Photo IC diodes S7183 S7184 Linear current amplification of photodiode output The S7183 and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to 1300 times. Despite a small active area, these photo ICs provide an output nearly equal to that from photodiodes with a 20 × 20 mm active area. Both S7183 and S7184 can be used the same way as a reverse-biased photodiode, and in most cases, they deliver a sufficient output voltage by just connecting a load resistor. Features Applications Clear plastic package Energy saving sensors for TV brightness controls, etc. Operation just as easy as using photodiodes Light dimmers for liquid crystal panels Large output current rivaling that of a phototransistor Various types of light level measurement Good linearity Absolute maximum ratings (Ta=25 °C) Parameter Symbol Condition Value Unit Reverse voltage -0.5 to +16 V VR Photocurrent 10 mA IL Forward current 10 mA IF Power dissipation*1 P 250 mW Operating temperature Topr No dew condensation*2 -30 to +80 °C Storage temperature Tstg No dew condensation*2 -40 to +85 °C S7183 260 °C, 3 s, at least 2.5 mm away from package surface Soldering S7184 350 °C, 3 s Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: Power dissipation decreases at a rate of 3.3 mW/°C above Ta=25 °C *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Operating reverse voltage Dark current Symbol Condition λ λp VR ID VR=5 V S7183, 100 lx VR=5 V Photocurrent IL 2856 K S7184, 1000 lx 10 to 90%,*3 VR=5 V, RL=10 kΩ Rise/fall times tr, tf λ=660 nm *3: Rise/fall time measurement method: Refer to P.2. Min. 3 0.75 1.4 Typ. 300 to 1000 650 0.5 1.0 1.8 Max. 12 10 1.25 2.2 Unit nm nm V nA - 0.6 - ms mA These products do not support lead-free soldering. For details on reflow soldering conditions for surface mount types, please contact our sales office. www.hamamatsu.com 1 Photo IC diodes S7183, S7184 Rise/fall time measurement method Pulsed light from LED (λ=660 nm) 2.5 V 90% Vout 10% tr 7.5 V 0.1 μF tf Vout Load resistance RL KPICC0041EB Spectral response Linearity (Typ. Ta=25 °C, VR=5 V) 1.0 (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 0.9 1 mA S7183 0.7 Photocurrent Relative sensitivity 0.8 0.6 0.5 0.4 100 μA S7184 10 μA 0.3 1 μA 0.2 0.1 0 200 400 600 800 1000 1200 100 nA 0.1 1 10 100 1000 Illuminance (lx) Wavelength (nm) KPICB0036EA KPICB0178EA 2 Photo IC diodes S7183, S7184 Dark current vs. ambient temperature Rise/fall times vs. load resistance (Typ. VR=5 V) 10 μA 100 (Typ. Ta=25 °C, VR=5 V, λ=660 nm, Vo=2.5 V) 1 μA 10 Rise/fall times (ms) Dark current 100 nA 10 nA 1 nA 100 pA 10 pA 1 0.1 1 pA 100 fA -25 0 25 50 75 0.01 100 100 Ambient temperature (°C) 1k 10 k 100 k 1M Load resistance (Ω) KPICB0042EA KPICB0043EA Directivity 20° 10° 0° 10° (Typ. Ta=25 °C) 20° 30° 30° 40° 40° 50° 50° 60° 60° 70° 80° 90° 100 70° S7183 80° S7184 80 60 40 20 0 20 40 60 80 90° 100 Relative sensitivity (%) KSPDB0176EA 3 Photo IC diodes S7183, S7184 Operating circuit example Drawing within dashed line shows schematic diagram of photo IC. Cathode Reverse bias power supply Anode Load resistance RL Load capacitance for low-pass filter CL KPICC0018EA The photodiode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cutoff frequency (fc) ≈ 1 2πCLRL 4 Photo IC diodes S7183, S7184 Dimensional outlines (unit: mm) S7183 4.3 ± 0.3 (Including burr) 4.15 5° 3.0 2.4 10° 0.6 1.4 0.6 ± 0.3 0.45 0.45 +0.6 15 min. 5° 10° (0.8) (1.2) R 0.9 4.6 -0.3 (Including burr) 4.43 1.43 ϕ1.7 2.54 ± 0.5 (Specified at lead root) Cathode Anode Tolerance unless otherwise noted: ±0.2, ±2° Shaded area indicates burr. Values in parentheses are not guaranteed, but for reference. Lead surface finish: Silver plating Standard packing: Polyethylene pack [anti-static type] (500 pcs/pack) KPICA0017EB 5 Photo IC diodes S7183, S7184 S7184 0.47 4.0* 1.5 ± 0.4 4.8 4.7* 2.54 0.6 1.5 ± 0.4 5.0 ± 0.2 (Including burr) Center of photosensitive area 0.6 × 0.34 4.1 ± 0.2 (Including burr) 10° 5° 0.8 1.8 7.0 ± 0.3 0.7 ± 0.3 0.7 ± 0.3 Cathode (Anode) Anode (Anode) 5° 0.1 ± 0.1 0.25 10° Pins and must be connected to on the PC board. Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X≤±0.25, Y≤±0.25, θ≤±2° Lead surface finish: Silver plating Standard packing: Stick (50 pcs/stick) KPICA0018EB 6 Photo IC diodes S7183, S7184 Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. [Figure 1] Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC 7 Photo IC diodes S7183, S7184 [Figure 2] Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 5 *1 Photocurrent (mA) 4 Internal protective resistance Rin: approx. 150 Ω Saturation region approx. 1260 lx *3 3 *4 Load line Vcc=5 V, RL=1 kΩ 2 Saturation region approx. 650 lx *2 Load line Vcc=3 V, RL=1 kΩ 1 lx *1 480 2660 *5 *2 410 2270 *6 *3 340 1880 *4 260 1440 *5 180 1000 *6 90 500 0 0 1 Rising voltage Vbe(ON)≈0.7 V 2 3 4 S7183 S7184 5 Reverse voltage (V) KPICB0195EB Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Surface mount type products Information described in this material is current as of June, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1022E06 Jun. 2015 DN 8