InGaAs PIN photodiodes G12181 series Long wavelength type (cutoff wavelength: 1.85 to 1.9 μm) Features Applications Cutoff wavelength: 1.85 to 1.9 μm Optical power meters Low cost Gas analyzers Photosensitive area: φ0.3 to φ3 mm Moisture meters Low noise NIR (near infrared) photometry High sensitivity Options High reliability High-speed response Amplifier for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Structure / Absolute maximum ratings Absolute maximum ratings Photosensitive Thermister TE-cooler TE-cooler Reverse Operating Storage area power allowable allowable voltage temperature temperature Soldering Type no. Cooling dissipation current Topr voltage Tstg VR max conditions (mm) (mW) (A) (V) (V) (°C) (°C) G12181-003K φ0.3 (1)/B TO-18 G12181-005K φ0.5 NonG12181-010K -40 to +85*2 -55 to +125*2 φ1 cooled G12181-020K φ2 (2)/B TO-5 G12181-030K φ3 G12181-103K φ0.3 G12181-105K φ0.5 260 °C or One-stage G12181-110K 1.5 1.0 (3)/B TO-8 1 less, φ1 TE-cooled within 10 s G12181-120K φ2 G12181-130K φ3 0.2 -40 to +70*2 -55 to +85*2 G12181-203K φ0.3 G12181-205K φ0.5 Two-stage G12181-210K 1.0 1.2 (4)/B TO-8 φ1 TE-cooled G12181-220K φ2 G12181-230K φ3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: B=Borosilicate glass *2: No condensation Dimensional outline Package /Window material*1 The G12181 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12181 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G12181 series Electrical and optical characteristics (Typ., unless otherwise noted) Measurement Condition Type no. G12181-003K G12181-005K G12181-010K G12181-020K G12181-030K G12181-103K G12181-105K G12181-110K G12181-120K G12181-130K G12181-203K G12181-205K G12181-210K G12181-220K G12181-230K Peak Dark Photo Spectral sensisensitivity current response tivity S ID range waveElement λ=λp VR=0.5 V length λ temperature λp Min. Typ. Typ. Max. (°C) (μm) (μm) (A/W) (A/W) (nA) (nA) 1 10 3 30 25 0.9 to 1.9 10 100 50 500 100 1000 0.1 1 0.3 3 -10 0.9 to1.87 1.75 0.9 1.1 1 10 5 50 10 100 0.05 0.5 0.15 1.5 -20 0.9 to1.85 0.5 5 2.5 25 5 50 Cutoff Terminal Shunt frequency capacitance resistance Temp. Ct fc Rsh coefficient VR=0 V VR=0 V VR=10 mV of ID RL=50 Ω f=1 MHz VR=0.5 V Min. Typ. Typ. Max. Min. Typ. (MHz) (MHz) (pF) (pF) (MΩ) (MΩ) 40 90 25 50 10 50 15 35 70 150 4 20 5 10 230 500 1 5 1.2 2.5 1000 2000 0.2 1 1 1.5 2000 3000 0.1 0.5 40 140 22 50 130 650 15 50 64 150 50 250 5 16 200 500 13 65 1.07 1.2 3.5 900 2000 2.8 14 1 1.8 1800 3000 1.3 6.5 40 150 20 50 280 1400 15 53 60 150 110 550 5 17 195 500 28 150 1.2 3.7 850 2000 5.5 28 1 1.9 1700 3000 2.8 14 (Typ. VR=0 V) 1.2 Photosensitivity (A/W) 1.0 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C 0.8 0.6 0.4 0.2 0 0.8 1.0 1.2 Noize equivalent power NEP λ=λp Min. Typ. Typ. (cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2) 2 × 10-14 3 × 10-14 11 12 3 × 10 1 × 10 6 × 10-14 1.5 × 10-13 2 × 10-13 5 × 10-15 7 × 10-15 2 × 1012 5.5 × 1012 1.5 × 10-14 3.5 × 10-14 5 × 10-14 3.5 × 10-15 5 × 10-15 3 × 1012 8.5 × 1012 1 × 10-14 2.5 × 10-14 3.5 × 10-14 Max. (W/Hz1/2) 5 × 10-14 8.5 × 10-14 2 × 10-13 4 × 10-13 5 × 10-13 1.5 × 10-14 2 × 10-14 4 × 10-14 9 × 10-14 1.5 × 10-13 9 × 10-15 1.5 × 10-14 3 × 10-14 6.5 × 10-14 9 × 10-14 Photosensitivity temperature characteristics 1.4 1.6 1.8 2.0 