Variable Capacitance Diodes MA6X344 Silicon epitaxial planar type Unit : mm + 0.2 For UHF and VHF electronic tuners 2.8 − 0.3 + 0.25 Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 34 V Forward current (DC) IF 20 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 + 0.1 + 0.1 1.45 ± 0.1 4 + 0.1 0.16 − 0.06 1.9 ± 0.1 0.95 0.95 2 0.1 to 0.3 0.4 ± 0.2 0 to 0.05 ■ Absolute Maximum Ratings Ta = 25°C 5 0.8 + 0.2 2.9 − 0.05 + 0.2 1.1 − 0.1 • Three isolated elements contained in one package • Large capacitance variation ratio • Small series resistance rD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.5− 0.05 1 6 ■ Features Parameter 0.65 ± 0.15 1.5 − 0.05 0.3 − 0.05 0.65 ± 0.15 1：Cathode 1 4：Anode 3 2：Cathode 2 5：Anode 2 3：Cathode 3 6：Anode 1 Mini Type Package (6-pin) Marking Symbol: 5P Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR Conditions Min nA VR = 3 V, f = 1 MHz 11.233 12.781 pF VR = 25 V, f = 1 MHz 2.020 2.367 pF CD(10V) VR = 10 V, f = 1 MHz 4.358 5.422 pF CD(17V) VR = 17 V, f = 1 MHz 2.567 3.100 pF 6.15 CD(3V)/CD(25V) 4.60 CD(17V)/CD(25V) 0.37 Series Unit 10 CD(3V) Capacitance difference resistance*2 Max CD(25V) Capacitance ratio Diode capacitance deviation Typ VR = 30 V ∆C CD(3V)(10V)(17V)(25V) rD CD = 9 pF, f = 470 MHz 0.55 pF Note)*1 % 0.75 Ω Note) 1．Rated input/output frequency: 470 MHz 2．2. Each characteristic is a standard for each diode. 3. *1 : Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank G. *2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA6X344 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C Forward current IF (mA) Diode capacitance CD (pF) 50 30 20 10 5 3 1.03 100 1.02 0 4 80 Ta = 60°C − 40°C 25°C 60 40 0 8 12 16 20 24 28 32 36 40 f = 1 MHz VR = 3 V 1.01 10 V 17 V 25 V 1.00 0.99 20 2 1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 100 0.98 0 0.2 Reverse voltage VR (V) 0.4 0.6 Forward voltage 0.8 1.0 0.97 1.2 VF (V) 0 20 40 60 IR T a Reverse current IR (nA) 102 VR = 30 V 10 1 10−1 10−2 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 12.345 12.718 CD(10V) (pF) CD(3V) (pF) 11.806 4.934 5.395 2 3.085 2.580 4.380 2.738 CD(17V) (pF) 2.356 Secondary rank classification CD(25V) (pF) 2.253 Primary rank classification 2.091 2.030 CD rank classification 11.290 80 Ambient temperature Ta (°C) 100