InGaAs PIN photodiodes G12182 series Long wavelength type (cutoff wavelength: 2.05 to 2.1 μm) Features Applications Cutoff wavelength: 2.05 to 2.1 μm Optical power meters Low cost Gas analyzers Photosensitive area: φ0.3 to φ3 mm Moisture meters Low noise NIR (near infrared) photometry High sensitivity Options High reliability High-speed response Amplifier for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Structure / Absolute maximum ratings Dimensional outline Package /Window 1 material* Photosensitive Thermister TE-cooler area Type no. Cooling power allowable dissipation current (mm) (mW) (A) G12182-003K φ0.3 (1)/B TO-18 G12182-005K φ0.5 NonG12182-010K φ1 cooled G12182-020K φ2 (2)/B TO-5 G12182-030K φ3 G12182-103K φ0.3 G12182-105K φ0.5 One-stage G12182-110K 1.5 (3)/B TO-8 φ1 TE-cooled G12182-120K φ2 G12182-130K φ3 0.2 G12182-203K φ0.3 G12182-205K φ0.5 Two-stage G12182-210K 1.0 (4)/B TO-8 φ1 TE-cooled G12182-220K φ2 G12182-230K φ3 Note: Exceeding the absolute maximum ratings even momentarily may cause product within the absolute maximum ratings. *1: B=Borosilicate glass *2: No condensation Absolute maximum ratings TE-cooler Reverse Operating Storage allowable voltage temperature temperature Soldering Topr voltage Tstg VR max conditions (V) (V) (°C) (°C) -40 to +85*2 -55 to +125*2 - 1.0 260 °C or less, within 10 s 1 -40 to +70*2 -55 to +85*2 1.2 a drop in product quality. Always be sure to use the The G12182 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12182 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G12182 series Electrical and optical characteristics (Typ., unless otherwise noted) Measurement Condition Type no. G12182-003K G12182-005K G12182-010K G12182-020K G12182-030K G12182-103K G12182-105K G12182-110K G12182-120K G12182-130K G12182-203K G12182-205K G12182-210K G12182-220K G12182-230K Cutoff Terminal Peak Shunt Dark Photo Detectivity frequency capacitance Spectral sensiresistance sensitivity current Temp. Ct D* fc response tivity S Rsh ID coefficient λ=λp VR=0 V range waveVR=0 V Element λ=λp VR=0.5 V of ID VR=10 mV RL=50 Ω f=1 MHz length λ temperature VR=0.5 V λp Min. Typ. Typ. Max. Min. Typ. Typ. Max. Min. Typ. Min. Typ. (°C) (μm) (μm) (A/W) (A/W) (nA) (nA) (MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) 10 100 40 90 25 50 0.65 3 20 200 15 35 70 150 0.2 1 25 0.9 to 2.1 100 1000 5 10 230 500 0.05 0.25 1 × 1011 3.5 × 1011 500 5000 1.2 2.5 1000 2000 0.01 0.05 1000 10000 1 1.5 2000 3000 0.004 0.02 1 10 40 140 22 50 10 50 3 30 15 50 64 150 2.8 14 -10 0.9 to 2.07 1.95 1 1.2 10 100 1.07 5 16 200 500 0.6 3 5 × 1011 1.5 × 1012 50 500 1.2 3.5 900 2000 0.13 0.65 100 1000 1 1.8 1800 3000 0.055 0.28 0.5 5 40 150 20 50 20 100 1.5 15 15 53 60 150 5.5 28 -20 0.9 to 2.05 5 50 5 17 195 500 1.4 7 7 × 1011 2 × 1012 25 250 1.2 3.7 850 2000 0.28 1.4 50 500 1 1.9 1700 3000 0.11 0.55 Spectral response Photosensitivity (A/W) Td=25 ˚C Td=-10 ˚C Td=-20 ˚C 0.8 0.6 0.4 0.2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Wavelength (μm) Photosensitivity temperature coefficient (%/°C) (Typ. VR=0 V) 1.0 0 0.8 Typ. (W/Hz1/2) 6.5 × 10-14 1.5 × 10-13 2.5 × 10-13 5.5 × 10-13 8.5 × 10-13 1.5 × 10-14 3 × 10-14 5.5 × 10-14 1.5 × 10-13 2 × 10-13 1 × 10-14 2 × 10-14 4 × 10-14 9 × 10-14 1.5 × 10-13 Max. (W/Hz1/2) 2 × 10-13 3.5 × 10-13 6.5 × 10-13 1.5 × 10-12 2.5 × 10-12 