TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● ● Low RDS(ON) 2.2Ω (Typ.) Low gate charge typical @ 14.5nC (Typ.) Low Crss typical @ 7.0pF (Typ.) 100% Avalanche Tested Ordering Information Part No. Package Packing TSM4NB60CH C5G TO-251 75pcs / Tube TSM4NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM4NB60CZ C0 TO-220 50pcs / Tube TSM4NB60CI C0 ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 4 A 2.4 A Tc = 25ºC Continuous Drain Current Tc = 100ºC ID Pulsed Drain Current * IDM 16 A Single Pulse Avalanche Energy (Note 2) EAS 100 mJ Avalanche Current (Repetitive) (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 5 mJ dv/dt 4.5 V/ns Peak Diode Recovery dv/dt (Note 3) o Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature PTOT TJ TSTG 1/10 50 25 150 -55 to +150 70 W ºC o C Version: B11 TSM4NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Limit Unit IPAK/DPAK ITO-220 TO-220 2.5 5 1.78 o 62.5 o RӨJA 83 62.5 C/W C/W Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2.2 2.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 2A gfs -- 2.6 -- S VDS = 480V, ID = 4A, Qg -- 14.5 -- Gate-Source Charge VGS = 10V Qgs -- 3.4 -- Gate-Drain Charge (Note 4,5) Qgd -- 7 -- Ciss -- 500 -- Coss -- 53.2 -- Crss -- 7 -- td(on) -- 11 -- tr -- 20 -- td(off) -- 30 -- tf -- 19 -- Dynamic Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 4A, VDD = 300V, RG =25Ω (Note 4,5) nS Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 4 A Source Current (Pulse) the MOSFET ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.13 V Reverse Recovery Time VGS = 0V, IS =4A, tfr -- 522 -- nS dIF/dt = 100A/us Reverse Recovery Charge Qfr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=4A, L=8mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 1.6 -- uC 2/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 5/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/10 Version: B11 TSM4NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B11