TSM170N06 B15

TSM170N06
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 38A, 17mΩ
FEATURES
●
●
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KEY PERFORMANCE PARAMETERS
100% avalanche tested
Suitable for 5V drive applications
Pb-free plating
RoHS compliant
Halogen-free mold compound
PARAMETER
VALUE
UNIT
VDS
60
V
RDS(on) (max)
VGS =10V
17
VGS =4.5V
20
Qg
mΩ
15
nC
APPLICATION
●
SMPS Synchronous Rectification
●
Networking DC-DC Power System
TO-251 (IPAK)
TO-251S (IPAK SL)
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
(Note 1)
ID
TC = 100°C
(Note 2)
38
24
A
IDM
152
A
Single Pulsed Avalanche Energy
(Note 3)
EAS
20
mJ
Single Pulsed Avalanche Current
(Note 3)
IAS
20
A
PDTOT
46
W
TJ, TSTG
- 55 to +150
°C
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.7
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Total Power Dissipation @ TC = 25°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000172
1
Version: B15
TSM170N06
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
1.2
1.7
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
--
--
1
--
--
10
--
15
17
--
17.5
20
Qg
--
15
--
Qgs
--
5.5
--
Qgd
--
5
--
Ciss
--
900
--
Coss
--
130
--
Crss
--
90
--
Rg
--
2.2
--
td(on)
--
8.6
--
tr
--
24.2
--
td(off)
--
32.3
--
tf
--
7.9
--
VSD
--
--
1
V
VDS = 60V, VGS = 0V
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V,
IDSS
TJ = 125°C
Drain-Source On-State Resistance
Dynamic
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 10A
RDS(ON)
µA
mΩ
(Note 5)
Total Gate Charge
VDS = 30V, ID = 10A,
Gate-Source Charge
VGS = 4.5V
Gate-Drain Charge
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
f = 1.0MHz
F = 1MHz, open drain
nC
pF
Ω
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 15V,
Turn-Off Delay Time
RG = 6Ω, ID = 1A
Turn-Off Fall Time
Source-Drain Diode
ns
(Note 4)
Diode Forward Voltage
VGS=0V, IS=10A
Reverse Recovery Time
VGS = 0V, IS = 10A
trr
--
18
--
ns
Reverse Recovery Charge
dIF/dt = 100A/µs
Qrr
--
10
--
nC
Notes:
1.
Current limited by package
2.
Pulse width limited by the maximum junction temperature
3.
L = 0.1mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5.
For DESIGN AID ONLY, not subject to production testing.
6.
Switching time is essentially independent of operating temperature.
Document Number: DS_P0000172
2
Version: B15
TSM170N06
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM170N06CP ROG
TO-252(DPAK)
2,500pcs / 13” Reel
TSM170N06CH C5G
TO-251(IPAK)
75pcs / Tube
TSM170N06CH X0G
TO-251S(IPAK SL)
75pcs / Tube
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000172
3
Version: B15
TSM170N06
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Gate Charge
Continuous Drain Current vs. TC
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
ID, Continuous Drain Current (A)
Normalized Thermal Response (RθJC)
On-Resistance vs. Junction Temperature
Square Wave Pulse Duration (s)
VDS, Drain to Source Voltage (V)
Document Number: DS_P0000172
4
Version: B15
TSM170N06
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251S (IPAK SL)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
Y =Nov Z =Dec
W =Sep X =Oct
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000172
5
Version: B15
TSM170N06
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251 (IPAK)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
V =Aug
S =May T =Jun U =Jul
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000172
6
Version: B15
TSM170N06
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000172
7
Version: B15
TSM170N06
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000172
8
Version: B15