURE 6. TIME TO ENABLE/DISABLE OUTPUT TEST CIRCUIT +4.0V tDISABLE tENABLE OUTPUT IN01 0V ADDRESS IN02-IN31 IN32 0.8V 15V +0.8V EN OUT Q = 100pF * ΔVOUT VOUT OUT 100pF ΔVOUT 0V FIGURE 10. CHARGE INJECTION TEST CIRCUIT Submit Document Feedback 11 FIGURE 11. CHARGE INJECTION DIAGRAM FN8735.0 June 11, 2015 ISL71841SEH Typical Performance Curves 600 600 500 500 +125°C +25°C 300 +125°C +25°C 400 rDS(ON) (Ω) 400 rDS(ON) (Ω) VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. 300 200 200 100 100 -55°C -55°C 0 -20 -15 -10 -5 0 5 10 15 0 -20 20 -15 -10 SWITCH INPUT VOLTAGE (V) 600 700 500 600 +125°C 200 0 -20 20 400 300 -15 -10 -5 0 5 10 15 -55°C 0 -15 20 -10 SWITCH INPUT VOLTAGE (V) -5 0 5 10 15 10 15 SWITCH INPUT VOLTAGE (V) FIGURE 14. rDS(ON) vs VCM (V± = 16.5V) FIGURE 15. rDS(ON) vs VCM (V± = 10.8V) 600 600 500 500 +125°C +25°C 400 rDS(ON) (Ω) rDS(ON) (Ω) 15 +25°C 100 -55°C 300 200 0 -15 10 200 100 100 5 +125°C 500 300 400 0 FIGURE 13. rDS(ON) vs VCM (V± = 15.0V) rDS(ON) (Ω) rDS(ON) (Ω) FIGURE 12. rDS(ON) vs VCM (V± = 14.5V) 400 +25°C -5 SWITCH INPUT VOLTAGE (V) +125°C +25°C 300 200 100 -55°C -10 -5 0 5 SWITCH INPUT VOLTAGE (V) FIGURE 16. rDS(ON) vs VCM (V± = 12.0V) Submit Document Feedback 12 10 15 0 -15 -55°C -10 -5 0 5 SWITCH INPUT VOLTAGE (V) FIGURE 17. rDS(ON) vs VCM (V± = 13.2V) FN8735.0 June 11, 2015 ISL71841SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued) 700 600 t ADDHL (ns) 500 5V/DIV +125°C 400 +25°C -55°C 300 200 2V/DIV 100 tADDLH = 211.199ns tADDHL = 561.469ns 0 10 11 12 500ns/DIV 13 14 15 16 17 SPLIT SUPPLY RAILS (±V) FIGURE 18. TYPICAL ADDRESS TO OUTPUT DELAY (V± = ±15V, +25°C) FIGURE 19. ADDRESS TO OUTPUT DELAY (HIGH-TO-LOW) 300 250 t ADDLH (ns) 5V/DIV 200 -55°C +125°C 150 1V/DIV +25°C 100 50 0 10 11 12 13 14 15 16 17 tDISABLE = 202.207ns tENABLE = 352.379ns 500ns/DIV SPLIT SUPPLY RAILS (±V) FIGURE 21. TYPICAL ENABLE TO OUTPUT DELAY (V± = ±15V, +25°C) FIGURE 20. ADDRESS TO OUTPUT DELAY (LOW-TO-HIGH) 400 600 350 500 300 t DISABLE (ns) t ENABLE (ns) 300 400 +125°C 200 +25°C -55°C 250 200 150 100 100 0 10 -55°C +25°C +125°C 50 11 12 13 14 15 16 SPLIT SUPPLY RAILS (±V) FIGURE 22. ENABLE TO OUTPUT DELAY (LOW-TO-HIGH) Submit Document Feedback 13 17 0 10 11 12 13 14 15 16 17 SPLIT SUPPLY RAILS (±V) FIGURE 23. DISABLE TO OUTPUT DELAY (LOW-TO-HIGH) FN8735.0 June 11, 2015 ISL71841SEH Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, TA = +25°C, unless otherwise specified. (Continued) 120 100 +125°C 2V/DIV tBBM (ns) 80 60 +25°C 40 1V/DIV -55°C 20 tBBM = 73.425ns 0 10 11 12 13 14 15 16 SPLIT SUPPLY RAILS (±V) FIGURE 24. TYPICAL BREAK-BEFORE-MAKE DELAY (V± = 15V, +25°C) FIGURE 25. BREAK-BEFORE-MAKE DELAY 120 120 100 100 CROSSTALK (dB) OFF ISOLATION (dB) 200ns/DIV 80 60 40 20 17 80 60 40 20 0 10 100 1k 10k 100k FREQUENCY (Hz) FIGURE 26. OFF ISOLATION (V± = ±15V, +25°C) Submit Document Feedback 14 1M 0 10 100 1k 10k 100k 1M FREQUENCY (Hz) FIGURE 27. CROSSTALK (V± = ±15V, +25°C) FN8735.0 June 11, 2015 ISL71841SEH Post High Dose Rate Radiation Characteristics (VS = ±15V) 7 0 6 -1 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. BIASED 5 4 3 GROUNDED 2 GROUNDED -2 -3 -4 BIASED -5 -6 1 0 0 20 40 60 80 100 120 140 -7 160 0 20 40 80 100 120 140 160 FIGURE 29. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION FIGURE 28. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION 1.6 60 1.4 SUPPLY CURRENT (mA) 60 HIGH DOSE RATE RADIATION (krad(Si)) HIGH DOSE RATE RADIATION (krad(Si)) 50 BIASED 1.2 BIASED 40 rDS(ON) (Ω) 1.0 0.8 GROUNDED 0.6 30 GROUNDED 20 0.4 10 0.2 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si))) HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 31. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION FIGURE 30. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION 25 20 18 16 BIASED 14 BIASED 15 rDS(ON) (Ω) rDS(ON) (Ω) 20 10 12 10 8 6 5 0 0 GROUNDED 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 32. