TSM5NB50 D15

TSM5NB50
500V N-Channel Power MOSFET
TO-220
ITO-220
Parameter
Value
Unit
VDS
500
V
RDS(on) (max)
1.5
Ω
Qg
14
nC
TO-252
(DPAK)
Application
●
●
Key Parameter Performance
t R NB
eco 50C
mm Z
en
de
d
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
Power Supply.
Lighting
Ordering Information
Package
Packing
TSM5NB50CZ C0G
TO-220
50pcs / Tube
M5
Part No.
TSM5NB50CI C0G
ITO-220
50pcs / Tube
TSM5NB50CH C5G
TO-251
75pcs / Tube
TS
TSM5NB50CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
N-Channel MOSFET
No
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings (TC = 25oC unless otherwise noted)
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
5
A
3
A
IDM
20
A
EAS
100
mJ
Continuous Drain Current
Pulsed Drain Current
Tc = 25ºC
(Note 1)
Tc = 100ºC
(Note 2)
Single Pulse Avalanche Energy
(Note 3)
Total Power Dissipation @ TC = 25ºC
Operating Junction Temperature
Storage Temperature Range
Document Number: DS_P0000115
ID
PTOT
54
33
70
W
TJ
-55 to +150
°C
TSTG
-55 to +150
°C
1
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Thermal Resistance - Junction to Case
RӨJC
2.3
3.8
1.78
°C/W
Thermal Resistance - Junction to Ambient
RӨJA
83
62.5
62.5
°C/W
Electrical Specifications (TA=25ºC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
VGS = 0V, ID = 250µA
BVDSS
500
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 2.5A
RDS(ON)
--
1.3
1.5
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.5
3.5
4.5
V
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
IDSS
--
--
1
µA
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
gfs
--
3.5
--
S
Qg
--
14
--
Qgs
--
4.5
--
Qgd
--
5.5
--
Ciss
--
552
--
Coss
--
83
--
Crss
--
18
--
td(on)
--
12
--
tr
--
22
--
td(off)
--
33
--
tf
--
21
--
Gate Body Leakage
t R NB
eco 50C
mm Z
en
de
d
Drain-Source Breakdown Voltage
Forward Transfer Conductance
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Input Capacitance
Output Capacitance
VDS = 300V, ID = 5A,
VGS = 10V
M5
Gate-Drain Charge
VDS = 10V, ID = 2.5A
VDS = 25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
(Note 6)
TS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 5A,
No
Switching
VDD = 300V, RG = 25Ω
Source-Drain Diode Ratings and Characteristic
nC
pF
ns
(Note 4)
Source Current
Integral reverse diode in
IS
--
--
5
A
Source Current (Pulse)
the MOSFET
ISM
--
--
20
A
Diode Forward Voltage
IS = 5A, VGS = 0V
VSD
--
0.9
1.5
V
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
o
3. L = 40mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000115
2
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Electrical Characteristics Curves
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
TS
M5
t R NB
eco 50C
mm Z
en
de
d
Output Characteristics
Source-Drain Diode Forward Current vs. Voltage
No
On-Resistance vs. Junction Temperature
Document Number: DS_P0000115
3
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Electrical Characteristics Curves
BVDSS vs. Junction Temperature
t R NB
eco 50C
mm Z
en
de
d
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
TS
M5
Maximum Safe Operating Area (TO-220)
No
Maximum Safe Operating Area (DPAK/IPAK)
Document Number: DS_P0000115
4
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
10
1
100
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
t R NB
eco 50C
mm Z
en
de
d
100
10-1
10-3
10-4
10-6
M5
10-2
10-5
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-4
TS
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
101
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
10
100
No
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
1
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
Document Number: DS_P0000115
5
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Unit: Millimeters
TS
M5
t R NB
eco 50C
mm Z
en
de
d
TO-220 Mechanical Drawing
Marking Diagram
No
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
V =Aug
S =May T =Jun U =Jul
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000115
6
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Unit: Millimeters
TS
M5
t R NB
eco 50C
mm Z
en
de
d
ITO-220 Mechanical Drawing
Marking Diagram
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
No
G
Y
WW
F
Document Number: DS_P0000115
7
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Unit: Millimeters
M5
Marking Diagram
t R NB
eco 50C
mm Z
en
de
d
TO-252 (DPAK) Mechanical Drawing
No
TS
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
V =Aug
S =May T =Jun U =Jul
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000115
8
Version: D15
TSM5NB50
500V N-Channel Power MOSFET
Unit: Millimeters
TS
M5
t R NB
eco 50C
mm Z
en
de
d
TO-251 (IPAK) Mechanical Drawing
Marking Diagram
No
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000115
9
Version: D15
TSM5NB50
No
TS
M5
t R NB
eco 50C
mm Z
en
de
d
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000115
10
Version: D15