Semiconductor Laser LNC801PS High Power Output Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Overview ø1.0 min. LD 110˚±1˚ 0.4±0.1 The LNC801PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices. Reference slot Kovar glass LD pellet 2.3±0.2 1.27 0.25 1.2±0.1 Stable single horizontal mode oscillation Reference plane ø1.2max. 3-ø0.45 6.5±0.5 Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW 2 Supports direct modulation 1 3 1: LD Anode 2: Common Case 3: PD Cathode ø2.0 Near infrared oscillating wavelength 3 Reference plane 0.5 max. Features PD 1 Junction plane 1.0±0.1 Low threshold oscillation Unit : mm 2 Bottom view Long lifetime, high reliability Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PO 60 mW Laser VR 1.5 V PIN VR (PIN) 30 V Radiant power Reverse voltage Power dissipation Pd (PIN) 100 mW Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +80 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter min typ max Unit Ith CW 10 30 50 mA Operating current IOP PO = 50mW 50 Operating voltage VOP PO = 50mW Threshold current 70 120 mA 2.0 3.0 V λL PO = 50mW 815 830 845 nm θ//* PO = 50mW 7 10 13 deg. Vertical direction θ ⊥* PO = 50mW 18 25 28 deg. Differential efficiency η CW PO = 36mW/I(40mW – 4mW) 0.6 1.0 1.5 mW/mA Reverse current (DC) IR VR (PIN) = 5V PIN photo current IP PO = 50mW, VR (PIN) = 5V X direction θX PO = 50mW –2.0 +2.0 deg. Y direction θY PO = 50mW –3.0 +3.0 deg. Optical axis accuracy Oscillation mode * Conditions Horizontal direction Oscillation wavelength Radiation angle Symbol 0.1 µA mA Single horizontal mode θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC801PS PO — IOP I—V 60 Far field pattern 200 100 Ta = 25˚C Relative radiant power ∆PO 100 I (mA) 40 30 0 Current Radiant power PO (mW) 50 20 –100 10 0 0 40 80 –200 –4 120 –2 0 Ith — Ta 10 3 30 50 70 Ambient temperature Ta (˚C ) Id — Ta VR (PIN) = 30V PIN dark current Id (nA) 10 1 10 –1 10 –2 10 30 20 50 Ambient temperature Ta (˚C ) 70 0 20 40 PO — Ta 100 PO = 50mW 80 PO (mW) Radiant power 10 2 60 40 20 10 – 10 10 30 50 Ambient temperature Ta (˚C ) 10 2 10 –3 – 10 20 Angle θ (deg.) IOP (mA) Operating current Ith (mA) Threshold current 10 10 40 0 40 4 θ// IOP — Ta 10 2 1 – 10 θ⊥ 60 Voltage V (V) Operating current IOP (mA) 2 2 80 70 0 – 10 10 30 50 70 Ambient temperature Ta (˚C )