TSM70N10

TSM70N10
100V N-Channel Power MOSFET
TO-252
(DPAK)
TO-251
(IPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
100
V
RDS(on)(max)
13
mΩ
Qg
145
nC
TO-251S
(IPAK SL)
Ordering Information
Block Diagram
Part No.
Package
Packing
TSM70N10CP ROG
TSM70N10CH C5G
TSM70N10CH X0G
TO-252
TO-251
TO-251S
2.5kpcs / 13” Reel
75pcs / Tube
75pcs / Tube
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
N-Channel MOSFET
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
Continuous Drain Current
(Note 3)
TC=70°C
TA=25°C
70
61
ID
TA=70°C
Drain Current-Pulsed
(Note 1)
12
A
9
IDM
150
A
Avalanche Current, L=0.5mH
IAS, IAR
25
A
Avalanche Energy, L=0.5mH
EAS, EAR
156
mJ
TC=25°C
Maximum Power Dissipation
(Note 2)
TC=70°C
TA=25°C
120
PD
TA=70°C
Storage Temperature Range
Operating Junction Temperature Range
1/8
80
8.3
W
5.3
TSTG
-55 to +150
°C
TJ
-55 to +150
°C
Version: D14
TSM70N10
100V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Limit
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
Unit
1
o
40
o
C/W
C/W
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
100
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 30A
RDS(ON)
--
10
13
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2
3
4
V
Zero Gate Voltage Drain Current
VDS = 80V, VGS = 0V
IDSS
--
--
1
µA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
145
--
Qgs
--
25
--
Qgd
--
43
--
Ciss
--
4300
--
Coss
--
300
--
Crss
--
120
--
td(on)
--
27
--
tr
--
13
--
td(off)
--
15
--
tf
--
42
--
VSD
--
0.8
1.3
V
trr
--
165
--
ns
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 50V, ID = 30A,
VGS = 10V
Input Capacitance
Output Capacitance
VDS = 30V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 50V,
Turn-Off Delay Time
RG = 3Ω
Turn-Off Fall Time
ns
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=30A
Reverse Recovery Time
IS = 30A, TJ=25 C
o
dI/dt = 100A/µs
Reverse Recovery Charge
Qrr
-175
-nC
Notes:
1.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2.
RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference
is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air
3.
The maximum current is limited by package.
2/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Gate-Source Voltage
Gate Charge
On-Resistance vs. Junction Temperature
Capacitance
3/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
Electrical Characteristics Curves
Maximum Safe Operating Area
Threshold Voltage vs. Temperature
IDS=250µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
TO-251S (IPAK SL) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
7/8
Version: D14
TSM70N10
100V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
8/8
Version: D14