TSM170N06 Taiwan Semiconductor N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES ● ● ● ● ● KEY PERFORMANCE PARAMETERS 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS =10V 17 VGS =4.5V 20 Qg mΩ 15 nC APPLICATION ● SMPS Synchronous Rectification ● Networking DC-DC Power System TO-251 (IPAK) TO-251S (IPAK SL) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) 38 24 A IDM 152 A Single Pulsed Avalanche Energy (Note 3) EAS 20 mJ Single Pulsed Avalanche Current (Note 3) IAS 20 A PDTOT 46 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.7 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000172 1 Version: B15 TSM170N06 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.2 1.7 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 10 -- 15 17 -- 17.5 20 Qg -- 15 -- Qgs -- 5.5 -- Qgd -- 5 -- Ciss -- 900 -- Coss -- 130 -- Crss -- 90 -- Rg -- 2.2 -- td(on) -- 8.6 -- tr -- 24.2 -- td(off) -- 32.3 -- tf -- 7.9 -- VSD -- -- 1 V VDS = 60V, VGS = 0V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V, IDSS TJ = 125°C Drain-Source On-State Resistance Dynamic VGS = 10V, ID = 20A VGS = 4.5V, ID = 10A RDS(ON) µA mΩ (Note 5) Total Gate Charge VDS = 30V, ID = 10A, Gate-Source Charge VGS = 4.5V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 15V, Turn-Off Delay Time RG = 6Ω, ID = 1A Turn-Off Fall Time Source-Drain Diode ns (Note 4) Diode Forward Voltage VGS=0V, IS=10A Reverse Recovery Time VGS = 0V, IS = 10A trr -- 18 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qrr -- 10 -- nC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS_P0000172 2 Version: B15 TSM170N06 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM170N06CP ROG TO-252(DPAK) 2,500pcs / 13” Reel TSM170N06CH C5G TO-251(IPAK) 75pcs / Tube TSM170N06CH X0G TO-251S(IPAK SL) 75pcs / Tube Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000172 3 Version: B15 TSM170N06 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Gate Charge Continuous Drain Current vs. TC Threshold Voltage vs. Junction Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance Curve ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) On-Resistance vs. Junction Temperature Square Wave Pulse Duration (s) VDS, Drain to Source Voltage (V) Document Number: DS_P0000172 4 Version: B15 TSM170N06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251S (IPAK SL) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug Y =Nov Z =Dec W =Sep X =Oct L = Lot Code (1~9, A~Z) Document Number: DS_P0000172 5 Version: B15 TSM170N06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-251 (IPAK) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000172 6 Version: B15 TSM170N06 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 (DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000172 7 Version: B15 TSM170N06 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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