s12426 series kapd1047e

Si APD
S12426 series
Low bias operation, high-speed Si APD
for 900 nm
The S12426 series Si APDs are designed to provide a peak sensitivity wavelength in the 900 nm band where optical
rangefinders are increasingly used. The S12426 series deliver faster response and lower bias operation than our existing Si APD
(S9251 series).
Features
Applications
Peak sensitivity wavelength: 840 nm (gain=100)
Optical rangefinders
Low bias operation: Breakdown voltage=200 V max.
High-speed response: Cutoff frequency=650 MHz typ.
(S12426-02, λ=900 nm, M=100)
Structure
Parameter
Photosensitive area size*1
Effective photosensitive area
Package
Window material
Symbol
A
-
S12426-02
ϕ0.2
0.03
S12426-05
ϕ0.5
0.19
TO-18
Borosilicate glass
Unit
mm
mm2
-
Value
-20 to +85
-55 to +125
0.2
10
260 °C or less, within 10 s
Unit
°C
°C
mA
mA
-
*1: Photosensitive area in which a typical gain can be obtained
Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Reverse current (DC)
Forward current
Soldering conditions
Symbol
Topr
Tstg
Irmax
Ifmax
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Si APD
S12426 series
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Quantum efficiency
Breakdown voltage
Temp. coefficient of VBR
Dark current
Temp. coefficient of ID
λ
λp
S
QE
VBR
ΔTVBR
ID
ΔTID
Cutoff frequency
fc
Rise time
tr
Terminal capacitance
Excess noise figure
Gain
Ct
x
M
Condition
M=100
λ=900 nm, M=1
λ=900 nm, M=1
ID=100 μA
M=100
λ=900 nm, M=100
M=100, RL=50 Ω
λ=900 nm, -3 dB
M=100, RL=50 Ω
λ=900 nm, 10% to 90%
M=100, f=1 MHz
M=100, λ=900 nm
λ=900 nm
S12426-02
Typ.
Max.
400 to 1150
840
0.52
70
120
160
200
1.1
0.1
1
1.1
-
Min.
Unit
nm
nm
A/W
%
V
V/°C
nA
times/°C
-
650
-
-
600
-
MHz
-
0.55
-
-
0.6
-
ns
-
0.5
0.3
100
-
-
1.1
0.3
100
-
pF
-
Spectral response
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C, M=100 at 900 nm)
60
S12426-05
Typ.
Max.
400 to 1150
840
0.52
70
120
160
200
1.1
0.2
2
1.1
-
Min.
(Typ. Ta=25 °C)
100
90
80
Quantum efficiency (%)
Photosensitivity (A/W)
50
40
30
20
70
60
50
40
30
20
10
10
0
400
600
800
1000
1200
Wavelength (nm)
0
400
600
800
1000
1200
Wavelength (nm)
KAPDB0269EA
KAPDB0277EA
2
Si APD
S12426 series
Dark current vs. reverse voltage
Tarminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
100 μA
(Typ. Ta=25 °C)
100 pF
10 μA
Tarminal capacitance
Dark current
1 μA
100 nA
10 nA
1 nA
S12426-05
100 pA
10 pA
10 pF
S12426-05
1 pF
S12426-02
S12426-02
1 pA
100 fF
0
20
40
60
80 100 120 140 160 180 200
Reverse voltage (V)
0
20
40
60
80 100 120 140 160 180 200
Reverse voltage (V)
KAPDB0270EA
KAPDB0272EA
Gain vs. reverse voltage
(Typ. λ=900 nm)
10000
0 ˚C
Gain
1000
20 ˚C
40 ˚C
60 ˚C
80 ˚C
-10 ˚C
100
10
1
100
120
140
160
180
200
220
240
Reverse voltage (V)
KAPDB0271EA
3
Si APD
S12426 series
Directivity
(Typ. light source: tungsten lamp)
20°
10°
0°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
90°
100
80°
80
60
40
20
0
20
40
60
80
90°
100
Relative sensitivity (%)
KAPDB0292EA
ϕ4.7 ± 0.1
X
ϕ0.45
Lead
(13.5)
Photosensitive
surface
2.8
3.7 ± 0.2
Photosensitive area
A
ϕ5.4 ± 0.2
Y
Window
ϕ2.0
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2)
ϕ2.54 ± 0.2
Distance from photosensitive
area center to cap center
-0.2≤X≤+0.2
-0.2≤Y≤+0.2
Case
Type no.
S12426-02
S12426-05
A
ϕ0.2
ϕ0.5
KAPDA0148EA
4
Si APD
S12426 series
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Metal, ceramic, plastic package products
Technical information
∙ Si APD
Information described in this material is current as of September, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KAPD1047E01 Sep. 2014 DN
5