Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm ■ Absolute Maximum Ratings * +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. 45° 4.0–0.20 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 (Ta=25˚C) 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A Collector current IC 1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1V Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 7V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 10 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 Forward current transfer ratio hFE VCE = 1V, IC = 400mA*2 Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 25mA*2 0.17 Transition frequency fT VCB = 60V, IE = –50mA, f = 200MHz 190 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 50 pF Forward voltage *1 Applicable to the built-in diode. VF *1 V 200 700 0.25 IF = 500mA 1.3 *2 V V Pulse measurement 1 2SD2441 Transistor PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 2.4 1.0 0.2 0 2.5mA 0.8 2.0mA 0.6 1.5mA 0.4 1.0mA 0.2 0.5mA 40 60 80 100 120 140 160 2 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) IE=0 f=200MHz Ta=25˚C 100 80 60 40 20 0 1 3 10 30 6 8 10 12 0 0.2 0.4 100 Collector to base voltage VCB (V) 0.6 600 500 Ta=75˚C 400 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 1.0 1.2 VCB=6V f=200MHz Ta=25˚C VCE=1V 300 0.8 Base to emitter voltage VBE (V) fT — I E 1 3 Collector current IC (A) Cob — VCB 120 4 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 1 –25˚C 0.8 hFE — IC 3 0.1 Ta=75˚C 1.2 Collector to emitter voltage VCE (V) IC/IB=50 0.3 25˚C 0 0 VCE(sat) — IC 10 1.6 0.4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector output capacitance Cob (pF) 2.0 0 0 2 VCE=1V Ta=25˚C IB=3.0mA Collector current IC (A) 1.2 IC — VBE 1.2 Collector current IC (W) Collector power dissipation PC (W) 1.4 10 500 400 300 200 100 0 –1 –3 –10 –30 Emitter current IE (mA) –100