InGaAs PIN photodiodes G10899 series Wide spectral response range (0.5 to 1.7 μm) The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending to 0.5 μm on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899 series also features low noise and low dark current. Features Applications Wide spectral response range Spectroanalysis Low noise, low dark current Thermometer Large active area available Specifications / absolute maximum ratings Type no. G10899-003K G10899-005K G10899-01K G10899-02K G10899-03K Window material Package TO-18 Borosilicate glass TO-5 Reverse voltage VR (V) Active area (mm) φ0.3 φ0.5 φ1 φ2 φ3 Absolute maximum ratings Forward Operating current temperature If Topr (mA) (°C) Storage temperature Tstg (°C) 5 10 -40 to +85 -55 to +125 2 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Type no. G10899-003K G10899-005K G10899-01K G10899-02K G10899-03K Photo sensitivity Peak S Spectral sensitivity response wave- λ=0.65 μm λ=0.85 μm λ=1.3 μm λ=λp range length λ λp Min. Typ. Min. Typ. Min. Typ. Min. Typ. (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (A/W) (μm) (μm) 0.5 to 1.7 1.55 0.15 0.22 0.35 0.45 0.8 0.9 0.85 1 TermiDark Cut-off nal cacurrent frequency pacitance ID fc Ct VR=1 V VR=1 V VR=1 V Typ. Max. RL=50 Ω f=1 MHz (nA) (nA) (MHz) (pF) 0.3 1.5 300 10 0.5 2.5 150 20 1 5 45 70 5 25 10 300 15 75 5 600 Shunt resistance Rsh VR=10 mV D* λ=λp NEP λ=λp (MΩ) (cm・Hz1/2/W) (W/Hz1/2) 1000 300 100 25 10 5 × 1012 5 × 10-15 9 × 10-15 2 × 10-14 4 × 10-14 6 × 10-14 The G10899 series may be damaged by electrostatic discharge, etc. Be careful when using the G10899 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G10899 series Spectral response Photo sensitivity temperature characteristic (Typ. Ta=25 °C) 1.2 (Typ. Ta=25 °C) 2 Temperature coefficient (%/°C) G10899 series Photo sensitivity (A/W) 1.0 InGaAs PIN photodiode (standard type) 0.8 0.6 Si photodiode S1337-BQ 0.4 0.2 0 0.19 Si photodiode S1337-BR 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.5 1 0.5 0 -0.5 -1 0.2 1.8 0.4 0.6 0.8 1.0 1.2 1.4 KIRDB0408EA KIRDB0409EA Dark current vs. reverse voltage &'(()* *+,,-. &'(()! &'(() $ $ &'(()* $ $ $ !" #$% & '() Terminal capacitance vs. reverse voltage !" # $ 1.8 Wavelength (μm) Wavelength (μm) %$ 1.6 &'(()" *+,,-! *+,,-" *+,,- *+,,-. KIRDB0414EC KIRDB0410EC 2 InGaAs PIN photodiodes G10899 series Shunt resistance vs. ambient temperature &+ &Ω Ω '((!* '((!) Ω '((! Ω $Ω $Ω '((!" $Ω %Ω ! '((!* !" " ' # KIRDB0411EC Dimensional outlines (unit: mm) G10899-003K/-005K/-01K 5.4 ± 0.2 13 min. Photosensitive surface 3.6 ± 0.2 2.6 ± 0.2 0.1 max. 4.7 ± 0.1 Window 3.0 ± 0.1 0.45 Lead 2.54 ± 0.2 Case KIRDA0220EA 3 InGaAs PIN photodiodes G10899 series G10899-02K/-03K 9.2 ± 0.2 4.2 ± 0.2 18 min. 0.45 Lead 2.5 ± 0.2 Photosensitive surface 0.4 max. 0.15 max. 8.1 ± 0.1 Window 5.9 ± 0.1 5.1 ± 0.3 1.5 max. Case KIRDA0221EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Infrared detectors Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1106E03 Dec. 2015 DN 4