Photo IC diode S11153-01MT Wide operating temperature: -40 to +105 °C The S11153-01MT photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the previous type, the S11153-01MT has a wide operating temperature range (-40 to +105 °C). Features Applications Wide operating temperature: -40 to +105 °C Automotive illuminance sensor Spectral response close to human eye sensitivity Energy-saving sensor for TVs, etc. Lower output-current variation compared with phototransistors Various types of light level measurement Excellent linearity Low output deviation by different color temperature light source Suitable for lead-free reflow (RoHS compliance) Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Reflow soldering conditions*3 Symbol VR IL IF P Topr Tstg Tsol Condition No dew condensation*2 No dew condensation*2 Value -0.5 to +12 5 5 300 -40 to +105 -40 to +125 Peak temperature 250 °C max., two times Unit V mA mA mW °C °C - *1: Power dissipation decreases at a rate of 3.0 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 4 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Dark current Photocurrent Symbol λ λp ID IL Rise time*4 tr Fall time*4 tf Condition VR=5 V VR=5 V, 2856 K, 100 lx 10 to 90%, VR=7.5 V RL=10 kΩ, λ=560 nm 90 to 10%, VR=7.5 V RL=10 kΩ, λ=560 nm Min. 325 Typ. 300 to 820 560 1.0 - Max. 50 495 Unit nm nm nA μA - 6.0 - ms - 2.5 - ms www.hamamatsu.com 1 Photo IC diode S11153-01MT *4: Rise/fall time measurement method Pulsed light from LED (λ=560 nm) 2.5 V 90 % VO 10 % 0.1 μF tr 7.5 V tf VO Load resistance RL KPICC0041EA Photocurrent vs. illuminance Spectral response (Typ. Ta=25 °C, VR=5 V) 1.0 (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 0.9 Human eye sensitivity 1 mA 0.7 Photocurrent Relative sensitivity (%) 0.8 0.6 0.5 S11153-01MT 0.4 100 μA 10 μA 0.3 1 μA 0.2 0.1 0 200 400 600 800 1000 1200 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) Wavelength (nm) KPICB0157EB KPICB0158EB 2 Photo IC diode S11153-01MT Photocurrent vs. ambient temperature Rise/fall times vs. load resistance (Typ. Ta=25 °C, VR=7.5 V, λ=560 nm, Vo=2.5 V) 100 Rise/fall times (ms) tr 10 tf 1 0.1 100 1k 10 k 100 k (Typ. Ta=25 °C, VR=5 V, 2856 K, Io=0.6 mA) 1.4 Photocurrent (relative value) * 1000 1.2 1.0 0.8 0.6 -50 1M -25 0 25 50 75 100 125 Ambient temperature (°C) Load resistance (Ω) KPICB0115EA * Normalized photocurrent 1 at Ta=25 °C KPICB0165EB Directivity (Typ. Ta=25 °C, tungsten lamp) 20° 10° 0° 10° 20° 30° 30° 50° 50° 60° 60° 70° 70° 80° X direction 90° 100 80 Y direction 40° 40° Y direction 80° 60 40 20 0 20 40 60 90° 80 100 X direction Relative sensitivity (%) KPICB0159EA 3 Photo IC diode S11153-01MT Block diagram The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Photodiode for signal detection Photodiode for signal offset Cathode Internal protection resistance (approx. 150 Ω) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Cut-off frequency fc 1 2π CL RL Reverse bias power supply Current amp (approx. 30000 times) Anode Vout RL CL KPICC0132EA Dimensional outline (unit: mm) 3.5 ± 0.2 Photosensitive area 0.32 × 0.46 2.6 0.8 2.2 2.7 3.2 0.8 0.5 1.0 Silicone resin ϕ2.4 0.8 ± 0.2 ϕ1.0 0.8 ± 0.2 2.6 0.85 1.8 ± 0.2 4.5 1.5 1.5 3.1 Recommended land pattern Cathode Anode Tolerance unless otherwise noted: ±0.1 Chip position accuracy with respect to package center X, Y ±0.2 Electrode Packing: reel (1000 pcs/reel) KPICA0087EB 4 Photo IC diode S11153-01MT Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. [Figure 1] Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 5 1100 lx Internal protection resistance Rin: Approx. 150 Ω 1000 lx Photocurrent (mA) 4 Saturation region Approx. 1260 lx 800 lx 3 600 lx 2 Load line Vcc=5 V, RL=1 kΩ Saturation region Approx. 650 lx 450 lx Load line Vcc=3 V, RL=1 kΩ 220 lx 1 0 0 Rising voltage 1 2 3 4 5 Reverse voltage (V) KPICB0160EA 5 Photo IC diode S11153-01MT Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C Temperature 250 °C max. 200 °C 190 °C 170 °C Preheat 80 to 110 s Soldering 70 s max. Time KPICB0173EA ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 72 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products Information described in this material is current as of June, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 6 Cat. No. KPIC1091E08 Jun. 2016 DN