4.5 × 10-14 8 × 10-14 1.5 × 10-13 4 × 10-13 5.5 × 10-13 3 × 10-14 5.5 × 10-14 1 × 10-13 2.5 × 10-13 4 × 10-13 Photosensitivity temperature characteristics 1.4 1.2 Noize equivalent power NEP λ=λp (Typ.) 2 1 0 -1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Wavelength (μm) KIRDB0487EC KIRDB0207EA 2 InGaAs PIN photodiodes G12182 series Linearity (G12182-010K) (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 102 100 Relative sensitivity (%) 98 96 94 92 90 88 86 84 82 80 0 2 4 6 8 10 Incident light level (mW) KIRDB0537EA Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 °C) 10 μA (Typ.) 1 μA G12182-130K (Td=-10 °C) G12182-230K (Td=-20 °C) G12182-030K G12182-020K 100 nA G12182-010K Dark current Dark current 1 μA 100 nA G12182-005K G12182-120K (Td=-10 °C) G12182-220K (Td=-20 °C) 10 nA G12182-110K (Td=-10 °C) G12182-210K (Td=-20 °C) G12182-105K (Td=-10 °C) 10 nA 1 nA G12182-205K (Td=-20 °C) G12182-003K G12182-103K (Td=-10 °C) G12182-203K (Td=-20 °C) 1 nA 0.01 0.1 1 10 100 pA 0.01 0.1 1 10 Reverse voltageġ(V) Reverse voltage (V) KIRDB0488EA KIRDB0530EA 3 InGaAs PIN photodiodes G12182 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF (Typ. VR=10 mV) 1 GΩ G12182-003K/-103K/-203K 100 MΩ 1 nF G12182-005K/-105K/-205K G12182-010K/-110K/-210K 10 MΩ Shunt resistance Terminal capacitance G12182-030K/-130K/-230K G12182-020K/-120K/-220K 100 pF G12182-010K/-110K/-210K 1 MΩ 100 kΩ 10 kΩ 10 pF G12182-005K/-105K/-205K G12182-020K/-120K/-220K 1 kΩ G12182-003K/-103K/-203K 1 pF 0.001 0.01 0.1 1 100 Ω -40 10 G12182-030K/-130K/-230K -20 Reverse voltageġĩŗĪ 0 20 40 60 80 100 Element temperature (°C) KIRDB0490EB KIRDB0489EB The operating temperature for one-stage and two-stage TE-cooled types is up to 70 °C. Thermistor temperature characteristics (Typ.) 6 105 104 3 10 -40 -30 -20 -10 0 10 20 30 Element temperature (°C) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) 10 Resistance (Ω) Cooling characteristics of TE-cooler 20 One-stage TE-cooled type 0 -20 Two-stage TE-cooled type -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) KIRDB0116EA KIRDB0231EA 4 InGaAs PIN photodiodes G12182 series Current vs. voltage (TE-cooler) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage TE-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) 0.45 Lead Window 5.9 ± 0.1 Photosensitive surface 13 min. Photosensitive surface 3.6 ± 0.2 Window 3.0 ± 0.1 0.45 Lead 4.2 ± 0.2 8.1 ± 0.1 18 min. 4.7 ± 0.1 2.5 ± 0.2 9.2 ± 0.2 0.15 max. 5.4 ± 0.2 0.4 max. G12182-020K/-030K 2.6 ± 0.2 0.1 max. G12182-003K/-005K/-010K 5.1 ± 0.3 2.54 ± 0.2 1.5 max. Case Case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0221EA 5 InGaAs PIN photodiodes G12182 series (3) G12182-103K/-105K/-110K/-120K/-130K (4) G12182-203K/-205K/-210K/-220K/-230K 0.2 max. 6.4 ± 0.2 14 ± 0.2 Window 10 ± 0.2 A A 0.2 max. 14 ± 0.2 Window 10 ± 0.2 12 min. 0.45 Lead Photosensitive surface 12 min. Photosensitive surface 10 ± 0.2 15.3 ± 0.2 15.3 ± 0.2 0.45 Lead 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 G12182-103K G12182-120K /-105K/-110K /-130K A 4.3 ± 0.2 G12182-203K G12182-220K /-205K/-210K /-230K 4.4 ± 0.2 KIRDA0226EA A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0227EA Information described in this material is current as of April, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1118E02 Apr. 2013 DN 6