Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.0 4.1±0.2 0.85 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 7 ● 1.0 0. ● 2.5±0.1 1.5 R0.9 R0.9 R ■ Features 1.0±0.1 0.4 1.5 ■ Absolute Maximum Ratings (Ta=25˚C) 3 * Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter Collector cutoff current 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Symbol Conditions ICBO VCB = 15V, IE = 0 min typ max Unit 1 µA 10 µA ICEO VCE = 15V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V 150mA* Forward current transfer ratio hFE VCE = 10V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA* 1000 2500 Transition frequency fT VCB = 20V, IE = –20mA, f = 200MHz 55 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11 0.4 V MHz 15 *2 pF Pulse measurement 1 Transistor 2SD1458 PC — Ta IC — VCE 200 0.8 0.6 0.4 0.2 2.0 IB=100µA 90µA 80µA 70µA 160 120 60µA 50µA 40µA 80 30µA 20µA 40 25˚C Ta=75˚C –25˚C 1.2 0.8 0.4 0 80 120 160 200 0 0 2 4 6 8 10 VCE(sat) — IC 30 1500 1 Ta=75˚C –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 20 16 12 8 4 0 1 3 10 25˚C –25˚C 30 500 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 24 100 Collector to base voltage VCB (V) 2.0 VCB=10V Ta=25˚C 1000 25˚C 1.6 300 Ta=75˚C 2000 3 1.2 VCE=10V 2500 10 0.8 fT — I E 3000 Forward current transfer ratio hFE IC/IB=10 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 0.3 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 1.6 10µA 0 Collector output capacitance Cob (pF) VCE=10V Collector current IC (A) 1.0 2.4 Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (W) 1.2 10 250 200 150 100 50 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)