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION Submit Document Feedback 15 GROUNDED 4 2 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 33. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post High Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 8 250 7 6 ADDRESS TIME (ns) 5 rDS(ON) (Ω) BIASED 200 BIASED 4 3 2 GROUNDED 1 0 150 100 GROUNDED 50 -1 -2 0 20 40 60 80 100 120 140 0 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 34. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION FIGURE 35. tADD SHIFT (LOW-TO-HIGH) vs HDR RADIATION 35 60 30 50 BIASED BIASED 20 BBM TIME (ns) ADDRESS TIME (ns) 25 15 10 5 GROUNDED 40 30 20 GROUNDED 0 10 -5 -10 0 20 40 60 80 100 120 140 0 0 160 20 HIGH DOSE RATE RADIATION (krad(Si)) 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 36. tADD SHIFT (HIGH-TO-LOW) vs HDR RADIATION FIGURE 37. tBBM SHIFT vs HDR RADIATION 50 200 180 160 DISABLE TIME (ns) ENABLE TIME (ns) 40 BIASED 30 20 10 GROUNDED 140 BIASED 120 GROUNDED 100 80 60 40 0 20 -10 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 38. tENABLE SHIFT vs HDR RADIATION Submit Document Feedback 16 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 39. tDISABLE SHIFT vs HDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post High Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 7 0 -1 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 6 BIASED 5 4 3 2 GROUNDED -3 -4 -5 1 0 GROUNDED -2 BIASED -6 0 20 40 60 80 100 120 140 -7 0 160 20 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 40. ICC SUPPLY CURRENT SHIFT vs HDR RADIATION SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) BIASED 1.2 1.0 0.8 GROUNDED 0.6 0.4 0.2 0 20 40 60 80 100 120 140 50 100 120 140 160 40 30 20 10 0 160 BIASED GROUNDED 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 60 80 30 25 25 20 rDS(ON) (Ω) BIASED 15 GROUNDED 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 44. rDS(ON) SHIFT (VIN = +5V) vs HDR RADIATION Submit Document Feedback 17 120 140 160 BIASED 15 10 10 5 100 FIGURE 43. rDS(ON) SHIFT (VIN = V+) vs HDR RADIATION 30 20 40 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 42. IREF SUPPLY CURRENT SHIFT vs HDR RADIATION rDS(ON) (Ω) 80 60 1.4 0 60 FIGURE 41. IEE SUPPLY CURRENT SHIFT vs HDR RADIATION 1.6 0 40 HIGH DOSE RATE RADIATION (krad(Si)) GROUNDED 5 160 0 0 20 40 60 80 100 120 140 160 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 45. rDS(ON) SHIFT (VIN = -5V) vs HDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post High Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 300 8 250 ADDRESS TIME (ns) 10 rDS(ON) (Ω) 6 BIASED 4 2 0 -2 20 40 60 80 BIASED 150 100 50 GROUNDED 0 200 100 120 140 0 160 GROUNDED 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 60 40 BIASED 50 30 BIASED BBM TIME (ns) ADDRESS TIME (ns) 35 25 20 15 10 0 20 40 60 80 100 40 30 20 GROUNDED GROUNDED 10 5 120 140 0 160 0 20 HIGH DOSE RATE RADIATION (krad(Si)) 60 80 100 120 140 160 FIGURE 49. tBBM SHIFT vs HDR RADIATION 200 50 180 45 BIASED 160 DISABLE TIME (ns) 40 ENABLE TIME (ns) 40 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 48. tADD SHIFT (HIGH-TO-LOW) vs HDR RADIATION 35 30 25 20 15 GROUNDED 10 BIASED 140 120 GROUNDED 100 80 60 40 20 5 0 160 FIGURE 47. tADD SHIFT (LOW-TO-HIGH) vs HDR RADIATION FIGURE 46. rDS(ON) SHIFT (VIN = V-) vs HDR RADIATION 0 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) FIGURE 50. tENABLE SHIFT vs HDR RADIATION Submit Document Feedback 18 160 0 0 20 40 60 80 100 120 140 HIGH DOSE RATE RADIATION (krad(Si)) 160 FIGURE 51. tDISABLE SHIFT vs HDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post Low Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 1.2 0 -0.2 GROUNDED SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 1.0 0.8 0.6 BIASED 0.4 0.2 0 BIASED -0.4 -0.6 -0.8 -1.0 GROUNDED -1.2 0 10 20 30 40 50 -1.4 60 0 FIGURE 52. