Si photodiodes S8552, S8553 Vacuum UV (VUV) monitoring photodiodes The S8552 and S8553 photodiodes have sensitivity in the vacuum UV region. They are specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Their design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products. Features Applications Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm) Vacuum UV monitor Excimer laser monitor Large photosensitive area S8552: 10 × 10 mm S8553: 18 × 18 mm Windowless package S8552: 16.5 × 15.0 mm ceramic package S8553: 25.5 × 25.5 mm ceramic package Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature* Storage temperature* Symbol VR max Topr Tstg Value 5 -20 to +60 -55 to +80 Unit V °C °C * No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Photosensitivity Dark current Terminal capacitance S ID Ct Rise time tr Condition λ=193 nm VR=10 mV VR=0 V, f=10 kHz VR=0 V, RL=1 kΩ 10 to 90% Min. 45 - S8552 Typ. 60 0.05 4.0 Max. 1.0 - Min. 45 - S8553 Typ. 60 0.1 8.0 Max. 5.0 - mA/W nA nF - 9 - - 18 - μs www.hamamatsu.com Unit 1 Si photodiodes S8552, S8553 Spectral response Variation in sensitivity due to VUV exposure [Typ. Ta=25 °C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)] (Typ. Ta=25 ˚C) 0.6 120 100 Relative sensitivity (%) Photosensitivity (A/W) 0.5 0.4 0.3 0.2 80 S8552, S8553 60 40 S1227/S1337 series (unsealed product) 20 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 0 1 × 106 5 × 106 7 1 × 10 Number of shots Wavelength (nm) KSPDB0357EA KSPDB0359EA (Typ. Ta=25 ˚C) 0.20 0.18 Photosensitivity (A/W) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 150 200 250 300 350 400 Wavelength (nm) KSPDB0358EA 2 Si photodiodes S8552, S8553 Dimensional outlines (unit: mm) S8552 S8553 16.5 ± 0.2 25.5 - 0.6 +0 Photosensitive area 18 × 18 2.15 ± 0.1 10.5 ɸ0.5 lead White ceramic 1.75 15.1 ± 0.3 5.0 12.5 ± 0.2 13.7 ± 0.3 Anode terminal mark ɸ0.45 lead 10 2.54 Photosensitive surface 1.1 0.75 0.3 Photosensitive surface +0 18.0 15.0 ± 0.15 Photosensitive area 10 × 10 25.5 - 0.6 18.0 3.4 KSPDA0144EA KSPDA0143EA 3 Si photodiodes S8552, S8553 Handling precautions The S8551, S8552 and S8553 use windowless packages with no protection on the photodiode chip. Always use the following precautions when handling these photodiodes. · Handle the photodiodes in a clean room. · Never touch the photodiode chip surface and wire bonding. · Wear dust-proof gloves and dust-proof mask. · Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. · Do not clean the photodiodes by any method other than air blow. Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1050E03 Oct. 2015 DN 4