Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.0 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 * Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 0.45±0.05 (Ta=25˚C) 3 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –10V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE*1 VCE = –2V, IC = –2A*2 90 Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz typ FE Unit nA –100 nA V V 625 –1 120 V MHz 85 *2 *1h max –100 pF Pulse measurement Rank classification Rank P Q R hFE 90 ~ 135 120 ~ 205 180 ~ 625 1 2SB1050 Transistor PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 –5 –45mA –40mA –35mA –30mA –4 –25mA –20mA –3 –15mA –2 –10mA –10 –5mA –1 25˚C –8 Ta=75˚C –25˚C –6 –4 –2 0 40 60 80 100 120 140 160 –2 –3 –4 –5 –6 0 – 0.4 –100 Collector to emitter saturation voltage VCE(sat) (V) VCE=–2V Ta=75˚C 500 25˚C –25˚C –1.6 –2.0 240 IC/IB=30 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 100 –1.2 fT — I E –30 – 0.3 200 – 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 600 300 –1 Collector to emitter voltage VCE (V) hFE — IC 400 0 0 VCB=–6V Ta=25˚C Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE VCE=–2V Ta=25˚C IB=–50mA 0.2 0 200 160 120 80 40 – 0.03 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 250 200 150 100 50 0 –1 –3 –10 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB 300 Collector output capacitance Cob (pF) –12 Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 0 –100 Collector to base voltage VCB (V) 2 IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 1.6 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000