TSC TSM4NB60CIC0G

TSM4NB60
600V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
ID (A)
600
2.5 @ VGS =10V
4
General Description
TO-251
(IPAK)
The TSM4NB60 N-Channel Power MOSFET is
TO-252
(DPAK)
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize
on-state
resistance,
provide
superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
Block Diagram
Features
●
●
●
●
Low RDS(ON) 2.2Ω (Typ.)
Low gate charge typical @ 14.5nC (Typ.)
Low Crss typical @ 7.0pF (Typ.)
100% Avalanche Tested
Ordering Information
Part No.
Package
Packing
TSM4NB60CH C5G
TO-251
75pcs / Tube
TSM4NB60CP ROG
TO-252
2.5Kpcs / 13” Reel
TSM4NB60CZ C0
TO-220
50pcs / Tube
TSM4NB60CI C0G
ITO-220
Note: “G” denotes for Halogen Free
N-Channel MOSFET
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
4
A
2.4
A
Tc = 25ºC
Continuous Drain Current
Tc = 100ºC
ID
Pulsed Drain Current *
IDM
16
A
Single Pulse Avalanche Energy (Note 2)
EAS
70
mJ
Avalanche Current (Repetitive) (Note 1)
IAR
4
A
Repetitive Avalanche Energy (Note 1)
EAR
5
mJ
dv/dt
4.5
V/ns
Peak Diode Recovery dv/dt (Note 3)
o
Total Power Dissipation @ TC = 25 C
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
PTOT
TJ
TSTG
1/11
50
25
150
-55 to +150
70
W
ºC
o
C
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
Limit
Unit
IPAK/DPAK
ITO-220
TO-220
2.5
5
1.78
o
62.5
o
RӨJA
83
62.5
C/W
C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 2A
RDS(ON)
--
2.2
2.5
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.5
3.5
4.5
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 40V, ID = 2A
gfs
--
2.6
--
S
VDS = 480V, ID = 4A,
Qg
--
14.5
--
Gate-Source Charge
VGS = 10V
Qgs
--
3.4
--
Gate-Drain Charge
(Note 4,5)
Qgd
--
7
--
Ciss
--
500
--
Coss
--
53.2
--
Crss
--
7
--
td(on)
--
11
--
tr
--
20
--
td(off)
--
30
--
tf
--
19
--
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, ID = 4A,
VDD = 300V, RG =25Ω
(Note 4,5)
nS
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
--
--
4
A
Source Current (Pulse)
the MOSFET
ISM
--
--
16
A
Diode Forward Voltage
IS = 4A, VGS = 0V
VSD
--
--
1.13
V
Reverse Recovery Time
VGS = 0V, IS =4A,
tfr
--
522
--
nS
dIF/dt = 100A/us
Reverse Recovery Charge
Qfr
-Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=4A, L=8mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
1.6
--
uC
2/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
.
5/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Breakdown Voltage vs. Temperature
Threshold Voltage vs. Temperature
Maximum Safe Operating Area
6/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L = Lot Code
7/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
8/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
9/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
10/11
Version: F13
TSM4NB60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
11/11
Version: F13