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION 20 30 40 50 60 FIGURE 53. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION 10 2.5 8 GROUNDED 2.0 BIASED 6 rDS(ON) (Ω) SUPPLY CURRENT (mA) 10 LOW DOSE RATE RADIATION (krad(Si)) LOW DOSE RATE RADIATION (krad(Si)) 1.5 BIASED 1.0 4 2 0 GROUNDED 0.5 0.0 -2 0 10 20 30 40 50 -4 60 0 LOW DOSE RATE RADIATION (krad(Si)) 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 54. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 55. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION 25 6 5 20 4 BIASED 15 rDS(ON) (Ω) rDS(ON) (Ω) 3 2 GROUNDED 1 0 BIASED 10 5 -1 -2 0 GROUNDED -3 -4 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 56. rDS(ON) Shift (VIN = -5V) vs LDR RADIATION Submit Document Feedback 19 60 -5 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 57. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post Low Dose Rate Radiation Characteristics (VS = ±15V) Unless otherwise specified, VS = ± 15V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 250 0 BIASED -1 200 -2 rDS(ON) (Ω) ADDRESS TIME (ns) GROUNDED -3 -4 -5 -6 -7 100 50 -8 BIASED -9 -10 0 10 20 30 40 50 0 0 60 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 59. tADD SHIFT (LOW-TO-HIGH) vs LDR RADIATION 0 14 -40 BBM TIME (ns) -30 BIASED -50 -60 -70 -80 -90 -100 0 GROUNDED 12 -20 ADDRESS TIME (ns) 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 58. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION -10 20 30 40 50 8 BIASED 6 4 2 GROUNDED 10 10 0 60 0 LOW DOSE RATE RADIATION (krad(Si)) 300 15 250 DISABLE TIME (ns) BIASED 10 5 GROUNDED 30 40 50 60 BIASED 200 GROUNDED 150 100 50 -5 -10 0 20 FIGURE 61. tBBM SHIFT vs LDR RADIATION 20 0 10 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 60. tADD SHIFT (HIGH-TO-LOW) vs LDR RADIATION ENABLE TIME (ns) GROUNDED 150 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 62. tENABLE SHIFT vs LDR RADIATION Submit Document Feedback 20 60 0 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 63. tDISABLE SHIFT vs LDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post Low Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. 1.2 0 -0.2 GROUNDED SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 1.0 0.8 0.6 BIASED 0.4 0.2 0.0 BIASED -0.4 -0.6 -0.8 -1.0 GROUNDED -1.2 0 10 20 30 40 50 -1.4 60 0 LOW DOSE RATE RADIATION (krad(Si)) 20 30 30 GROUNDED rDS(ON) (Ω) 25 1.5 1.0 BIASED BIASED 20 15 10 5 0.5 0 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) -5 60 GROUNDED 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 67. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION FIGURE 66. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION 8 12 10 6 8 BIASED 4 2 0 GROUNDED 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 68. rDS(ON) SHIFT (VIN = +5V) vs LDR RADIATION Submit Document Feedback 21 2 BIASED 0 -2 -2 0 GROUNDED 4 6 rDS(ON) (Ω) rDS(ON) (Ω) 60 35 2.0 -4 50 FIGURE 65. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION 2.5 0 40 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 64. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION SUPPLY CURRENT (mA) 10 60 -4 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 69. rDS(ON) SHIFT (VIN = -5V) vs LDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Post Low Dose Rate Radiation Characteristics (VS = ±12V) Unless otherwise specified, VS = ± 12V, VCM = 0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed. (Continued) 350 0 300 ADDRESS TIME (ns) 2 rDS(ON) (Ω) -2 GROUNDED -4 -6 -8 -10 -12 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 200 100 16 15 14 10 12 BBM TIME (ns) BIASED 5 0 -5 10 8 BIASED 6 2 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 0 60 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 60 FIGURE 73. tBBM SHIFT vs LDR RADIATION 25 300 20 250 DISABLE S TIME (ns) BIASED ENABLE TIME (ns) 60 GROUNDED FIGURE 72. tADD SHIFT (HIGH-TO-LOW) vs LDR RADIATION 15 10 5 GROUNDED 0 200 BIASED 150 100 GROUNDED 50 -5 -10 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) 4 GROUNDED -15 -20 0 FIGURE 71. tADD SHIFT (LOW-TO-HIGH) vs LDR RADIATION 20 -10 GROUNDED 150 0 60 FIGURE 70. rDS(ON) SHIFT (VIN = V-) vs LDR RADIATION ADDRESS TIME (ns) 250 50 BIASED 0 BIASED 0 10 20 30 40 50 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 74. tENABLE SHIFT vs LDR RADIATION Submit Document Feedback 22 60 0 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) FIGURE 75. tDISABLE SHIFT vs LDR RADIATION FN8735.0 June 11, 2015 ISL71841SEH Applications Information ISL71841SEH vs ISL71840SEH Power-up Considerations There is a 16-Channel version of the ISL71841SEH available in a 28 Ld CDFP. In terms of performance specs, the parts are very similar in behavior. Apart from the apparent increase in channel density, the ISL71841SEH does have slightly higher output leakage compared to the ISL71840SEH due to having more channels connected to the output. The supply current for the ISL71841SEH is also a bit higher compared to the ISL71840SEH. (See Table 1 on page 3). The circuit is designed to be insensitive to any given power-up sequence between V+, V- and VREF, however, it is recommended that all supplies power-up relatively close to each other. Overvoltage Protection The ISL71841SEH has overvoltage protection on both the input as well as the output. On the output, the voltage is limited to a diode past the rails. Each of the inputs has independent overvoltage protection that works regardless of the switch being selected. If a switch experiences an overvoltage condition (3-4V) past the rail), the switch is turned off. As soon as the voltage returns within the rails, the switch returns to normal operation. VREF and Logic Functionality The VREF pin sets the logic threshold for the ISL71841SEH. The range for VREF is between 4.5V and 5.5V with a nominal voltage of 5V. The address pins and enable are compared against roughly 30% of VREF voltage (refer to Figure 76). With 5.0V on VREF, the switching point is set to around 1.4V. This switching point allows for both 5V and 3.3V logic control. ISL71841SEH A/EN 400kΩ VREF TO DECODER 200kΩ FIGURE 76. SIMPLIFIED VREF CIRCUITRY Submit Document Feedback 23 FN8735.0 June 11, 2015 ISL71841SEH Die Characteristics Assembly Related Information Die Dimensions SUBSTRATE POTENTIAL Floating 5000µm x 4080µm (197mils x 161mils) Thickness: 483µm ± 25µm (19mils ± 1 mil) Additional Information Interface Materials WORST CASE CURRENT DENSITY GLASSIVATION 1.6 x 105 A/cm2 Type: 12kÅ Silicon Nitride on 3kÅ Oxide TRANSISTOR COUNT TOP METALLIZATION 10752 Type: 300kÅ Tin on 2.8µm AlCu In Bondpads, Tin has been removed. Weight of Packaged Device 1.54 grams (Typical) BACKSIDE FINISH Lid Characteristics Silicon Finish: Gold Potential: Grounded, tied to package pin 29 PROCESS P6SOI Metalization Mask Layout IN12 IN13 IN14 IN15 IN16 OUT IN32 IN31 IN30 IN29 IN28 IN11 IN27 IN10 IN26 IN9 IN25 IN8 IN24 IN7 IN23 IN6 IN22 IN5 IN21 IN4 IN20 IN3 IN19 IN2 IN18 IN1 Submit Document Feedback V+ VREF 24 A0 A1 A2 A3 A4 EN BAR GND V‐ IN17 FN8735.0 June 11, 2015 ISL71841SEH Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION June 11, 2015 FN8735.0 CHANGE Initial Release About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 25 FN8735.0 June 11, 2015 ISL71841SEH Package Outline Drawing R48.A 48 CERAMIC QUAD FLATPACK PACKAGE (CQFP) Rev 3, 10/12 1.118 (28.40) 1.080 (27.43) 0.572 (14.53) 0.555 (14.10) #1 #48 0.287 (7.29) 0.253 (6.43) 0.040 (1.02) BSC PIN 1 INDEX AREA 0.572 (14.53) 0.555 (14.10) 1.118 (28.40) 1.080 (27.43) 0.007 (0.18) MIN 0.015 (0.38) 0.008 (0.20) 0.015 (0.38) MIN TOP VIEW 0.099 (2.51) 0.076 (1.93) 0.016 (0.41) 0.009 (0.23) SIDE VIEW NOTE: 1. All dimensions are in inches (millimeters). Submit Document Feedback 26 FN8735.0 June 11, 2015