PIN Photodiodes PNA3W01L (PN307) Silicon planar type For optical control systems Unit: mm Type number : cathode mark (Purple) ■ Features 10.0 min. • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting diodes: λp = 800 nm (typ.) • Double end type small size package 0.5±0.1 (φ1.8) Symbol Rating Reverse voltage VR 30 V Power dissipation PD 10 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 2.8±0.2 Ta = 25°C Unit R0.9 0.4±0.1 (1.8) (0.7) 2.8±0.2 2.2±0.15 (1.8) (0.15) (0.7) 45 ° 2 1.05±0.1 Parameter 3.2±0.3 1 0.85±0.15 ■ Absolute Maximum Ratings 10.0 min. 3.2±0.3 1: Cathode 2: Anode LTTLW102-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Dark current ID VR = 10 V Photocurrent *1 IL VR = 10 V, L = 1 000 lx Peak emission wavelength λp VR = 10 V 800 nm Rise time *2 tr VR = 10 V, RL = 1 kΩ 50 ns Fall time *2 50 tf Rise time *2 tr Fall time *2 tf Half-power angle θ nA µA 5 50 ns VR = 10 V, RL = 100 kΩ 5 µs 5 µs The angle from which photocurrent becomes 50% 24 ° Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) λP = 800 nm 50 Ω 90% 10% Sig. out RL (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00029BED 1 PNA3W01L PD Ta IL L 14 VR = 10 V 103 T = 25°C a T = 2 856 K 12 8 6 4 VR = 10 V 102 Dark current ID (nA) 102 10 Photocurrent IL (µA) Power dissipation PD (mW) ID T a 103 10 1 10 1 10 −1 2 0 −20 0 20 40 60 80 10 −2 100 1 Ambient temperature Ta (°C) 10 −1 −40 104 40 40 0 Ta = 25°C 80 60 40 20 0 200 80 Ambient temperature Ta (°C) 800 1 000 1 200 Ta = 25°C 10 1 10 −1 0 8 16 24 Reverse voltage VR (V) 32 10 −2 −1 10 1 10 Load resistance RL (kΩ) SHE00029BED 60 40 20 0 80 40 0 40 Half-power angle θ (°) tr , tf RL Rise time tr , Fall time tf (µs) Dark current ID (nA) 600 102 1 10 −1 400 Wavelength λ (nm) I D VR 10 80 Directivity characteristics Relative sensitivity ∆S (%) Relative sensitivity ∆S (%) Relative photocurrent ∆IL (%) 80 40 100 VR = 10 V Ta = 25°C 80 120 0 Ambient temperature Ta (°C) Spectral sensitivity characteristics 100 VR = 10 V L = 1 000 lx T = 2 856 K 0 −40 2 103 Illuminance L (lx) ∆IL Ta 160 102 10 102 80 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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