Photosensitivity temperature coefficient (%/°C) Spectral response Detectivity D* λ=λp (Typ.) 2 1 0 -1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Wavelength (μm) Wavelength (μm) KIRDB0483EC KIRDB0208EA 2 InGaAs PIN photodiodes G12181 series Linearity (G12181-010K) (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 102 100 Relative sensitivity (%) 98 96 94 92 90 88 86 84 82 80 0 2 4 6 10 8 Incident light level (mW) KIRDB0535EA Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 °C) 1 μA (Typ.) 100 nA G12181-130K (Td=-10 °C) G12181-030K G12181-230K (Td=-20 °C) 10 nA G12181-120K (Td=-10 °C) G12181-020K Dark current Dark current 100 nA G12181-010K 10 nA G12181-005K G12181-220K (Td=-20 °C) 1 nA G12181-110K (Td=-10 °C) G12181-210K (Td=-20 °C) G12181-105K (Td=-10 °C) 1 nA G12181-205K (Td=-20 °C) 100 pA G12181-003K G12181-103K (Td=-10 °C) 100 pA 0.01 0.1 1 10 Reverse voltage (V) 10 pA 0.01 G12181-203K (Td=-20 °C) 0.1 1 10 Reverse voltage (V) KIRDB0484EA KIRDB0529EA 3 InGaAs PIN photodiodes G12181 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 GΩ G12181-003K/-103K/-203K G12181-030K/-130K/-230K 1 GΩ G12181-005K/-105K/-205K 100 MΩ Shunt resistance Terminal capacitance 1 nF G12181-020K/-120K/-220K 100 pF G12181-010K/-110K/-210K G12181-010K/-110K/-210K 10 MΩ 1 MΩ 100 kΩ G12181-020K/-120K/-220K 10 pF G12181-005K/-105K/-205K 10 kΩ G12181-030K/-130K/-230K G12181-003K/-103K/-203K 1 pF 0.001 0.01 0.1 1 1 kΩ -40 10 -20 20 0 40 60 80 100 Element temperature (°C) Reverse voltage (V) KIRDB0485EB KIRDB0486EB The operating temperature for one-stage and two-stage TE-cooled types is up to 70 °C. Thermistor temperature characteristics Cooling characteristics of TE-cooler (Typ.) Resistance (Ω) 5 10 104 103 -40 -30 -20 -10 0 10 20 30 Element temperature (°C) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) 106 20 One-stage TE-cooled type 0 -20 Two-stage TE-cooled type -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) KIRDB0116EA KIRDB0231EA 4 InGaAs PIN photodiodes G12181 series Current vs. voltage (TE-cooler) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage TE-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) (1) G12181-003K/-005K/-010K (2) G12181-020K/-030K 9.2 ± 0.2 5.4 ± 0.2 0.45 Lead 4.2 ± 0.2 0.45 Lead 18 min. 13 min. Photosensitive surface 2.5 ± 0.2 0.15 max. 3.6 ± 0.2 2.6 ± 0.2 0.1 max. Photosensitive surface Window 5.9 ± 0.1 0.4 max. 8.1 ± 0.1 4.7 ± 0.1 Window 3.0 ± 0.1 5.1 ± 0.3 2.54 ± 0.2 1.5 max. Case Case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0221EA 5 InGaAs PIN photodiodes G12181 series (3) G12181-103K/-105K/-110K/-120K/-130K (4) G12181-203K/-205K/-210K/-220K/-230K 15.3 ± 0.2 15.3 ± 0.2 14 ± 0.2 Photosensitive surface 12 min. 0.45 Lead 10 ± 0.2 12 min. A Photosensitive surface 0.45 Lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Window 10 ± 0.2 A Window 10 ± 0.2 0.2 max. 6.4 ± 0.2 0.2 max. 14 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 G12181-103K G12181-120K /-130K /-105K/-110K A 4.3 ± 0.2 G12181-203K G12181-220K /-205K/-210K /-230K 4.4 ± 0.2 KIRDA0224EA KIRDA0224EA A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0225EA Information described in this material is current as of April, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1117E02 Apr. 2013 DN 6