Photo IC PNC4271F (PN7611) Bipolar integrated circuit with photodetection function Unit: mm Optical pick up for CD, CD-ROM 5.3 max. 1.8±0.3 1.0±0.2 0.75±0.1 8-0.8±0.1 4.0±0.1 2 φ3 . 9.4±0.3 • Built-in I-V conversion amplifier • Support CD and 4 × CD-ROM 4.3 max. ■ Features 0.6±0.2 1.0 10 9 8 7 6 (0.6) 0.1 10-0.4 +0.1 −0.15 1 2 3 4 +0.1 5 0.2 −0.05 10-0.35±0.1 ∆x ∆y 5.0±0.1 θ chip(Center of Photo Detector) ∆x: 0.0 ± 0.2 ∆y: 0.6 ± 0.2 θ : 45° ± 2° ■ Block Diagram + + Unit: µm 9 − 8 3 E 5 A 83 kΩ C D 0 166 kΩ 12 + 30 F 5 D 30 83 kΩ ■ Dimensions of Detection Area − − 2 10 0.6 mm ± 0.2 mm from package center 1 B 45° 83 kΩ − 5 5 7 F B E 166 kΩ 0 C 12 83 kΩ + 10 − 4 A − + 6 + ■ Pin Descriptions Pin No. Description Pin No. Description 1 D-out 6 E-out 2 A-out 7 Common GND 3 Common GND 8 VC 4 B-out 9 VCC 5 C-out 10 F-out Note) The part number in the parenthesis shows conventional part number. Publication date: October 2001 SHE00047BED 1 PNC4271F ■ Absolute Maximum Ratings Ta = 25°C Parameter Supply voltage Symbol Rating Unit VCC +6 V Power dissipation PD 115 mW Operating ambient temperature Topr −20 to +80 °C Storage temperature Tstg −30 to +85 °C ■ Electro-Optical Characteristics VCC = 5 V, RL = 83 kΩ, Ta = 25°C ± 3°C Parameter Symbol Current of all circuits ICC Output voltage *1, 2, 3, 6 VO Output offset voltage *1 VOFF Output offset voltage difference Maximum output voltage *2, 5, 6 Output noise voltage *6 Frequency characteristics *2, 4, 6 Peak sensitivity wavelength *6 Response time *2 ∆VOFF VOM Conditions Min Typ 1.5 3.0 mA 240 300 360 mV P1 = 10 µW, E to F element 520 660 800 A to F element −20 0 +20 mV (A + B) − (C + D) element −20 0 +20 mV (A + D) − (B + C) element −20 0 +20 (A + C) − (B + D) element −20 0 +20 E − F element −15 0 +15 Pl = 100 µW 3.7 P1 = 10 µW, A to D element VON fC A to D element 6 8 E to F element 0.5 1.5 10% to 90% of output wave Note) *1: Based on reference supply voltage range. *2: Semiconductor laser light source (λ = 780 nm) *3: Not include the output offset voltage. *4: Frequency when starting from 100 kHz and the output voltage decreased by 3 dB. *5: Based on GND. *6: Designed specification. 2 4.1 0.2 λP tr , t f SHE00047BED Max Unit V 1.0 mV[rms] MHz 900 nm 90 ns PNC4271F PD Ta VO(offset) Ta 200 VO Ta 20 140 VCC = 5 V 150 100 50 0 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 130 Relative output voltage VO (%) Output offset voltage VO(offset) (mV) Power dissipation PD (mW) VCC = 5 V 15 10 5 0 −5 −10 −15 −20 −40 120 110 100 90 80 70 −20 0 20 40 60 Ambient temperature Ta (°C) 80 60 −40 −20 0 20 40 60 80 Ambient temperature Ta (°C) Frequency characteristics 2 A to D element VCC = 5 V Ta = 25°C Relative output voltage VO (dB) 1 0 −1 −2 −3 −4 −5 −6 105 106 107 108 Frequency f (Hz) SHE00047BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR