PANASONIC LNC802PS

Semiconductor Laser
LNC802PS
GaAlAs Semiconductor Laser
ø5.6 +0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
ø1.0 min.
0.4±0.1
Low threshold current
Stable single horizontal mode oscillation
110˚±1˚
Y
Features
2.3±0.2
1.27
0.25
Kovar glass
LD pellet
Reference plane
Z
6.5±0.5
Optical data processing devices
Optical disk memory
ø1.2 max.
3-ø0.45
0.5 max.
Applications
2
1
Medical equipment
3
Reference slot
1.2±0.1
High radiant power : 50mW
PD
1
Junction plane
1.0±0.1
Long lifetime, high reliability
LD
X
3
1: LD Anode
2: Common Case
3: PD Cathode
ø2.0
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Radiant power
Reverse voltage
Ratings
Unit
PO
50
mW
Laser
VR
1.5
V
PIN
VR (PIN)
30
V
Pd (PIN)
100
mW
Power dissipation
Operating ambient temperature
Topr
–10 to +60
˚C
Storage temperature
Tstg
– 40 to +80
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Conditions
min
typ
max
Unit
Threshold current
Ith
CW
10
30
50
mA
Operating current
IOP
CW PO = 40mW
45
65
100
mA
Operating voltage
VOP
CW PO = 40mW
2.0
3.0
V
λL
CW PO = 40mW
815
830
845
nm
Horizontal direction
θ//*1
CW PO = 40mW
7
10
13
deg.
Vertical direction
θ⊥*1
CW PO = 40mW
18
25
30
deg.
0.6
1.0
1.5
Oscillation wavelength
Radiation angle
Differential efficiency
η
CW PO = 36mW/I(40mW – 4mW)
PIN photo current
IP
CW PO = 40mW, VR (PIN) = 5V
Optical axis
accuracy
mA
IR
VR (PIN) = 15V
0.1
µA
X direction
θX
CW PO = 40mW
–2.0
+2.0
deg.
Y direction
θY
CW PO = 40mW
–3.0
+3.0
deg.
Reverse current (DC)
*1
Symbol
The radiation angle is indicated as half full angles.
1
Semiconductor Laser
LNC802PS
PO — IOP
I—V
60
Far field pattern
200
100
Ta = 25˚C
Relative radiant power ∆PO
100
I (mA)
40
30
0
Current
Radiant power
PO (mW)
50
20
–100
10
0
0
40
80
–200
–4
120
–2
0
2
80
60
20
20
Ith — Ta
IOP — Ta
10 2
0
20
40
Angle θ (deg.)
Voltage V (V)
Operating current IOP (mA)
θ⊥
40
0
40
4
θ//
PO — Ta
10 3
60
PO = 40mW
10
PO (mW)
Radiant power
Operating current
Threshold current
Ith (mA)
IOP (mA)
50
10 2
40
30
20
10
1
– 10
10
30
50
70
Ambient temperature Ta (˚C )
Id — Ta
VR (PIN) = 15V
PIN dark current Id (nA)
10
1
10 –1
10 –2
10
30
50
Ambient temperature Ta (˚C )
2
10
30
50
Ambient temperature Ta (˚C )
10 2
10 –3
– 10
10
– 10
70
70
0
– 10
10
30
50
70
Ambient temperature Ta (˚C )