k11908-010k kird1116e

Two-color detector
K11908-010K
Two InGaAs PIN PD with different spectral response are
arranged one above the other to cover a broad wavelength range
The K11908-010K incorporates an InGaAs PIN photodiode (cutoff wavelength: λc=1.7 μm) mounted over a long wavelength
type InGaAs PIN photodiode (λc=2.55 μm), along the same optical axis. The spectral response covered from 0.9 μm to 2.55
μm as wide range and delivers low noise.
Features
Applications
InGaAs (λc=1.7 μm) mounted over InGaAs
(λc=2.55 μm) along the same optical axis
Radiation thermometer
Wide spectral response range: 0.9 to 2.55 μm
Low noise, low dark current
Spectroscopy
Optical measurement equipment
Structure
Parameter
Window material
Package
Symbol
-
Photosensitive area
-
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
Specification
Borosilicate glass
4-pin TO-5
2.4 × 2.4
φ1.0
Unit
mm
Absolute maximum ratings
Parameter
Symbol
Condition
InGaAs (λc=1.7 μm), Ta=25 °C
InGaAs (λc=2.55 μm), Ta=25 °C
Value
Unit
2
Reverse voltage
V
VR max
1
Operating temperature
Topr
-40 to +70
°C
Storage temperature
Tstg
-55 to +85
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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1
Tow-color detector
K11908-010K
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Symbol
λ
λp
Photosensitivity
S
Dark current
ID
Cutoff frequency
fc
Terminal capacitance
Ct
Shunt resistance
Rsh
Detectivity
D*
Condition
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm)
InGaAs (λc=2.55 μm)
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
InGaAs (λc=1.7 μm), VR=1 V
InGaAs (λc=2.55 μm), VR=0.5 V
InGaAs (λc=1.7 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=2.55 μm), -3 dB
VR=0 V, RL=50 Ω
InGaAs (λc=1.7 μm), VR=0 V
f=1 MHz
InGaAs (λc=2.55 μm), VR=0 V
f=1 MHz
InGaAs (λc=1.7 μm), VR=10 mV
InGaAs (λc=2.55 μm), VR=10 mV
InGaAs (λc=1.7 μm), λ=λp
InGaAs (λc=2.55 μm), λ=λp
Max.
40
30
1
2
-
2
6
-
-
1.5
2.5
-
0.5
1
1
2.8
1 × 1012
2 × 1010
10
14
5 × 1012
7 × 1010
-
Unit
μm
μm
A/W
nA
μA
nF
MΩ
kΩ
cmăHz1/2/W
Sensitivity temperature characteristic
(Typ. Ta=25 °C)
1.0
0.8
InGaAs (λc=2.55 µm)
0.6
InGaAs (λc=1.7 µm)
0.2
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
(Typ. VR=0 V, Ta=15 to 65 °C)
2.0
Sensitivity temperature coefficient (%/°C)
1.2
Photosensitivity (A/W)
Typ.
0.9 to 1.7
1.7 to 2.55
1.55
2.1
0.95
1.0
5
3
MHz
Spectral response
0.4
Min.
0.85
0.7
-
1.5
InGaAs (λc=1.7 µm)
1.0
0.5
0
-0.5
InGaAs (λc=2.55 µm)
-1.0
-1.5
-2.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Wavelength (µm)
KIRDB0479EA
KIRDB0495EA
2
Tow-color detector
K11908-010K
Dark current vs. reverse voltage
Linearity
(Typ. Ta=25 °C, λ=1.3 µm, RL=2 Ω, VR=0 V)
102
InGaAs (λc=1.7 µm)
100 µA
100
10 µA
InGaAs (λc=2.55 µm)
98
Dark current
Relative sensitivity (%)
(Typ. Ta=25 °C)
1 mA
96
94
1 µA
100 nA
InGaAs (λc=1.7 µm)
10 nA
92
90
1 nA
InGaAs (λc=2.55 µm)
0
2
6
4
8
10
12
100 pA
0.01
16
14
0.1
Incident light level (mW)
1
10
Reverse voltage (V)
KIRDB0496EA
KIRDB0480EA
Terminal capacitance vs. reverse voltage
Shunt resistance vs. element temperature
(Typ. Ta=25 °C, f=1 MHz)
10 nF
(Typ. VR=10 mV)
10 GΩ
1 GΩ
InGaAs (λc=1.7 µm)
100 MΩ
1 nF
Shunt resistance
Terminal capacitance
InGaAs (λc=1.7 µm)
100 pF
10 MΩ
1 MΩ
100 kΩ
10 kΩ
InGaAs (λc=2.55 µm)
1 kΩ
InGaAs (λc=2.55 µm)
100 Ω
10 pF
0.001
0.01
0.1
1
10
10 Ω
-40
-20
0
20
40
60
80
Element temperature (°C)
Reverse voltage (V)
KIRDB0481EA
KIRDB0482EA
3
Tow-color detector
K11908-010K
Dimensional outline (unit: mm)
Window
6.3 ± 0.1
8.3 ± 0.2
0.43
lead
30 min.
InGaAs (λc=2.55 µm)
4.3 ± 0.3
3.1 ± 0.3
6.5 ± 0.3
InGaAs (λc=1.7 µm)
0.3 max.
9.1 ± 0.3
5.1 ± 0.2
InGaAs
InGaAs
InGaAs
InGaAs
(λc=1.7 µm) cathode
(λc=1.7 µm) anode
(λc=2.55 µm) cathode
(λc=2.55 µm) anode
KIRDA0218EA
Information described in this material is current as of May, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1116E01 May 2012 DN
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