TSM900N06 60V N-Channel Power MOSFET TO-251S (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 90 VGS = 4.5V 100 Qg mΩ 9.3 nC SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH C5G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252 2.5kpcs / 13” Reel TSM900N06CW RPG SOT-223 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit IPAK DPAK SOT-223 Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 11 A 7 A Continuous Drain Current TC=25ºC (Note 1) TC=100ºC (Note 2) ID IDM 44 A Single Pulse Avalanche Energy (Note 3) EAS 25 mJ Single Pulse Avalanche Current (Note 3) IAS 7 A Pulsed Drain Current Total Power Dissipation o @ TC=25 C o Derate above TC=25 C Operating Junction Temperature Storage Temperature Range PD 25 25 1.79 W 0.2 0.2 0.014 W/ºC TJ 150 TSTG -55 to +150 1/8 ºC o C Version: A14 TSM900N06 60V N-Channel Power MOSFET Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA Limit Unit IPAK DPAK SOT-223 5 5 30 o 70 o 62 62 C/W C/W Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- -- V 76 90 -- 87 100 1.2 1.8 2.5 -- -- 1 -- -- 10 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 3A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 48V, TJ = 125ºC RDS(ON) VGS(TH) IDSS mΩ V µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance VDS = 10V, ID = 3A gfs -- 4 -- S Qg -- 9.3 -- Qgs -- 2.1 -- Qgd -- 1.8 -- Ciss -- 500 -- -- 45 -- Crss -- 16 -- Rg -- 2 -- td(on) -- 2.9 -- tr -- 9.5 -- td(off) -- 18.4 -- tf -- 5.3 -- IS -- -- 11 A ISM -- -- 44 A VGS = 0V, IS = 1A VSD -- -- 1.2 V VGS = 30V, IS = 1A dIF/dt = 100A/µs trr -- 23.2 -- ns -- 14.3 -- nC Dynamic Total Gate Charge(Note 4,5) (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 48V, ID = 6A, VGS = 10V VDS = 15V, VGS = 0V, f = 1MHz VGS=0V, VDS=0V, f=1MHz Coss nC pF Ω Switching (Note 4,5) Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time VDD=30V , VGS=10V , RG=3.3, ID=-1A (Note 4,5) Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode Pulse Drain-Source Diode Diode-Source Forward Voltage (Note 4) Reverse Recovery Time (Note 4) VG=VD=0V , Force Current Reverse Recovery Charge Qrr Note: 1. Limited by maximum junction temperature. 2. Repetitive Rating : Pulsed width limited by maximum junction temperature. 3. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25,Starting TJ=25oC 4. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2% 5. Essentially independent of operating temperature. 2/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET Electrical Characteristics Curve Normalized RDSON vs. TJ Normalized On Resistance ID , Continuous Drain Current (A) Continuous Drain Current vs. Tc TJ , Junction Temperature (oC) TC , Case Temperature (oC) Gate Charge Waveform VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Normalized Vth vs. TJ o Qg , Gate Charge (nC) Normalized Transient Impedance (TO-251S) Maximum Safe Operation Area (TO-251S) Normalized Thermal Response ID , Continuous Drain Current (A) TJ , Junction Temperature ( C) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET Electrical Characteristics Curve (Tc=25oC, unless otherwise noted) Maximum Safe Operation Area (TO-252) ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (TO-252) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Maximum Safe Operation Area (SOT-223) ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Transient Impedance (SOT-223) VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET TO-251S Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET SOT-223 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/8 Version: A14 TSM900N06 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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