Photo IC diode S10604-200CT COB (chip on board) type, small package 1 mm The S10604-200CT photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Effects of infrared remote control light on sensitivity are reduced when compared to previous types. Features Applications Spectral response close to human eye sensitivity 0.8t mm Small package: 2.0 × 1.25 × About 1/5 the cubic volume of previous type (S9067-201CT) Lower output-current fluctuations compared with phototransistors Liquid crystal monitor backlight dimmer for cellular phone Energy-saving sensor for large-screen TVs, etc. Light dimmers for liquid crystal panels Various types of light level measurement Excellent linearity Low output fluctuations for light sources producing the same illuminance at different color temperatures Suitable for lead-free reflow (RoHS compliance) Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Reflow soldering condition*3 Symbol VR IL IF Condition P Topr Tstg Tsol No dew condensation*2 No dew condensation*2 Value -0.5 to +12 5 5 150 -30 to +80 -40 to +85 Peak temperature 260 °C, two times (See page 5) Unit V mA mA mW °C °C - *1: Power dissipation decreases at a rate of 2 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Dark current Photocurrent Symbol λ λp ID IL Rise time*4 tr Fall time*4 tf Condition VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm 90 to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm Min. 0.21 Typ. 300 to 820 560 1 - Max. 50 0.39 Unit nm nm nA mA - 6.0 - ms - 2.5 - ms *4: Rise/fall time measurement method (P.2) www.hamamatsu.com 1 Photo IC diode S10604-200CT Pulsed light from LED (λ=560 nm) 2.5 V 90 % VO 10 % 0.1 μF tr 7.5 V tf VO Load resistance RL KPICC0041EA Spectral response Photocurrent vs. illuminance (Typ. Ta=25 °C, VR=5 V) 1.0 Human eye sensitivity 0.9 0.8 1 mA 0.7 Photocurrent Relative sensitivity (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 0.6 0.5 S10604-200CT 0.4 100 μA 10 μA 0.3 0.2 1 μA 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) KPICB0112ED KPICB0083EC 2 Photo IC diode S10604-200CT Rise/fall times vs. load resistance Photocurrent vs. ambient temperature (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) 1000 (Typ. Ta=25 °C, VR=5 V, 2856 K, Io≈0.6 mA) 1.8 Photocurrent (relative value)* 1.6 Rise/fall times (ms) 100 tr 10 tf 1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 100 1k 10 k 100 k 1M Load resistance (Ω) 0 -25 0 25 50 75 100 Ambient temperature (°C) KPICB0115EA * At Ta=25 °C normalized to 1 KPICB0116EA Directivity (Typ. Ta=25 °C, 2856 K) 0° 10° 20° 20° 10° 30° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° 100 80 80° 60 40 20 0 20 40 60 90° 80 100 Relative sensitivity (%) KPICB0117EA 3 Photo IC diode S10604-200CT Operating circuit example Photodiode for signal detection Photodiode for signal offset Cathode Internal protection resistance (approx. 150 Ω) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Reverse bias power supply Current amp (approx. 30000 times) Anode Vout RL CL KPICC0132EA The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a lowpass filter. Cutoff frequency fc ≈ 1 2πCLRL Dimensional outline (unit: mm) 2.0 1.4 1.0 1.0 1.0 1.25 1.5 (0.25) Photosensitive area 0.32 × 0.46 Recommended land pattern 0.4 0.8 Index mark 0.4 0.4 Cathode Anode Tolerance unless otherwise noted: ±0.2 Values in parentheses indicate reference value. Electrode Standard packing: reel (3000 pcs/reel) KPICA0072EB 4 Photo IC diode S10604-200CT Packing specifications Tape (3000 pcs./reel) 2 4 ɸ13 0.23 1.75 ϕ1.5 Reel ɸ178 ɸ60 3.5 8 2.2 Cathode Anode KPICA0073EA 9 10 KPICA0074EA Recommended temperature profile of reflow soldering 300 Peak temperature 260 °C max. Temperature (°C) 250 200 150 Preheating time (150 to 200 °C) 160 s Heating time (217 °C min.) 100 s 100 50 0 0 50 100 150 200 250 300 350 400 Time (s) KPICB0119EA · After unpacking, store this device in an environment at a temperature of 5 to 25 °C and a humidity below 60%, and perform reflow soldering on this device within 168 hours (7 days). · Thermal stress applied to the device during reflow soldering differs depending on the PC boards and reflow oven being used. When setting the reflow conditions, make sure that the reflow soldering process does not degrade device reliability. 5 Photo IC diode S10604-200CT Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. [Figure 1] Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC 6 Photo IC diode S10604-200CT [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 5 1600 lx 1380 lx Internal protective resistance Rin: approx. 150 Ω Photocurrent (mA) 4 Saturation region approx. 1260 lx 1150 lx 3 880 lx Load line Vcc=5 V, RL=1 kΩ 2 Saturation region approx. 650 lx 600 lx Load line Vcc=3 V, RL=1 kΩ 300 lx 1 0 0 1 Rising voltage Vbe(ON)≈0.7 V 2 3 4 5 Reverse voltage (V) KPICB0107EC Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products / Precautions Information described in this material is current as of August, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1090E05 Aug. 2015 DN 7