Transistor 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm ■ Absolute Maximum Ratings * +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 (Ta=25˚C) 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –20 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Peak collector current ICP –2 A Collector current IC –1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ Collector cutoff current ICBO VCB = –10V, IE = 0 Collector to emitter voltage VCEO IC = –1mA, IB = 0 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1*1 VCE = –2V, IC = –500mA*2 130 hFE2 VCE = –2V, IC = –1.5A*2 50 Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –6V, IE = 0, f = 1MHz 40 Forward current transfer ratio FE1 Unit –1 µA –20 V V 280 – 0.5 –1.2 V V MHz pF *2 *1h max Pulse measurement Rank classification Rank R S hFE1 130 ~ 210 180 ~ 280 Marking Symbol HR HS 1 2SB956 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 Ta=25˚C –1.0 1.0 IB=–5.0mA –4.5mA –4.0mA – 0.8 0.8 –3.5mA –3.0mA – 0.6 0.6 –2.5mA –2.0mA – 0.4 0.4 –1.5mA –1.0mA – 0.2 0.2 0 – 0.5mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 25˚C Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.003 –1 –3 –10 25˚C 200 –25˚C 100 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 10 3 Single pulse Ta=25˚C ICP t=10ms 1 IC t=1s – 0.3 60 – 0.1 – 0.03 40 – 0.01 20 – 0.003 –30 –100 Collector to base voltage VCB (V) –3 –10 VCB=–6V Ta=25˚C 400 350 300 250 200 150 100 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 0 10 30 100 300 Emitter current IE (mA) Area of safe operation (ASO) 80 –1 Collector current IC (A) 50 Collector current IC (A) Collector current IC (A) Collector output capacitance Cob (pF) Ta=75˚C 0 – 0.01 – 0.03 – 0.1 – 0.3 IE=0 f=1MHz Ta=25˚C –10 – 0.003 500 400 Cob — VCB –3 – 0.01 fT — I E 500 Collector current IC (A) 0 –1 – 0.03 450 300 Ta=75˚C –25˚C VCE=–2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 100 –6 25˚C – 0.1 600 IC/IB=10 120 –5 –1 hFE — IC –10 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –4 IC/IB=20 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –3 –10 – 0.3 Transition frequency fT (MHz) 0 2 VCE(sat) — IC Collector current IC (A) Collector power dissipation PC (W) IC — VCE –1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –100 Collector to emitter voltage VCE (V) 1000