TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features ● ● ● ● Low RDS(ON) 2.2Ω (Typ.) Low gate charge typical @ 14.5nC (Typ.) Low Crss typical @ 7pF (Typ.) 100% Avalanche Tested Ordering Information Part No. Package Packing TSM4NB60CH C5G TO-251 75pcs / Tube TSM4NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM4NB60CZ C0 TO-220 50pcs / Tube TSM4NB60CI C0G ITO-220 Note: “G” denotes for Halogen Free N-Channel MOSFET 50pcs / Tube Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 4 A 2.4 A Continuous Drain Current TC=25ºC TC=100ºC ID Pulsed Drain Current * IDM 16 A Single Pulse Avalanche Energy (Note 2) EAS 70 mJ Avalanche Current (Repetitive) (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC=25ºC PTOT Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature 50 25 TJ 150 TSTG -55 to +150 1/11 70 W ºC o C Version: G14 TSM4NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient Limit Unit IPAK/DPAK ITO-220 TO-220 2.5 5 1.78 o C/W 62.5 o C/W RӨJA 83 62.5 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2.2 2.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transfer Conductance VDS = 40V, ID = 2A gfs -- 2.6 -- S Total Gate Charge VDS = 480V, ID = 4A, Qg -- 14.5 -- Gate-Source Charge VGS = 10V Qgs -- 3.4 -- Gate-Drain Charge (Note 4,5) Qgd -- 7 -- Ciss -- 500 -- Coss -- 53.2 -- Crss -- 7 -- td(on) -- 11 -- tr -- 20 -- td(off) -- 30 -- tf -- 19 -- Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 4A, VDD = 300V, RG =25Ω (Note 4,5) ns Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS -- -- 4 A Source Current (Pulse) the MOSFET ISM -- -- 16 A Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.13 V Reverse Recovery Time VGS = 0V, IS =4A, trr -- 522 -- ns dIF/dt = 100A/µs Reverse Recovery Charge Qrr -Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=4A, L=8mH, RG =25Ω, Starting TJ=25ºC Note 3: ISD≤4A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300µs, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature 1.6 -- µC 2/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage . 5/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Breakdown Voltage vs. Temperature Threshold Voltage vs. Temperature Maximum Safe Operating Area 6/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 7/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G Y WW F = Halogen Free Product = Year Code = Week Code (01~52) = Factory Code 8/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) = Lot Code 9/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) = Lot Code 10/11 Version: G14 TSM4NB60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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